High Speed Low-Side MOS.ET Driver SOT-23 PRELIMINARY .eatures
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SC1301A/B cost effective single-channel highspeed MOS.ET driver. driver capable driving 1000p. load 20ns rise/fall time 60ns propagation delay time from input transition gate power MOS.ET. high current driving capability peak) allows fast switching 1MHz. SC1301A noninverting SC1301B inverting. Undervoltage lockout circuit included guarantee that driver output when less than equal 4.1V (typ) supply ramp internal temperature sensor shuts down driver event overtemperature. 5-pin SOT-23 package uses minimum space.
High Speed Low-Side MOS.ET Driver SOT-23
PRELIMINARY .eatures
+4.5V +16.5V operation .ast rise fall times 20ns typical with 1000pf
load peak drive current 60ns propagation delay 5-pin SOT-23 package Enable/disable control TTL-compatible input Inverting noninverting versions Undervoltage lockout supply current -40°C 85°C ambient temperature operating range Over temperature protection protection
SC1301A/B
Applications
Switch-mode power supplies Battery powered applications Solenoid motor drives
Typical Application Circuit
+12V load
10uF
0.1uF 1301A
Input
Revision January 2002
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SC1301A/B
POWER MANAGEMENT Absolute Maximum Ratings
Parameter Supply Voltage Operating Supply Voltage Input Voltage Output Voltage Enable Voltage Continuous Power Dissipation Thermal Resistance Junction Ambient Operating Temperature Range Storage Temperature Range Lead Temperature (Soldering)10 TSTG TLEAD Symbol VOUT 16.5 Internally limited +150
PRELIMINARY
Exceeding specifications below result permanent damage device, device malfunction. Operation outside parameters specified Electrical Characteristics section implied.
Units °C/W
Electrical Characteristics
Unless otherwise specified: 25°C, 12V,
Parameter Supply Current Quiescent Current Under-Voltage Lockout Threshold Voltage Enable Enable Voltage Disable Voltage Delay Output Delay Output Enable Input Current Input High Level Input Voltage Level Input Voltage Input Current tD_EN tD_DIS from high from high VSTART SC1301A Symbol Conditions Units
2002 Semtech Corp.
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SC1301A/B
POWER MANAGEMENT Electrical Characteristics (Cont.)
Unless otherwise specified: 25°C, 12V,
PRELIMINARY
Parameter Output Output Peak Current
Symbol
Conditions
Units
IPK_SOURCE IPK_SINK
VOUT 0.5V, 10uS VOUT 0.5V, 10uS
1600 1600
Thermal Shutdow Over Temperature Trip Point TJ_OT
Electrical Characteristics
Unless otherwise specified: 25°C, 12V, 1000pF
Parameter Rise time Fall time Propagation delay time Propagation delay time
Symbol
Conditions Timing Diagram Timing Diagram Timing Diagram Timing Diagram
Units
Timing Diagrams
Input
Non-inverted Output SC1301A Inverted Output SC1301B
2002 Semtech Corp.
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SC1301A/B
POWER MANAGEMENT Configuration
View
PRELIMINARY Ordering Information
Part Number SC1301AISKTR SC1301BISKTR ackag SOT-23-5 SOT-23-5 Temp. Range (TJ) -40°C +125°C -40°C +125°C
Note: Only available tape reel packaging. reel contains 3000 devices.
(SOT-23-5L)
Descriptions
Name Function TTL-compatible input signal driver. When left open, OUTPUT low. Ground. Supply: +4.5V +16.5V supply. During UVLO, OUTPUT held low. Output gate drive switching MOSFET. Enable/disable control. When driven low, OUTPUT low. When left open, OUTPUT low.
Block Diagrams
Input
Input
Input
DRIVER BIAS BIAS
Input
DRIVER BIAS BIAS
BANDGAP
BANDGAP
1301A
1301B
2002 Semtech Corp.
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SC1301A/B
POWER MANAGEMENT Applications Information
SC1301A/B high speed, high peak current MOS.ET driver. designed drive power MOS.ETs with ultra-low rise/fall time propagation delays. switching frequency controllers increased reduce power converters volume cost, fast rise fall times necessary minimize switching losses. While discrete solutions achieve reasonable drive capability, implementing delay other housekeeping functions necessary safe operation become cumbersome costly. SC1031A/B presents total solution high-speed, high power density applications. wide input supply range 4.5V 16.5V allows operation battery powered applications well distributed power systems. Supply Bypass Layout 4.7µ. 10µ. tantalum bypass capacitor with (equivalent series resistance) additional 0.1µ. ceramic capacitor parallel recommended control switching supply transients. (equivalent series resistance) metalized film capacitors also used. with high speed, high current circuit, proper layout critical achieving optimum performance SC1301A/B. Attention should paid proper placement driver, switching MOS.ET bypass capacitors. driver should placed close possible eliminate possibility oscillation caused trace inductance MOS.ET gate capacitance. resistor range could used series with gate drive damp ringing drive output path short enough. bypass capacitors should also placed closely between driver. Drive Capability Power Dissipation SC1301A/B able deliver peak current typically driving capacitive load, such MOS.ET. This high peak current will charge input capacitance device turn quickly. similar amount current needed discharge capacitance ground turn device off. Using SC1301A/B fast switching actions, such turning turning capacitive load will significantly reduce device switching loss high frequency applications. Accordingly, thermal stress reliability device improved.
PRELIMINARY
non-linear characteristics input capacitance device, test load SC1301A/B capacitor. Thus, power from bias power supply calculated based this setup. energy, which required charge capacitor turning process, calculated
where, load capacitance voltage applied driver. During turning process, same amount energy will dissipated resistive elements gate drive. Therefore, energy switching action (one turning turning off) will follows:
total
power dissipation gate driving switching calulated
Pgate
where, switching frequency given application. Below example calculate power dissipation given application. With 12V, 200kHz, power loss gate switching actions will
Pgate (200kHz (1nF 29mW
power supply current will
Pgate 29mW 2.4mA
2002 Semtech Corp.
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SC1301A/B
POWER MANAGEMENT Applications Information (Cont.)
Thermal Information lifetime performance driver basically determined drive power requirements load, thermal characteristics driver package cooling method. drivers junction temperature must kept within rated limit times. application system effectively remove heat generated driver order proper functions performance. junction temperature reaches 150oC, internal protection circuit will triggered shut down gate driver. shown power derating table, SC1301A/B power limit 385mW when ambient temperature less than ambient temperature reaches 85oC, allowed maximum power dissipation driver will 154mW. When ambient temperature somewhere between power dissipation driver should derated according table. each degree increasing ambient temperature, 3.85mW decreasing should applied driver power dissipation. Possible cooling methods include using pads, natural air-cooling careful layout forced air-cooling necessary.
Derating Table 25°C 385mW Derating Factor 3.85mW/°C 85°C 154mW
PRELIMINARY
2002 Semtech Corp.
www.semtech.com
SC1301A/B
POWER MANAGEMENT Outline Drawing SOT-23-5 PRELIMINARY
Land Pattern SOT-23-5
Contact Information
Semtech Corporation Power Management Products Division .lynn Road, Camarillo, 93012 Phone: (805)498-2111 (805)498-3804
2002 Semtech Corp.
www.semtech.com
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