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SHEET SHEET STATUS SHEETS PMIC SHEET PREPARED Thanh Nguyen THIS D


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REVISIONS DESCRIPTION Changes accordance with 5962-R100-97. Incorporate Revision Update boilerplate MIL-PRF-38535 requirements. device types test circuit figure Update boilerplate editorial changes throughout. DATE (YR-MO-DA) 96-11-18 01-11-01 04-05-26 APPROVED Monica Poelking Thomas Hess Thomas Hess
SHEET SHEET STATUS SHEETS PMIC SHEET PREPARED Thanh Nguyen
THIS DRAWING AVAILABLE DEPARTMENTS AGENCIES DEPARTMENT DEFENSE
CHECKED Thanh Nguyen
DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216 http://www.dscc.dla.mil
APPROVED Monica Poelking DRAWING APPROVAL DATE 96-07-16 REVISION LEVEL
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, 8-BIT SERIAL/PARALLEL-IN, SERIAL-OUT SHIFT REGISTER, MONOLITHIC SILICON
SIZE CAGE CODE
AMSC
SHEET
67268
5962-96558
DSCC FORM 2233
5962-E355-03
SCOPE Scope. This drawing documents product assurance class levels consisting high reliability (device classes space application (device class choice case outlines lead finishes available reflected Part Identifying Number (PIN). When available, choice Radiation Hardness Assurance (RHA) levels reflected PIN. PIN. shown following example: 5962 Federal stock class designator designator (see 1.2.1) Drawing number 1.2.1 designator. Device classes marked devices meet MIL-PRF-38535 specified levels marked with appropriate designator. Device class marked devices meet MIL-PRF-38535, appendix specified levels marked with appropriate designator. dash indicates non-RHA device. 1.2.2 Device type(s). device type(s) identify circuit function follows: Device type Generic number 54ACS165 54ACS165E 54ACS165E Circuit function Radiation hardened, 8-bit serial/parallel-in, serial-out shift register Enhanced radiation hardened, 8-bit serial/ parallel-in, serial-out shift register Enhanced radiation hardened, 8-bit serial/ parallel-in, serial-out shift register 96558 Device type (see 1.2.2) Device class designator (see 1.2.3) Case outline (see 1.2.4) Lead finish (see 1.2.5)
1.2.3 Device class designator. device class designator single letter identifying product assurance level follows: Device class Device requirements documentation Vendor self-certification requirements MIL-STD-883 compliant, non-JAN class level microcircuits accordance with MIL-PRF-38535, appendix Certification qualification MIL-PRF-38535
1.2.4 Case outlines. case outlines designated MIL-STD-1835 follows: Outline letter Descriptive designator GDIP1-T16 CDIP2-T16 CDFP4-F16 Terminals Package style Dual-in-line Flat pack
1.2.5 Lead finish. lead finish specified MIL-PRF-38535 device classes MIL-PRF-38535, appendix device class
DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
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REVISION LEVEL
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Absolute maximum ratings. Supply voltage range (VDD). input voltage range (VIN). output voltage range (VOUT). input current, input (IIN) Latch-up immunity current (ILU) Storage temperature range (TSTG). Lead temperature (soldering, seconds). Thermal resistance, junction-to-case (JC) Junction temperature (TJ) Maximum package power dissipation (PD) Recommended operating conditions. Supply voltage range (VDD): Device type Device types Input voltage range (VIN). Output voltage range (VOUT) Case operating temperature range (TC) Maximum input rise fall time (tr, tf). Radiation features. Total dose: Device type (dose rate rads (Si)/s). Device type (dose rate rads (Si)/s). Device type (dose rate rads (Si)/s). Single event phenomenon (SEP) effective: Linear energy threshold (LET) upsets (see 4.4.4.4) Linear energy threshold (LET) latchup (see 4.4.4.4) Dose rate upset pulse) (device type 01). Dose rate survivability (device type 01). Rads (Si) Rads (Si) Rads (Si) MeV/(mg/cm MeV/(mg/cm Rads (Si)/s Rads (Si)/s
-0.3 +7.0 -0.3 -0.3 ±150 -65°C +150°C +300°C MIL-STD-1835 +175°C
+4.5 +5.5 +3.0 +5.5 +0.0 +0.0 -55°C +125°C ns/V
Stresses above absolute maximum rating cause permanent damage device. Extended operation maximum levels degrade performance affect reliability. Unless otherwise noted, voltages referenced VSS. limits parameters specified herein shall apply over full specified range case temperature range -55°C +125°C unless otherwise noted. Derate system propagation delays difference rise time switch point ns/V.
