Data Sheet November, 2004 FEATURES 20ns (3.3 volt supply) maximum

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Data Sheet November, 2004 FEATURES 20ns (3.3 volt supply) maximum

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QCOTSUT8Q512 512K SRAM
Data Sheet November, 2004
FEATURES 20ns (3.3 volt supply) maximum address access time Asynchronous operation compatibility with industrystandard 512K SRAMs compatible inputs output levels, three-state bidirectional data Typical radiation performance Total dose: 50krads >100krads(Si), orbit, using Aeroflex UTMC patented shielded package Immune MeV-cm2/mg LETTH(0.25) MeV-cm2/mg Saturated Cross Section bit, 5.0E-9 <1E-8 errors/bit-day, Adams geosynchronous heavy Packaging options: 36-lead ceramic flatpack (3.42 grams) 36-lead flatpack shielded (10.77 grams) Standard Microcircuit Drawing 5962-99607 compliant
INTRODUCTION QCOTSUT8Q512 Quantified Commercial Off-theShelf product high-performance CMOS static organized 524,288 words bits. Easy memory expansion provided active Chip Enable (E), active Output Enable (G), three-state drivers. This device power-down feature that reduces power consumption more than when deselected. Writing device accomplished taking Chip Enable input Write Enable inputs LOW. Data eight pins (DQ0 through DQ7) then written into location specified address pins through A18). Reading from device accomplished taking Chip Enable Output Enable while forcing Write Enable HIGH. Under these conditions, contents memory location specified address pins will appear pins. eight input/output pins (DQ0 through DQ7) placed high impedance state when device deselected HIGH), outputs disabled HIGH), during write operation LOWand LOW).
Clk. Gen.
Pre-Charge Circuit
Select
Memory Array 1024 Rows 512x8 Columns
Circuit Column Select Data Control Gen.
Figure UT8Q512 SRAM Block Diagram
DEVICE OPERATION
UT8Q512 three control inputs called Enable (E), Write Enable (W), Output Enable (G); address inputs, A(18:0); eight bidirectional data lines, DQ(7:0). Device Enable controls device selection, active, standby modes. Asserting enables device, causes rise active value, decodes address inputs select 524,288 words memory. controls read write operations. During read cycle, must asserted enable outputs. Table Device Operation Truth Table Mode 3-state Data 3-state Data Mode Standby Write Read2 Read
Figure 25ns SRAM Pinout (36)
NAMES A(18:0) DQ(7:0) Address Data Input/Output Enable Write Enable Output Enable Power Ground
Notes: defined "don't care" condition. Device active; outputs disabled.
READ CYCLE combination greater than (min) less than (max) defines read cycle. Read access time measured from latter Device Enable, Output Enable, valid address valid data output. SRAM Read Cycle Address Access figure initiated change address inputs while chip enabled with asserted deasserted. Valid data appears data outputs DQ(7:0) after specified tAVQV satisfied. Outputs remain active throughout entire cycle. long Device Enable Output Enable active, address inputs change rate equal minimum read cycle time (tAVAV). SRAM read Cycle Chip Enable Controlled Access figure initiated going active while remains asserted, remains deasserted, addresses remain stable entire cycle. After specified tETQV satisfied, eight-bit word addressed A(18:0) accessed appears data outputs DQ(7:0). SRAM read Cycle Output Enable Controlled Access figure initiated going active while asserted, deasserted, addresses stable. Read access time tGLQV unless tAVQV tETQV have been satisfied.
WRITE CYCLE combination less than VIL(max) less than VIL(max) defines write cycle. state "don't care" write cycle. outputs placed high-impedance state when either greater than VIH(min), when less than VIL(max). Write Cycle Write Enable Controlled Access figure defined write terminated going high, with still active. write pulse width defined tWLWH when write initiated tETWH when write initiated Unless outputs have been previously placed highimpedance state user must wait tWLQZ before applying data nine bidirectional pins DQ(7:0) avoid contention. Write Cycle Chip Enable Controlled Access figure defined write terminated latter going inactive. write pulse width defined tWLEF when write initiated tETEF when write initiated going active. initiated write, unless outputs have been previously placed high-impedance state
user must wait tWLQZ before applying data eight bidirectional pins DQ(7:0) avoid contention. TYPICAL RADIATION HARDNESS Table Typical Radiation Hardness Design Specifications1 Total Dose Heavy Error Rate2 <1E-8 krad(Si) nominal Errors/Bit-Day
Notes: SRAM will latchup during radiation exposure under recommended operating conditions. worst case particle environment, Geosynchronous orbit, mils Aluminum.
