4500 2400 Fast Recovery Diode 5SDF 07H4501 Doc. 5SYA 11
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4500 2400
Fast Recovery Diode
5SDF 07H4501
Doc. 5SYA 1111-02 Aug. 2000
Patented free-floating silicon technology switching losses Optimized large-area snubber diode converters Industry standard press-pack ceramic housing, hermetically plasma-welded Cosmic radiation withstand rating
Blocking
VRRM IRRM VDClink Repetitive peak reverse voltage Repetitive peak reverse current Permanent voltage failure rate 4500 2400 2800 Half sine wave, VRRM, 125°C 100% Duty Duty Ambient cosmic radiation level open air.
Mechanical data
(see Fig. min. max. m/s2 m/s2 0.83
Mounting force Acceleration: Device unclamped Device clamped
Weight Surface creepage distance strike distance
Semiconductors reserves right change specifications without notice.
5SDF 07H4501
On-state (see Fig.
IFAVM IFRMS IFSM I2dt Max. average on-state current Max. on-state current Max. peak non-repetitive surge current Max. surge current integral 1400 1.28106 0.8106 Forward voltage drop Threshold voltage Slope resistance
Half sine wave, 85°C
3000
Before surge: 125°C After surge:
Approximation 500.5000
125°C
Turn-on (see Fig.
Peak forward recovery voltage di/dt A/µs, 125°C
Turn-off
Reverse recovery current Reverse recovery charge Turn-off energy 1700
Thermal (see Fig.
Tstg RthJC Operating junction temperature range Storage temperature range Thermal resistance junction case -40.125°C -40.125°C RthCH Thermal resistance case heatsink K/kW K/kW K/kW K/kW K/kW Anode side cooled Cathode side cooled Double side cooled Single side cooled Double side cooled
Semiconductors reserves right change specifications without notice.
Doc. 5SYA 1111-02 Aug. 2000 page
5SDF 07H4501
Fig. Forward current forward voltage (typ. max. values) linear approximation max. curve 125°C.
Fig. Surge current fusing integral pulse width (max. values) non-repetitive, halfsinusoidal surge current pulses.
Fig. Typical forward voltage waveform when diode turned with high di/dt.
Fig.
Forward recovery voltage turn-on di/dt (max. values).
Semiconductors reserves right change specifications without notice.
Doc. 5SYA 1111-02 Aug. 2000 page
5SDF 07H4501
Fig.
Typical current voltage waveforms turn-off when diode connected snubber, often used circuits.
Fig.
Reverse recovery current turn di/dt (max. values).
Semiconductors reserves right change specifications without notice.
Doc. 5SYA 1111-02 Aug. 2000 page
5SDF 07H4501
Fig.
Outline drawing. dimensions millimeters represent nominal values unless stated otherwise.
thJC
(K/kW) 7.44 0.47
1.84 0.011 0.71 0.0047
2.00 0.091
Double side cooled
Fig.
Transient thermal impedance (junction-to-case) time analytical graphical form (max. values).
Semiconductors reserves right change specifications without notice.
Semiconductors Fabrikstrasse CH-5600 Lenzburg, Switzerland Tel: Fax: E-mail Internet (0)62 6419 (0)62 6306 info@ch.abb.com www.abbsem.com
Doc. 5SYA 1111-02 Aug. 2000
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