Integrated gate protection diodes High cross modulation performance no
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BF988
Integrated gate protection diodes High cross modulation performance noise figure High gain High AGC-range feedback capacitance input capacitance
Electrostatic sensitive device. Observe precautions handling.
13625
Applications
Input- mixer stages especially VHF- UHFtuners.
Mechanical Data
Case: TO-50 Plastic case Weight: approx. Marking: BF988 Pinning: Drain, Source, Gate Gate
Parts Table
Part BF988 BF988A BF988B Ordering Ccode BF988A BF988B BF988A BF988B BF988 BF988 BF988 Marking TO50 TO50 TO50 Package
Absolute Maximum Ratings
Tamb unless otherwise specified Parameter Drain source voltage Drain current Gate 1/Gate source peak current Total power dissipation Channel temperature Storage temperature range Tamb Test condition Symbol IG1/G2SM Ptot Tstg Value Unit
Document Number 85007 Rev. 1.6, 25-Nov-04
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BF988
Vishay Semiconductors Maximum Thermal Resistance
Parameter Channel ambient
VISHAY
Test condition
Symbol RthChA
Value
Unit
glass fibre printed board 1.5) plated with
Electrical Characteristics
Tamb unless otherwise specified Parameter Drain source breakdown voltage Gate source breakdown voltage Gate source breakdown voltage Test condition VG1S VG2S IG1S VG2S IG2S VG1S Part Symbol V(BR)DS V(BR)G1SS V(BR)G2SS IG1SS IG2SS BF988 BF988A BF988B Gate source cut-off voltage Gate source cut-off voltage VG2S VG1S IDSS IDSS IDSS VG1S(OFF) VG2S(OFF) 10.5 Typ. Unit
Gate source leakage current VG1S VG2S Gate source leakage current VG2S VG1S Drain current VG1S VG2S
Electrical Characteristics
Tamb unless otherwise specified VG2S Parameter Forward transadmittance Gate input capacitance Gate input capacitance Feedback capacitance Output capacitance Power gain range Noise figure VG2S VG1S VG2S Test condition Symbol |y21s| Cissg1 Cissg2 Crss Coss 16.5 Typ. 1.05 Unit
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Document Number 85007 Rev. 1.6, 25-Nov-04
VISHAY
BF988
Common Emitter S-Parameters
VG2S Tamb unless otherwise specified ID/mA f/MHz 1000 1100 1200 1300 1000 1100 1200 1300 3000 1000 1100 1200 1300 -0.02 -0.10 -0.31 -0.56 -0.87 -1.26 -1.59 -2.04 -2.42 -2.88 -3.39 -3.94 -4.46 -0.02 -0.11 -0.35 -0.62 -0.97 -1.39 -1.76 -2.25 -2.67 -3.16 -3.72 -4.30 -4.87 -0.01 -0.13 -0.37 -0.66 -1.02 -1.47 -1.85 -2.36 -2.80 -3.30 3.89 -4.49 -5.06 -7.8 -15.3 -22.8 -30.2 -37.3 -44.3 -50.9 -58.0 -64.4 -71.4 -78.3 -85.2 -91.8 -8.3 -16.1 -24.0 -31.6 -39.2 -46.4 -53.2 -60.3 -67.1 -74.1 -81.1 -88.0 -94.4 -8.4 -16.4 -24.5 -32.3 -39.8 -47.0 -54.1 -61.3 -67.9 -75.0 -82.0 -88.8 -95.2 6.01 5.87 5.69 5.42 5.17 4.85 4.54 4.25 4.02 3.78 3.42 3.21 3.01 7.84 7.70 7.49 7.21 6.93 6.59 6.27 5.97 5.71 5.46 5.07 4.85 4.63 8.62 8.46 8.26 7.96 7.66 7.33 6.98 6.68 6.42 6.15 5.75 5.52 5.30 168.4 156.3 144.2 132.9 121.5 110.6 100.4 90.2 80.6 70.8 60.5 51.6 42.0 168.5 156.6 144.8 133.6 122.5 111.9 101.9 92.1 82.8 73.3 63.3 54.6 45.4 168.6 156.8 145.2 134.0 122.9 112.3 102.6 92.8 83.7 74.3 64.6 56.0 46.9 -56.27 -50.61 -47.70 -46.19 -45.46 -45.84 -47.31 -48.19 -50.37 -49.48 47.92 -44.65 -41.76 -55.67 -50.01 -47.20 -45.60 -44.88 -45.25 -46.51 -47.19 -49.28 -48.99 -48.03 -45.15 -42.46 -55.26 -49.61 -46.70 -45.10 -44.38 -44.65 -45.72 -46.29 -48.18 -48.49 -47.93 -45.75 -43.05 83.0 76.6 70.9 65.6 60.6 55.4 58.6 63.3 81.5 115.6 131.7 153.0 159.8 83.0 76.4 70.3 65.1 60.0 54.5 57.4 61.4 76.0 107.1 123.3 147.6 157.6 83.0 76.3 70.3 64.9 59.7 54.3 57.0 60.0 71.9 98.7 114.8 141.2 153.4 -0.02 -0.06 -0.13 -0.20 -0.28 -0.36 -0.43 -0.49 -0.52 -0.54 -0.66 -0.66 -0.66 -0.04 -0.09 -0.16 -0.23 -0.31 -0.42 -0.48 -0.55 -0.58 -0.60 -0.73 -0.73 -0.73 -0.07 -0.12 -0.20 -0.27 -0.36 -0.47 -0.53 -0.61 -0.64 -0.66 -0.77 -0.79 -0.79 -3.6 -7.3 -10.6 -14.2 -17.5 20.5 -23.8 -26.8 -30.2 -33.4 -36.8 -40.1 -43.9 -3.7 -7.4 -10.8 -14.3 17.9 -20.9 -24.1 -27.3 -30.6 -33.8 -37.2 -40.6 -44.3 -3.7 -7.5 -11.0 -14.4 -18.0 -20.9 -24.2 -27.4 -30.6 -33.9 -37.3 -40.8 -44.5