ABSOLUTE MAXIMUM RATINGS1 (Referenced VSS) SYMBOL VI/O TSTG PARAMETER supply voltage Voltage Storage temperature Maximum power dissipation Maximum junction temperature2 Thermal resistance, junction-to-case3 input current LIMITS -0.5 4.6V -0.5 4.6V +150°C 1.0W +150°C 10°C/W
Notes: Stresses outside listed absolute maximum ratings cause permanent damage device. This stress rating only, functional operation device these other conditions beyond limits indicated operational sections this specification recommended. Exposure absolute maximum rating conditions extended periods affect device reliability performance. Maximum junction temperature increased +175°C during burn-in steady-static life. Test MIL-STD-883, Method 1012.
RECOMMENDED OPERATING CONDITIONS SYMBOL PARAMETER Positive supply voltage Case temperature range LIMITS 3.6V screening: -55° +125°C screening: -40° +125°C input voltage
ELECTRICAL CHARACTERISTICS (Pre/Post-Radiation)* (-55°C +125°C screening -40oC +125oC screening) (VDD 3.3V 0.3) SYMBOL VOL1 VOL2 VOH1 VOH2 CIN1 CIO1 PARAMETER High-level input voltage Low-level input voltage Low-level output voltage Low-level output voltage High-level output voltage High-level output voltage Input capacitance Bidirectional capacitance Input leakage current Three-state output leakage current (TTL) (TTL) 8mA, =3.0V (TTL) 200µA,VDD =3.0V (CMOS) -4mA,VDD =3.0V (TTL) -200µA,VDD =3.0V (CMOS) 1MHz 1MHz VDD, (max) (max) (max) Inputs: 0.8V, 2.0V IOUT (max) Inputs: 0.8V, 2.0V IOUT (max) Inputs: IOUT (max) 0.5V -55°C 25°C -40oC 25oC +125°C VDD-0.10 CONDITION 0.08 UNIT
IOS2, IDD(OP)
Short-circuit output current Supply current operating 1MHz
IDD1(OP)
Supply current operating @40MHz
IDD2(SB)
Nominal standby supply current @0MHz
Notes: Post-radiation performance guaranteed 25°C MIL-STD-883 Method 1019. Measured only initial qualification after process design changes that could affect input/output capacitance. Supplied design limit guaranteed tested. more than output shorted time maximum duration second.
CHARACTERISTICS READ CYCLE (Pre/Post-Radiation)* (-55°C +125°C screening -40oC +125oC screening) (VDD 3.3V 0.3) SYMBOL tAVAV1 tAVQV tAXQX tGLQX tGLQV tGHQZ2 tETQX3 tETQV3 tEFQZ1,2,4 Read cycle time Read access time Output hold time G-controlled Output Enable time G-controlled Output Enable time (Read Cycle G-controlled output three-state time E-controlled Output Enable time E-controlled access time E-controlled output three-state time PARAMETER UNIT
Notes: Post-radiation performance guaranteed 25°C MIL-STD-883 Method 1019. Functional test. Three-state defined 300mV change from steady-state output voltage (see Figure (enable true) notation refers falling edge immunity does affect read parameters. (enable false) notation refers rising edge immunity does affect read parameters.
High Active Levels
Active High Levels
VLOAD 300mV VLOAD VLOAD 300mV
300mV
300mV
Figure 3-Volt SRAM Loading
tAVAV A(18:0)
DQ(7:0)
Previous Valid Data
Valid Data tAVQV
Assumptions: (max) (min)
tAXQX Figure SRAM Read Cycle Address Access
A(18:0) tETQV DQ(7:0)
Assumptions: (max) (min)
tEFQZ
DATA VALID
tETQX
Figure SRAM Read Cycle Chip Enable-Controlled Access
tAVQV A(18:0) tGHQZ tGLQX DQ(7:0)
Assumptions: (max) (min)
DATA VALID
tGLQV
Figure SRAM Read Cycle Output Enable-Controlled Access
CHARACTERISTICS WRITE CYCLE (Pre/Post-Radiation)* (-55°C +125°C screening -40oC +125oC screening) (VDD 3.3V 0.3) SYMBOL tAVAV1 tETWH tAVET tAVWL tWLWH tWHAX tEFAX tWLQZ2 tWHQX tETEF tDVWH tWHDX2 tWLEF tDVEF2 tEFDX tAVWH tWHWL1 Write cycle time Device Enable write Address setup time write controlled) Address setup time write controlled) Write pulse width Address hold time write controlled) Address hold time Device Enable controlled) controlled three-state time controlled Output Enable time Device Enable pulse width controlled) Data setup time Data hold time Device Enable controlled write pulse width Data setup time Data hold time Address valid write Write disable time PARAMETER UNIT
Notes: Post-radiation performance guaranteed 25°C MIL-STD-883 Method 1019. Functional test performed with outputs disabled high). Three-state defined 300mV change from steady-state output voltage (see Figure
A(18:0) tAVAV2 tAVWH tETWH tAVWL Q(7:0) tWLQZ D(7:0)
Assumptions: (max). (min) then Q(8:0) will three-state entire cycle. high tAVAV cycle. APPLIED DATA
tWHWL tWHAX
tWLWH
tWHQX
tDVWH
tWHDX
Figure SRAM Write Cycle Write Enable Controlled Access
tAVAV3 A(18:0) tAVET tETEF tEFAX
tAVET tWLEF
APPLIED DATA
tETEF tEFAX
D(7:0)
tWLQZ Q(7:0)
tDVEF
tEFDX
Assumptions Notes: (max). (min) then Q(7:0) will three-state entire cycle. Either scenario above occur. high tAVAV cycle.
