Single Chip 700V Sense Power Switch Precision Fixed Operating Frequenc
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FSD210B, FSD200B
Single Chip 700V Sense Power Switch Precision Fixed Operating Frequency (134kHz) Advanced Burst-Mode operation Consumes under 0.1W 265Vac load (FSD210B only) Internal Start-up Switch Soft Start Under Voltage Lock (UVLO) with Hysteresis Pulse Pulse Current Limit Over Load Protection (OLP) Internal Thermal Shutdown Function (TSD) Auto-Restart Mode Frequency Modulation FSD200B does require auxiliary bias winding
Green Mode Fairchild Power Switch (FPSTM)
OUTPUT POWER TABLE
230VAC ±15%(3) PRODUCT FSD210B FSD200B FSD210BM FSD200BM 85-265VAC Open Open Adapter(1) Adapter(1) Frame(2) Frame(2)
Applications
Charger Adaptor Mobile Phone, Auxiliary Power White Goods, C-TV Monitor
Table Notes: Typical continuous power non-ventilated enclosed adapter measured 50°C ambient. Maximum practical continuous power open frame design 50°C ambient. 100/115 with doubler.
Typical Circuit
Description
FSD200B FSD210B integrated Pulse Width Modulators (PWM) Sense FETs specially designed high performance off-line Switch Mode Power Supplies (SMPS) with minimal external components. Both devices monolithic high voltage power switching regulators which combine LDMOS Sense with voltage mode control block. integrated controller features include: fixed oscillator with frequency modulation reduced EMI, Under Voltage Lock (UVLO) protection, Leading Edge Blanking (LEB), optimized gate turn-on/turnoff driver, thermal shut down protection (TSD), temperature compensated precision current sources loop compensation fault protection circuitry. When compared discrete MOSFET controller switching converter solution, FSD200B FSD210B reduce total component count, design size, weight same time increase efficiency, productivity, system reliability. FSD200B eliminates need auxiliary bias winding small cost increased supply power. Both devices basic platform well suited cost effective designs flyback converters.
Vstr
Drain
Source
Figure Typical Flyback Application using FSD210B
Vstr
Drain
Source
Figure Typical Flyback Application using FSD200B
Rev.1.0.0
©2004 Fairchild Semiconductor Corporation
FSD210B, FSD200B
Internal Block Diagram
Vstr
UVLO Voltage Internal Bias 8.7/6.7V Frequency Modulation
250uA
Drain
DRIVER SFET
BURST
BURST Reset
Iover
Rsense
Figure Functional Block Diagram FSD210B
Vstr
HV/REG UVLO Voltage Ref.
INTERNAL BIAS ON/OFF
Drain
Frequency Modulation
250uA
DRIVER SFET
BURST
BURST
Reset
Iover
Rsense
Figure Functional Block Diagram FSD200B showing internal high voltage regulator
FSD210B, FSD200B
Definitions
Number Name Function Description Sense source terminal primary side internal control ground. feedback voltage inverting input comparator with nominal input levels between 0.5Vand 2.5V. 0.25mA current source connected internally while capacitor opto coupler typically connected externally. feedback voltage 4.5V triggers overload protection(OLP). There time delay while charging between 4.5V using internal current source, which prevents false triggering under transient conditions still allows protection mechanism operate under true overload conditions. FSD210B Positive supply voltage input. Although connected auxiliary transformer winding, current supplied from (Vstr) internal switch during startup (see Internal Block Diagram section). until reaches UVLO upper threshold (8.7V) that internal start-up switch opens device power supplied auxiliary transformer winding. FSD200B This connected storage capacitor. high voltage regulator connected between (Vstr) this pin, provides supply voltage FSD200B startup when switching during normal operation. FSD200B eliminates need auxiliary bias winding associated external components. Drain designed connect directly primary lead transformer capable switching maximum 700V. Minimizing length trace connecting this transformer will decrease leakage inductance. startup connects directly rectified line voltage source both FSD200B FSD210B. FSD210B, start internal switch supplies internal bias charges external storage capacitor placed between ground. Once this reaches 8.7V, internal current source disabled. FSD200B, internal high voltage regulator provides constant supply voltage.
Drain
Vstr
Configuration
7-DIP 7-LSOP
Vstr Drain
Figure Configuration (Top View)
FSD210B, FSD200B
Absolute Maximum Ratings
(Ta=25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Startup Voltage (Vstr) Breakdown Maximum Supply Voltage (FSD200B) Maximum Supply Voltage (FSD210B) Input Voltage Range Operating Junction Temperature. Operating Ambient Temperature Storage Temperature Range Symbol BVDSS BVSTR VCC,MAX VCC,MAX TSTG Value -0.3 VSTOP Internally limited +150 Unit
Thermal Impedance
Parameter 7DIP Junction-to-Ambient Thermal Junction-to-Case Thermal 7LSOP Junction-to-Ambient Thermal Junction-to-Case Thermal
Note: Free standing without heat sink. Measured close plastic interface. copper clad.