Document Number 85007 Rev. 1.6, 25-Nov-04
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BF988
Vishay Semiconductors Typical Characteristics (Tamb unless otherwise specified)
Drain Current
VISHAY
Ptot -Total Power Dissipation
Tamb Ambient Temperature
-0.6 -0.2 Gate Source Voltage
12159
12817
Figure Total Power Dissipation Ambient Temperature
Figure Drain Current Gate Source Voltage
Drain Current
Cissg1 Gate Input Capacitance
-2.0 -1.5 -1.0 -0.5 Gate Source Voltage
-0.2 -0.4 Drain Source Voltage
12812
12813
Figure Drain Current Drain Source Voltage
Figure Gate Input Capacitance Gate Source Voltage
Drain Current
Cissg2 Gate Input Capacitance
-0.8
12816
-0.4
Gate Source Voltage
12814
Gate Source Voltage
Figure Drain Current Gate Source Voltage
Figure Gate Input Capacitance Gate Source Voltage
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Document Number 85007 Rev. 1.6, 25-Nov-04
VISHAY
BF988
Coss Output Capacitance
12820
1300
1000 100.1300
12815
Drain Source Voltage
(y11)
Figure Output Capacitance Drain Source Voltage
Figure Short Circuit Input Admittance
Transducer Gain
-0.2
1300
12821
100.1300
1000
-0.4 -1.0 -0.8
-0.5
12818
Gate Source Voltage
(y21)
Figure Transducer Gain Gate Source Voltage
Figure Short Circuit Forward Transfer Admittance
y21s Forward Transadmittance
12822
1300
1000 0.25 100.1300 1.25 1.50
0.00
12819
Drain Current
0.50 0.75 1.00 (y22)
Figure Forward Transadmittance Drain Current
Figure Short Circuit Output Admittance
Document Number 85007 Rev. 1.6, 25-Nov-04
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BF988
VG2S
j0.5 j0.2 -j0.2 1300 1000 -j0.5
12960
VISHAY
1000 1300
-150°
-30°
12962
-120
Figure Input Reflection Coefficient
Figure Forward Transmission Coefficient
j0.5 1000 0.04 0.08 1300 j0.2
1300
-j0.2 -150 -30° -j0.5
12961
-120
-60°
12963
Figure Reverse Transmission Coefficient
Figure Output Reflection Coefficient
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Document Number 85007 Rev. 1.6, 25-Nov-04
VISHAY
Package Dimensions
BF988
12242
Document Number 85007 Rev. 1.6, 25-Nov-04
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BF988
Vishay Semiconductors Ozone Depleting Substances Policy Statement
policy Vishay Semiconductor GmbH Meet present future national international statutory requirements.
VISHAY
Regularly continuously improve performance products, processes, distribution operatingsystems with respect their impact health safety employees public, well their impact environment. particular concern control eliminate releases those substances into atmosphere which known ozone depleting substances (ODSs). Montreal Protocol (1987) London Amendments (1990) intend severely restrict ODSs forbid their within next years. Various national international initiatives pressing earlier these substances. Vishay Semiconductor GmbH been able policy continuous improvements eliminate ODSs listed following documents. Annex list transitional substances Montreal Protocol London Amendments respectively Class ozone depleting substances Clean Amendments 1990 Environmental Protection Agency (EPA) Council Decision 88/540/EEC 91/690/EEC Annex (transitional substances) respectively. Vishay Semiconductor GmbH certify that semiconductors manufactured with ozone depleting substances contain such substances.
reserve right make changes improve technical design without further notice. Parameters vary different applications. operating parameters must validated each customer application customer. Should buyer Vishay Semiconductors products unintended unauthorized application, buyer shall indemnify Vishay Semiconductors against claims, costs, damages, expenses, arising directly indirectly, claim personal damage, injury death associated with such unintended unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: (0)7131 2831, number: (0)7131 2423
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Document Number 85007 Rev. 1.6, 25-Nov-04
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