Figure SRAM Write Cycle Chip Enable Controlled Access
CMOS VDD-0.05V ohms VLOAD 1.55V 0.5V
50pF Notes: 50pF including scope probe test socket capacitance. Measurement data output occurs high high transition mid-point (i.e., CMOS input VDD/2). Input Pulses
Figure Test Loads Input Waveforms
DATA RETENTION CHARACTERISTICS (Pre/Post-Irradiation) Second Data Retention Test) SYMBOL IDDR tEFR1,3 tR1,3 PARAMETER data retention Data retention current Chip select data retention time Operation recovery time MINIMUM tAVAV MAXIMUM -2.0 UNIT
Notes: .2V, other inputs VSS. Data retention current (IDDR) 25oC. guaranteed tested.
DATA RETENTION CHARACTERISTICS (Pre/Post-Irradiation) Second Data Retention Test, -55oC +125oC screening SYMBOL PARAMETER VDD1 tEFR2, tR2, data retention Chip select data retention time Operation recovery time
MINIMUM tAVAV
MAXIMUM
UNIT
Notes: Performed (min) (max). VSS, other inputs VSS. guaranteed tested.
DATA RETENTION MODE
tEFR
2.0V
Figure Data Retention Waveform
PACKAGING
exposed metalized areas gold plated over electroplated nickel MIL-PRF-38535. electrically connected VSS. Lead finishes accordance MIL-PRF-38535. Lead position coplanarity measured. mark vendor option. Total weight approx. 3.42 grams
Figure 36-pin Ceramic FLATPACK
package finishes MIL-PRF-38535. Letter designations cross-reference MIL-STD-1835. leads increase max. limit 0.003 measured center flat, when lead finish (solder) applied. Total weight approx. 10.77 X-rays ineffective test shielded packages.
Figure 36-lead flatpack shielded package
ORDERING INFORMATION 512K SRAM:
UT8Q512
Lead Finish: solder dipped Gold Factory option (gold solder)
Screening: Military Temperature Range flow Prototype flow Extended Industrial Temperature Range Flow (-40oC +125oC)
Package Type: 36-lead flatpack shielded package (bottom brazed) 36-lead flatpack package (bottom brazed)
25ns access time, 3.3V operation 20ns access time, 3.3V operation -Aeroflex UTMC Core Part Number
Notes: Lead finish (A,C, must specified. specified when ordering, then part marking will match lead finish will either (solder) (gold). Prototype flow UTMC Manufacturing Flows Document. Tested 25°C only. Lead finish GOLD ONLY. Radiation neither tested guaranteed. Military Temperature Range flow UTMC Manufacturing Flows Document. Devices tested -55°C, room temp, +125°C. Radiation neither tested guaranteed. 36LBBFP Shielded Package reduced high orders only. Extended Industrial Temperature Range flow UTMC Manufacturing Flows Document. Devices tested -40°C +125°C. Radiation neither tested guaranteed.
512K SRAM: 5962 99607
Lead Finish: solder dipped Gold Factory Option (gold solder) Case Outline: 36-lead flatpack shielded package (bottom-brazed) 36-lead ceramic flatpack (bottom-brazed) Class Designator: Class Class Device Type 25ns access time, 3.3V operation, Mil-Temp 25ns access time, 3.3V operation, Extended Industrial Temp (-40oC +125oC) 20ns access time, 3.3V operation, Mil-Temp 20ns access time, 3.3V operation, Extended Industrial Temp (-40oC +125oC) Drawing Number: 99607 Total Dose: (10krad)(Si)) (30krad)(Si)) (contact factory) (50krad(Si)) (contact factory)
Federal Stock Class Designator: options
Notes: 1.Lead finish (A,C, must specified. 2.If specified when ordering, part marking will match lead finish will either (solder) (gold). 3.Total dose radiation must specified when ordering.
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Aeroflex Colorado Springs, Inc., reserves right make changes products services herein time without notice. Consult Aeroflex authorized sales representative verify that information this data sheet current before using this product. Aeroflex does assume responsibility liability arising application product service described herein, except expressly agreed writing Aeroflex; does purchase, lease, product service from Aeroflex convey license under patent rights, copyrights, trademark rights, other intellectual rights Aeroflex third parties.
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Data Sheet November, 2004 FEATURES 20ns (3.3 volt supply) maximum

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