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VOLTAGE CMOS QUAD 2-INPUT NAND GATE WITH TOLERANT INPUTS TOLERANT
Top Searches for this datasheet74LCX00 VOLTAGE CMOS QUAD 2-INPUT NAND GATE WITH TOLERANT INPUTS TOLERANT INPUTS HIGH SPEED: (MAX.) POWER-DOWN PROTECTION INPUTS OUTPUTS SYMMETRICAL OUTPUT IMPEDANCE: |IOH| (MIN) LEVELS GUARANTEED 24mA BALANCED PROPAGATION DELAYS: tPLH tPHL OPERATING VOLTAGE RANGE: (OPR) 2.0V 3.6V (1.5V Data Retention) FUNCTION COMPATIBLE WITH SERIES LATCH-UP PERFORMANCE EXCEEDS 500mA PERFORMANCE: >2000V; 200V (Micro Package) (TSSOP Package) ORDER CODES 74LCX00M 74LCX00T technology. ideal power high speed 3.3V applications; interfaced signal environment inputs. same speed performance 3.3V than AC/ACT family, combined with lower power consumption. inputs outputs equipped with protection circuits against static discharge, giving them immunity transient excess voltage. DESCRIPTION LCX00 voltage CMOS QUAD 2-INPUT NAND GATE fabricated with sub-micron silicon gate double-layer metal wiring C2MOS CONNECTION LOGIC SYMBOLS February 1999 74LCX00 INPUT OUTPUT EQUIVALENT CIRCUIT DESCRIPTION SYMBOL NAME FUNCT Data Inputs Data Inputs Data Outputs Ground (0V) Positive Supply Voltage TRUTH TABLE ABSOLUTE MAXIMUM RATINGS Symbol IGND Tstg Supply Voltage Input Voltage Output Voltage (VCC=0V) Output Voltage (High State) (note1) Input Diode Current Output Diode Current (note2) Output Source/Sink Current Supply Current Supply Ground Current Supply Storage Temperature Lead Temperature sec) Parameter Value -0.5 -0.5 -0.5 -0.5 +150 Unit Absolute Maximum Ratings those values beyond which damage device occur. Functional operation under these condition implied. absolute maximum rating must observed GND, 74LCX00 RECOMMENDED OPERATING CONDITIONS Symbol IOH, IOH, dt/dv Input Voltage Output Voltage CC=0V) Output Voltage (High State) High Level Output Current (VCC 3.6V) High Level Output Current (VCC 3.0V) Operating Temperature: Input Transition Rise Fall Rate 3.0V) (note Parameter Supply Voltage (note Value Unit ns/V Truth Table guaranteed: 1.5V to3.6V from0.8V 2.0V SPECIFICATIONS Symb Parameter High Level Input Voltage Level Input Voltage High Level Output Voltage Level Output Voltage Ioff Input Leakage Current Power Leakage Current Quiescent Supply Current Test nditi Value Min. IO=-100 -0.2 IO=-12 IO=-18 IO=-24 IO=100 IO=12 IO=16 IO=24 5.5V 5.5V incr. input -0.6V 0.55 Max. DYNAMIC SWITCHING CHARACTERISTICS Symb Parameter VOLP VOLV Dynamic Voltage Quiet Output (note 3.3V Test dition Value -0.8 Max. Number ofoutputs defined "n". Measured with"n-1" outputs switching from HIGH HIGH. remaining output measured state. 74LCX00 ELECTRICAL CHARACTERISTICS Input Symb Parameter tPLH tPHL tOSLH tOSHL Propagation Delay Time Output Output Skew Time (note Test dition Waveform Value Min. Max. Skew defined absolute value difference between actual propagation delay twooutputs same device switching same direction, either HIGH (tOSLH |tPLHm tPLHn|, tOSHL |tPHLm tpHLn|) Parameter guaranteed design CAPACITIVE CHARACTERISTICS Symb Parameter Input Capacitance Power Dissipation Capacitance (note 10MHz Test nditi Min. Valu Max. isdefined value IC'sinternal equivalent capacitance which calculated fromthe operating current consumption without load. Average operting current obtained following equation. CC(opr) ICC/4 (per gate) 74LCX00 TEST CIRCUIT equivalent (includes jigand probe capacitance) equivalent ZOUT pulse generator (typically WAVEFORM: PROPAGATION DELAYS (f=1MHz; duty cycle) 74LCX00 SO-14 MECHANICAL DATA DIM. MIN. 8.55 1.27 7.62 1.27 0.68 (max.) 0.149 0.181 0.019 8.75 0.35 0.19 (typ.) 0.336 0.228 0.050 0.300 0.157 0.208 0.050 0.026 0.344 0.244 TYP. MAX. 1.75 1.65 0.46 0.25 0.013 0.007 0.019 0.003 MIN. inch TYP. MAX. 0.068 0.007 0.064 0.018 0.010 P013G 74LCX00 TSSOP14 MECHANICAL DATA MIN. 0.50 0.05 0.85 0.19 0.09 6.25 0.65 0.60 0.70 0.020 0.10 TYP. MAX. 0.15 0.95 0.30 0.20 4.48 0.002 0.335 0.0075 0.0035 0.193 0.246 0.169 0.197 0.252 0.173 0.0256 0.024 0.028 0.004 0.354 MIN. inch TYP. MAX. 0.433 0.006 0.374 0.0118 0.0079 0.201 0.256 0.176 DIM. IDENTIFICATION 74LCX00 Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specification mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. 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