N-CHANNEL 0.35A SOT23-3L TO-92 STripFETTMII MOSFET TYPE 2N7000 2N
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2N7000 2N7002
N-CHANNEL 0.35A SOT23-3L TO-92 STripFETTMII MOSFET
TYPE 2N7000 2N7002 VDSS RDS(on) 10V) 10V) 0.35 0.20
TYPICAL RDS(on) @10V THRESHOLD DRIVE DESCRIPTION This MOSFET second generation STMicroelectronics unique "Single Feature SizeTM" stripbased process. resulting transistor shows extremely high packing density on-resistance, rugged avalanche characteristics less critical alignment steps therefore remarkable manufacturing reproducibility.
SOT23-3L
TO-92
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS HIGH SWITCHING APPLICATIONS
SOT23-3L
TO-92
ORDER CODE
PART NUMBER 2N7000 2N7002 MARKING 2N7000G ST2N PACKAGE TO-92 SOT23-3L PACKAGING BULK TAPE REEL
April 2004
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ABSOLUTE MAXIMUM RATINGS
Symbol VDGR PTOT Parameter TO-92 Drain-source Voltage (VGS Drain-gate Voltage (RGS Gate- source Voltage Drain Current (continuous) 25°C Drain Current (pulsed) Total Dissipation 25°C 0.35 0.25 0.35 Value STO23-3L Unit
width limited safe operating area
THERMAL DATA
TO-92 Rthj-amb Tstg Thermal Resistance Junction-ambient Operating Junction Temperature Storage Temperature SOT23-3L 357.1 °C/W
DEVICE MOUNTED AREA 1cm2
ON/OFF
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS Gate-body Leakage Current (VDS Gate Threshold Voltage Static Drain-source Resistance Test Conditions Rating Rating, 125°C VGS, Min. ±100 Typ. Max. Unit
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2N7000 2N7002
ELECTRICAL CHARACTERISTICS (TCASE UNLESS OTHERWISE SPECIFIED) DYNAMIC
Symbol Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions MHz, Min. Typ. Max. Unit
SWITCHING
Symbol td(on) Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions (see test circuit, Figure (see test circuit, Figure Min. Typ. Max. Unit
SWITCHING
Symbol td(off) Parameter Turn-Off Delay Time Fall Time Test Conditions 4.7, (see test circuit, Figure Min. Typ. Max. Unit
SOURCE DRAIN DIODE
Symbol ISDM IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt A/µs, 150°C (see test circuit, Figure Test Conditions Min. Typ. Max. 0.35 1.40 Unit
Note: Pulsed: Pulse duration duty cycle Pulse width limited safe operating area.
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Safe Operating Area TO-92 Thermal Impedance TO-92
Safe Operating Area SOT23-3L
Thermal Impedance SOT23-3L
Output Characteristics
Transfer Characteristics
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2N7000 2N7002
Transconductance Static Drain-source Resistance
Gate Charge Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage Temp.
Normalized Resistance Temperature
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Source-drain Diode Forward Characteristics Normalized BVDSS Temperature
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Fig. Switching Times Test Circuit Resistive Load Fig. Gate Charge test Circuit
Fig. Test Circuit Diode Recovery Behaviour
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2N7000 2N7002
TO-92 MECHANICAL DATA
DIM. MIN. 1.07 14.07 0.92 0.36 4.38 0.33 4.43 MAX. 4.78 0.48 4.83 3.86 1.74 14.87 1.12 0.56 0.042 0.553 0.036 0.014 MIN. 0.17 0.013 0.174 TYP. MAX. 0.188 0.018 0.190 0.152 0.068 0.585 0.044 0.022 inch
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SOT23-3L MECHANICAL DATA
MIN. 0.903 0.013 0.890 0.370 0.085 2.800 2.100 1.200 0.890 1.780 0.400 MAX. 1.220 0.100 1.120 0.510 0.180 3.040 2.64 1.400 1.030 2.050 0.600 MIN. 0.035 0.0005 0.035 0.014 0.003 0.110 0.082 0.047 0.035 0.070 0.015 inch TYP. MAX. 0.048 0.004 0.044 0.020 0.007 0.120 0.104 0.055 0.040 0.080 0.023
DIM.
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Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specifications mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical components life support devices systems without express written approval STMicroelectronics. logo registered trademark STMicroelectronics other names property their respective owners 2004 STMicroelectronics Rights Reserved STMicroelectronics GROUP COMPANIES Australia Belgium Brazil Canada China Czech Republic Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom United States. http://www.st.com
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