AO4405 uses advanced trench technology provide excellent RDS(ON) with

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AO4405 uses advanced trench technology provide excellent RDS(ON) with

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AO4405, AO4405L Green Product P-Channel Enhancement Mode Field Effect Transistor
AO4405 uses advanced trench technology provide excellent RDS(ON) with gate charge. This device suitable load switch applications. AO4405L( Green Product offered lead-free package.
Features
-30V -6.0A RDS(ON) (VGS -10V) RDS(ON) (VGS -4.5V)
SOIC-8 View
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current TA=25°C Power Dissipation TA=70°C Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead TA=25°C TA=70°C TSTG
Maximum -6.0 -5.1
Units
Symbol
Steady-State Steady-State
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
AO4405, AO4405L
Electrical Characteristics J=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-24V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, D=6A RDS(ON) Static Drain-Source On-Resistance VGS=-4.5V, D=-4A Forward Transconductance VDS=-5V, ID=-6A IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125°C -0.78 -4.2 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 14.7 VGS=-10V, VDS=-15V, D=-6A VGS=-10V, VDS=-15V, RL=2.5, RGEN=3 IF=-6A, dI/dt=100A/µs IF=-6A, dI/dt=100A/µs 28.2 13.5 14.7 -1.8 ±100 Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS (10V) Total Gate Charge (10V) (4.5V) Total Gate Charge (4.5V) tD(on) tD(off) Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
value measured with device mounted 1in2 FR-4 board with 2oz. Copper, still environment with =25°C. value given application depends user's specific board design. current rating based thermal resistance rating. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures 6,12,14 obtained using 80µs pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with TA=25°C. curve provides single pulse rating.
THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
AO4405, AO4405L
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
-10V -4.5V -3.5V -ID(A) 5.00 -VGS(Volts) Figure Transfer Characteristics Normalized On-Resistance VDS=-5V
125°C
VGS=-3V -2.5V 1.00 2.00 3.00 4.00
25°C
0.00
-VDS (Volts) Figure On-Region Characteristics
RDS(ON)
VGS=-4.5V
VGS=-10V VGS=-4.5V
VGS=-10V
ID=-5A
Figure On-Resistance Drain Current Gate Voltage RDS(ON) ID=-5A
Temperature (°C) Figure On-Resistance Junction Temperature 1E+01 1E+00 1E-01 1E-02 125°C
125°C 1E-03 THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL 25°C COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING 1E-04 SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, 25°C FUNCTIONS RELIABILITY WITHOUT NOTICE. -VGS (Volts) Figure On-Resistance Gate-Source Voltage 1E-05 1E-06 -VSD (Volts) Figure Body-Diode Characteristics
Alpha Omega Semiconductor, Ltd.
AO4405, AO4405L
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
-VGS (Volts) (nC) Figure Gate-Charge Characteristics 1200 VDS=-15V ID=-6A Capacitance (pF) 1000 Coss Crss
Ciss
-VDS (Volts) Figure Capacitance Characteristics
TJ(Max)=150°C TA=25°C RDS(ON) limited 0.1s
10µs 100µs 10ms Power
TJ(Max)=150°C TA=25°C
(Amps)
-VDS (Volts) Figure Maximum Forward Biased Safe Operating Area (Note
0.001
0.01
1000
Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE. Single Pulse 0.01 0.00001 0.0001 0.001 0.01 1000
Pulse Width Figure Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.

AO4405 uses advanced trench technology provide excellent RDS(ON) with

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