Radiation testing performed standard evaluation circuit. Device types tested accordance with MIL-STD-883, method 1019, condition Device type tested accordance with MIL-STD-883, method 1019, condition When characterized result procuring activities request, condition will specified device types
DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
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APPLICABLE DOCUMENTS Government specification, standards, handbooks. following specification, standards, handbooks form part this drawing extent specified herein. Unless otherwise specified, issues these documents those cited solicitation contract. DEPARTMENT DEFENSE SPECIFICATION MIL-PRF-38535 Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT DEFENSE STANDARDS MIL-STD-883 MIL-STD-1835 Test Method Standard Microcircuits. Interface Standard Electronic Component Case Outlines.
DEPARTMENT DEFENSE HANDBOOKS MIL-HDBK-103 MIL-HDBK-780 List Standard Microcircuit Drawings. Standard Microcircuit Drawings.
(Copies these documents available online www.dodssp.daps.mil from Standardization Document Order Desk, Robbins Avenue, Building Philadelphia, 19111-5094.) Order precedence. event conflict between text this drawing references cited herein, text this drawing takes precedence. Nothing this document, however, supersedes applicable laws regulations unless specific exemption been obtained. REQUIREMENTS Item requirements. individual item requirements device classes shall accordance with MIL-PRF-38535 specified herein modified device manufacturer's Quality Management (QM) plan. modification plan shall affect form, fit, function described herein. individual item requirements device class shall accordance with MIL-PRF-38535, appendix non-JAN class level devices specified herein. Design, construction, physical dimensions. design, construction, physical dimensions shall specified MIL-PRF-38535 herein device classes MIL-PRF-38535, appendix herein device class 3.2.1 Case outlines. case outlines shall accordance with 1.2.4 herein. 3.2.2 Terminal connections. terminal connections shall specified figure 3.2.3 Truth table. truth table shall specified figure 3.2.4 Logic diagram. logic diagram shall specified figure 3.2.5 Switching waveforms test circuits. switching waveforms test circuits shall specified figure 3.2.6 Irradiation test connections. irradiation test connections shall specified table III. Electrical performance characteristics postirradiation parameter limits. Unless otherwise specified herein, electrical performance characteristics postirradiation parameter limits specified table shall apply over full case operating temperature range.
DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000
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Electrical test requirements. electrical test requirements shall subgroups specified table IIA. electrical tests each subgroup described table Marking. part shall marked with listed herein. addition, manufacturer's also marked. packages where marking entire number feasible space limitations, manufacturer option marking "5962-" device. product using this option, designator shall still marked. Marking device classes shall accordance with MIL-PRF-38535. Marking device class shall accordance with MIL-PRF-38535, appendix 3.5.1 Certification/compliance mark. certification mark device classes shall "QML" required MIL-PRF-38535. compliance mark device class shall required MIL-PRF-38535, appendix Certificate compliance. device classes certificate compliance shall required from QML-38535 listed manufacturer order supply requirements this drawing (see 6.6.1 herein). device class certificate compliance shall required from manufacturer order listed approved source supply MIL-HDBK-103 (see 6.6.2 herein). certificate compliance submitted DSCC-VA prior listing approved source supply this drawing shall affirm that manufacturer's product meets, device classes requirements MIL-PRF-38535 herein device class requirements MIL-PRF-38535, appendix herein. Certificate conformance. certificate conformance required device classes MIL-PRF-38535 device class MIL-PRF-38535, appendix shall provided with each microcircuits delivered this drawing. Notification change device class device class notification DSCC-VA change product (see herein) involving devices acquired this drawing required change that affects this drawing. Verification review device class device class DSCC, DSCC's agent, acquiring activity retain option review manufacturer's facility applicable required documentation. Offshore documentation shall made available onshore option reviewer. 3.10 Microcircuit group assignment device class Device class devices covered this drawing shall microcircuit group number (see MIL-PRF-38535, appendix
DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000
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TABLE Electrical performance characteristics. Test Symbol Test conditions -55°C +125°C unless otherwise specified level input voltage inputs affecting output under test, -100 inputs affecting output under test, -100 inputs affecting output under test, inputs affecting output under test, input under test, other inputs input under test, other inputs Device type Group subgroups Limits 3.15 3.15 3.15 3.85 3.85 3.85 1.35 1.35 1.35 1.65 1.65 1.65 2.75 Unit
High level input voltage
High level output voltage
2.75 2.75 4.25
level output voltage
4.25 4.25 0.25
0.25 0.25 0.25
Input current high
0.25 0.25 +1.0
Input current
+1.0 +1.0 -1.0
-1.0 -1.0
footnotes table.
DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000
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TABLE Electrical performance characteristics Continued. Test Symbol Test conditions -55°C +125°C unless otherwise specified output under test, VOUT output under test, VOUT output under test, VOUT output under test, VOUT VOUT MHz, 4.4.1c MHz, 4.4.1c switching output Functional test 4.4.1b 4.4.1b footnotes table. Device type Group subgroups Limits -6.0 Unit
Output current (source)
-6.0 -6.0 -8.0
Output current (sink)
-8.0 -8.0 10.0 10.0 10.0 ±100 ±200 15.0 15.0 1.16 1.16 1.16
Quiescent supply current Short circuit output current Input capacitance Output capacitance Switching power dissipation
IDDQ
COUT
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TABLE Electrical performance characteristics Continued. Test Symbol Test conditions -55°C +125°C unless otherwise specified minimum figure minimum figure minimum figure minimum figure minimum figure minimum figure footnotes table. Device type Group subgroups Limits 18.0 18.0 18.0 14.0 14.0 14.0 22.0 22.0 22.0 18.0 18.0 18.0 21.0 21.0 21.0 17.0 17.0 17.0 25.0 25.0 25.0 21.0 21.0 21.0 18.0 18.0 18.0 14.0 14.0 14.0 22.0 22.0 22.0 18.0 18.0 18.0 Unit
Propagation delay time,
tPLH1
tPHL1
Propagation delay time, SH/LD
tPLH2
DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000
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TABLE Electrical performance characteristics Continued. Test Symbol Test conditions -55°C +125°C unless otherwise specified minimum figure minimum figure minimum figure minimum figure footnotes table. Device type Group subgroups Limits 21.0 21.0 21.0 17.0 17.0 17.0 25.0 25.0 25.0 21.0 21.0 21.0 17.0 17.0 17.0 13.0 13.0 13.0 21.0 21.0 21.0 17.0 17.0 17.0 Unit
Propagation delay time, SH/LD
tPHL2
Propagation delay time,
tPLH3
DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000
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TABLE Electrical performance characteristics Continued. Test Symbol Test conditions -55°C +125°C unless otherwise specified minimum figure minimum figure minimum figure minimum figure minimum figure minimum figure footnotes table. Device type Group subgroups Limits 21.0 21.0 21.0 17.0 17.0 17.0 25.0 25.0 25.0 21.0 21.0 21.0 18.0 18.0 18.0 14.0 14.0 14.0 22.0 22.0 22.0 18.0 18.0 18.0 20.0 20.0 20.0 16.0 16.0 16.0 24.0 24.0 24.0 20.0 20.0 20.0 Unit
Propagation delay time,
tPHL3
Propagation delay time,
tPLH4
tPHL4
DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000
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TABLE Electrical performance characteristics Continued. Test Symbol Test conditions -55°C +125°C unless otherwise specified minimum figure minimum figure minimum figure minimum figure minimum figure minimum figure minimum figure minimum figure minimum figure minimum figure minimum figure minimum figure Device type Group subgroups Limits Maximum clock frequency fMAX 71.0 71.0 71.0 71.0 71.0 71.0 Unit
Setup time, before
Setup time, before
Setup time, data before SH/LD
Setup time, SH/LD before
Hold time, after
footnotes table.
DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000
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TABLE Electrical performance characteristics Continued. Test Symbol Test conditions -55°C +125°C unless otherwise specified minimum figure minimum figure minimum figure minimum figure minimum figure minimum figure minimum figure minimum figure Device type Group subgroups Limits Hold time, after Unit
Hold time, data after SH/LD
pulse width, high
SH/LD pulse width,
footnotes next sheet.
DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000
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TABLE Electrical performance characteristics Continued. Each input/output, applicable, shall tested specified temperature, specified limits, tests table herein. Output terminals designated shall high level logic, level logic, open, except IDDQ test, output terminals shall open. When performing IDDQ test, current meter shall placed circuit such that current flows through meter. negative positive voltage current values, sign designates potential difference reference direction current flow respectively; absolute value magnitude, sign, relative minimum maximum limits, applicable, listed herein. Devices supplied this drawing meet levels irradiation. However, device type tested accordance with MIL-STD-883, method 1019, condition level "H"; device type tested accordance with MIL-STD-883, method 1019, condition level "H"; device type tested accordance with MIL-STD-883, method 1019, condition level "G". Under method 1019, condition devices irradiated with dose rate above rad(Si)/sec. post irradiation values identical unless otherwise specified table When performing post irradiation electrical measurements level, TA=+25°C. This test guaranteed based characterization data tested. This parameter supplied design limit guaranteed tested. more than output should shorted time maximum duration second.
This value calculated during design/qualification process supplied design limit tested. Total power consumption determined both idle/standby power consumption (Ps) frequency" power consumption (Pf). determine standby power consumption formula: (Loads Prdy VOL) where number switching outputs; frequency device; loads resistive power component, typically load; Prdy percent duty cycle that output sinking current. test vectors used verify truth table shall, minimum, test functions each input output. possible input output logic patterns function shall guaranteed, tested, truth table figure herein. VOUT measurements, tested tested propagation delay tests, paths must tested.
Based characterization, hold time (th3) assumed data setup time (ts3) This guaranteed tested. TABLE test limits. Device type Temperature ±10°C Effective upsets [MeV/(mg/cm Maximum device cross section /bit
Bias latch-up test latch-up
+25°C
test conditions, 4.4.4.4 herein. Technology characterization model verification supplemented in-line data used lieu end-of-line testing. Test plan must approved qualifying activity. Worst case temperature +125°C. Tested MeV/(mg/cm with latch-up (SEL).
DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000
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Device type Case outlines Terminal number Terminal symbol SH/LD
Terminal number Terminal symbol
FIGURE Terminal connections.
Inputs Parallel SH/LD
Internal outputs
Outputs
High voltage level voltage level Irrelevant Low-to-high clock transition QA0, QB0, level respectively, before indicated steady-state input conditions were established. QAn, level before most recent low-to-high clock transition; indicates one-bit shift. FIGURE Truth table.
DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000
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FIGURE Logic diagram.
DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000
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FIGURE Switching waveforms test circuits.
DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000
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FIGURE Switching waveforms test circuits Continued.
DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000
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NOTES: VREF VDD/2. minimum equivalent (includes test probe capacitance). ISRC -1.0 ISNK tPHL tPLH measurements. Note, either test circuit used these measurements. Input signal from pulse generator: VDD; MHz; V/ns ±0.3 V/ns; V/ns ±0.3 V/ns; shall measured from from VDD, respectively. FIGURE Switching waveforms test circuits Continued.
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VERIFICATION Sampling inspection. device classes sampling inspection procedures shall accordance with MIL-PRF-38535 modified device manufacturer's Quality Management (QM) plan. modification plan shall affect form, fit, function described herein. device class sampling inspection procedures shall accordance with MIL-PRF-38535, appendix Screening. device classes screening shall accordance with MIL-PRF-38535, shall conducted devices prior qualification technology conformance inspection. device class screening shall accordance with method 5004 MIL-STD-883, shall conducted devices prior quality conformance inspection. 4.2.1 Additional criteria device class Burn-in test, method 1015 MIL-STD-883. Test condition test circuit shall maintained manufacturer under document revision level control shall made available preparing acquiring activity upon request. test circuit shall specify inputs, outputs, biases, power dissipation, applicable, accordance with intent specified method 1015 MIL-STD-883. +125°C, minimum. Interim final electrical test parameters shall specified table herein.
4.2.2 Additional criteria device classes burn-in test duration, test condition test temperature, approved alternatives shall specified device manufacturer's plan accordance with MIL-PRF-38535. burn-in test circuit shall maintained under document revision level control device manufacturer's Technology Review Board (TRB) accordance with MIL-PRF-38535 shall made available acquiring preparing activity upon request. test circuit shall specify inputs, outputs, biases, power dissipation, applicable, accordance with intent specified method 1015 MIL-STD-883.
Interim final electrical test parameters shall specified table herein. Additional screening device class beyond requirements device class shall specified MIL-PRF-38535, appendix
Qualification inspection device classes Qualification inspection device classes shall accordance with MIL-PRF-38535. Inspections performed shall those specified MIL-PRF-38535 herein groups inspections (see 4.4.1 through 4.4.4). Conformance inspection. Technology conformance inspection classes shall accordance with MIL-PRF-38535 including groups inspections specified herein. Quality conformance inspection device class shall accordance with MIL-PRF-38535, appendix specified herein. Inspections performed device class shall those specified method 5005 MIL-STD-883 herein groups inspections (see 4.4.1 through 4.4.4).
DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000
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4.4.1 Group inspection. Tests shall specified table herein. device class subgroups tests shall sufficient verify truth table figure herein. device classes subgroups shall include verifying functionality device. COUT shall measured only initial test after process design changes which affect capacitance. shall measured between designated terminal frequency MHz. COUT, test applicable pins five devices with zero failures.
4.4.2 Group inspection. group inspection end-point electrical parameters shall specified table herein. 4.4.2.1 Additional criteria device class Steady-state life test conditions, method 1005 MIL-STD-883: Test condition test circuit shall maintained manufacturer under document revision level control shall made available preparing acquiring activity upon request. test circuit shall specify inputs, outputs, biases, power dissipation, applicable, accordance with intent specified method 1005 MIL-STD-883. +125°C, minimum. Test duration: 1,000 hours, except permitted method 1005 MIL-STD-883.
4.4.2.2 Additional criteria device classes steady-state life test duration, test condition test temperature, approved alternatives shall specified device manufacturer's plan accordance with MIL-PRF-38535. test circuit shall maintained under document revision level control device manufacturer's accordance with MIL-PRF-38535 shall made available acquiring preparing activity upon request. test circuit shall specify inputs, outputs, biases, power dissipation, applicable, accordance with intent specified method 1005 MIL-STD-883. 4.4.3 Group inspection. group inspection end-point electrical parameters shall specified table herein. 4.4.4 Group inspection. Group inspection required only parts intended marked radiation hardness assured (see herein). End-point electrical parameters shall specified table herein. device classes devices test vehicle shall subjected radiation hardness assured tests specified MIL-PRF-38535 level being tested. device class devices shall subjected radiation hardness assured tests specified MIL-PRF-38535, appendix level being tested. device classes must meet postirradiation end-point electrical parameter limits defined table +25°C ±5°C, after exposure, subgroups specified table herein.
4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall performed accordance with MIL-STD-883, method 1019 specified herein. 4.4.4.1.1 Accelerated aging testing. Accelerated aging testing shall performed devices requiring level greater than rads (Si). post-anneal end-point electrical parameter limits shall specified table herein shall pre-irradiation end-point electrical parameter limits 25°C ±5°C. Testing shall performed initial qualification after design process changes which affect response device. 4.4.4.2 Dose rate induced latchup testing. Dose rate induced latchup testing shall performed accordance with method 1020 MIL-STD-883 specified herein (see herein). Tests shall performed devices, SEC, approved test structures technology qualification after design process changes which affect capability process.
DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000
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4.4.4.3 Dose rate upset testing. Dose rate upset testing shall performed accordance with method 1021 MIL-STD-883 herein (see herein). Transient dose rate upset testing shall performed initial qualification after design process change which affect performance devices. Test devices with defects unless otherwise specified. Transient dose rate upset testing class devices shall performed specified approved radiation hardness assurance plan MIL-PRF-38535. TABLE IIA. Electrical test requirements. Test requirements Subgroups accordance with MIL-STD-883, method 5005, table Device class Interim electrical parameters (see 4.2) Final electrical parameters (see 4.2) Group test requirements (see 4.4) Group end-point electrical parameters (see 4.4) Group end-point electrical parameters (see 4.4) Group end-point electrical parameters (see 4.4) Subgroups accordance with MIL-PRF-38535, table III)
Device class
Device class
applies subgroups applies subgroups delta's. Delta limits, specified table herein, shall required where specified, delta values shall completed with reference zero hour electrical parameters.
TABLE IIB. Burn-in operating life test, delta parameters (+25°C). Parameters Output voltage Output voltage high Symbol Delta limits ±100 ±100
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4.4.4.4 Single event phenomena (SEP). testing shall required class devices (see herein). testing shall performed technology process Standard Evaluation Circuit (SEC) alternate test vehicle approved qualifying activity initial qualification after design process changes which affect upset latchup characteristics. recommended test conditions follows: beam angle incidence shall between normal surface normal, inclusive (i.e. angle 60°). shadowing beam fixturing package related effects allowed. fluence shall errors ions/cm
flux shall between ions/cm cross-section shall verified flux independent measuring cross-section flux rates which differ least order magnitude. particle range shall micron silicon. test temperature shall +25°C upset measurements maximum rated operating temperature ±10°C latchup measurements. Bias conditions shall defined manufacturer latchup measurements. Test four devices with zero failures. test limits, table herein. TABLE III. Irradiation test connections. Device type Open Ground NOTE: Each except will have resistor 2.49 irradiation testing. Methods inspection. Methods inspection shall specified follows: 4.5.1 Voltage current. Unless otherwise specified, voltages given referenced microcircuit terminal. Currents given conventional current positive when flowing into referenced terminal. PACKAGING Packaging requirements. requirements packaging shall accordance with MIL-PRF-38535 device classes MIL-PRF-38535, appendix device class NOTES Intended use. Microcircuits conforming this drawing intended Government microcircuit applications (original equipment), design applications, logistics purposes. 6.1.1 Replaceability. Microcircuits covered this drawing will replace same generic device covered contractorprepared specification drawing. 6.1.2 Substitutability. Device class devices will replace device class devices.
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Configuration control SMD's. proposed changes existing SMD's will coordinated with users record individual documents. This coordination will accomplished using Form 1692, Engineering Change Proposal. Record users. Military industrial users should inform Defense Supply Center Columbus (DSCC) when system application requires configuration control which SMD's applicable that system. DSCC will maintain record users this list will used coordination distribution changes drawings. Users drawings covering microelectronics devices (FSC 5962) should contact DSCC-VA, telephone (614) 692-0544. Comments. Comments this drawing should directed DSCC-VA, Columbus, Ohio 43216-5000, telephone (614) 692-0547. Abbreviations, symbols, definitions. abbreviations, symbols, definitions used herein defined MIL-PRF-38535 MIL-HDBK-1331. Sources supply. 6.6.1 Sources supply device classes Sources supply device classes listed QML-38535. vendors listed QML-38535 have submitted certificate compliance (see herein) DSCC-VA have agreed this drawing. 6.6.2 Approved sources supply device class Approved sources supply class listed MIL-HDBK-103. vendors listed MIL-HDBK-103 have agreed this drawing certificate compliance (see herein) been submitted accepted DSCC-VA. Additional information. copy following additional data shall maintained available from device manufacturer: upset levels. Test conditions (SEP). Number upsets (SEP). Number transients (SEP). Occurrence latchup (SEP).
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STANDARD MICROCIRCUIT DRAWING BULLETIN DATE: 04-05-26 Approved sources supply 5962-96558 listed below immediate acquisition information only shall added MIL-HDBK-103 QML-38535 during next revision. MIL-HDBK-103 QML-38535 will revised include addition deletion sources. vendors listed below have agreed this drawing certificate compliance been submitted accepted DSCC-VA. This information bulletin superseded next dated revision MIL-HDBK-103 QML-38535.
Standard microcircuit drawing 5962H9655801VEA 5962H9655801VXA 5962H9655801VEC 5962H9655801VXC 5962H9655801QEA 5962H9655801QXA 5962H9655801QEC 5962H9655801QXC 5962H9655802VXA 5962H9655802VXC 5962H9655802QXA 5962H9655802QXC 5962G9655803VXA 5962G9655803VXC 5962G9655803QXA 5962G9655803QXC
Vendor CAGE number 65342 65342 65342 65342 65342 65342 65342 65342 65342 65342 65342 65342 65342 65342 65342 65342
Vendor similar UT54ACS165PVAH UT54ACS165UVAH UT54ACS165PVCH UT54ACS165UVCH UT54ACS165PQAH UT54ACS165UQAH UT54ACS165PQCH UT54ACS165UQCH UT54ACS165EUVAH UT54ACS165EUVCH UT54ACS165EUQAH UT54ACS165EUQCH UT54ACS165EUVAG UT54ACS165EUVCG UT54ACS165EUQAG UT54ACS165EUQCG
lead finish shown each representing hermetic package most readily available from manufacturer listed that part. desired lead finish listed contact vendor determine availability. Caution. this number item acquisition. Items acquired this number satisfy performance requirements this drawing. Vendor CAGE number 65342 Vendor name address Aeroflex Colorado Springs, Inc. 4350 Centennial Boulevard Colorado Springs, Colorado 80907-3486
information contained herein disseminated convenience only Government assumes liability whatsoever inaccuracies information bulletin.

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