Symbol
Value 88.04(3) 24.01 85.53(3)
Unit °C/W °C/W °C/W °C/W
JA(1) JC(2) JA(1) JC(2)
FSD210B, FSD200B
Electrical Characteristics
(Ta=25°C unless otherwise specified) Parameter Sense SECTION Off-State Current On-State Resistance Rise Time Fall Time CONTROL SECTION Output Frequency Output Frequency Modulation Feedback Source Current Maximum Duty Cycle Minimum Duty Cycle UVLO Threshold Voltage (FSD200B) UVLO Threshold Voltage (FSD210B) Supply Shunt Regulator (FSD200B) Internal Soft Start Time BURST MODE SECTION VBURH Burst Mode Voltage PROTECTION SECTION Drain Source Peak Current Limit(1) Current Limit Delay(2) Thermal Shutdown Temperature (Tj)(2) Shutdown Feedback Voltage Feedback Shutdown Delay Current Leading Edge Blanking Time TOTAL DEVICE SECTION Operating Supply Current (FSD200B) Operating Supply Current (FSD210B) Start Current (FSD200B) Start Current (FSD210B) Vstr Supply Voltage ISTART ISTART
Symbol IDSS RDS(ON) FOSC FMOD DMAX DMIN VSTART VSTOP VSTART VSTOP VCCREG TS/S
Condition 560V 25°C, 25mA 100°C, 25mA 325V, 50mA 325V, 25mA 25°C 25°C 3.5V After turn After turn
Min. 0.22 0.58
Typ. 0.25 0.64 0.58 0.320
Max. 0.28 0.64 0.365
Unit
VBURL Hysteresis IOVER TCLD IDELAY TLEB
25°C
0.275
25°C 4.0V
Note: Test current slope di/dt 150mA/us These parameters, although guaranteed, 100% tested production This parameter derived from characterization
FSD210B, FSD200B
Comparison Between FSDH565 FSD210B
Function Soft-Start FSDH0565 applicable FSD210B FSD210B Advantages Gradually increasing current limit during soft-start further reduces peak current voltage component stresses Eliminates external components used soft-start most applications Reduces eliminates output overshoot Smaller transformer Reduced conducted Improve light load efficiency Reduces no-load consumption Transformer audible noise reduction Greater immunity acting result build-up dust, debris other contaminants
Switching Frequency Frequency Modulation Burst Mode Operation
100kHz applicable applicable
134kHz ±4kHz Yes-built into controller 3.56mm 3.56mm LSOP
Drain Creepage Package
1.02mm
FSD210B, FSD200B
Typical Performance Characteristics
(These characteristic graphs normalized Ta=25)
Operating Current Fosc (kHz) Junction Temperature
Junction Temperature
Frequency Temp
Operating Current Temp
Peak Current Limit Junction Temperature Feedback SOurce Current
Junction Temperature
Peak Current Limit Temp
Feedback Source Current Temp
1.20 1.00 Vstart Vstop 0.80 0.60 0.40 0.20 0.00 Junction Temperature
1.20 1.00 0.80 0.60 0.40 0.20 0.00 Junction Temperature
Vstart Voltage Temp
Vstop Voltage Temp
FSD210B, FSD200B
Typical Performance Characteristics (Continued)
(These characteristic graphs normalized Ta=25)
State Resistance Junction Temperature BVdss
Junction Temperature
State Resistance Temp
Breakdown Voltage Temp
Regulation Voltage
Junction Temperature
Junction Temperature
Regulation Voltage Temp (for FSD200B)
Shutdown Feedback Voltage Temp
Istart Junction Temperature Istart
Junction Temperature
Start Current Temp (for FSD210B)
Start Current Temp (for FSD200B)
FSD210B, FSD200B
Functional Description
Startup startup, internal high voltage current source supplies internal bias charges external capacitor shown figure case FSD210B, when reaches 8.7V device starts switching internal high voltage current source disabled (see figure device continues switch provided that does drop below 6.7V. FSD210B, after startup, bias supplied from auxiliary transformer winding. case FSD200B, continuously supplied from external high voltage source regulated internal high voltage regulator (HVReg), thus eliminating need auxiliary winding (see figure
Vin,dc Istr
Istr-max 100uA 100uA
Vstr J-FET
UVLO Vref
FSD2xx
Vin,dc Istr
Vin,dc Istr
UVLO start must drop UVLO stop
Vstr Reg.
Vstr
UVLO stop Auxiliary winding voltage
8.7V/ 6.7V
FSD210B
FSD200B
Figure Internal startup circuit
Figure Charging capacitor through Vstr
Calculating capacitor important step designing FSD200B/210B. initial start-up both FSD200B/210B, stand-by maximum current 100uA, supplying current UVLO Vref Block. charging current capacitor equal Istr 100uA. After reaches UVLO start voltage only bias winding supplies current device. When bias winding voltage sufficient, level decreases UVLO stop voltage. this time oscillates. order prevent this ripple recommended that capacitor sized between 10uF 47uF.
Leading edge blanking (LEB) instant internal Sense turned there usually exists high current spike through Sense FET, caused primary side capacitance secondary side rectifier diode reverse recovery. Exceeding pulse-by-pulse current limit could cause premature termination switching pulse (see Protection Section). counter this effect, employs leading edge blanking (LEB) circuit. This circuit inhibits over current comparator short time (TLEB) after Sense turned
Feedback Control FSD200B/210B both voltage mode devices shown Figure Usually, H11A817 optocoupler KA431 voltage reference FOD2741 integrated optocoupler voltage reference) used implement isolated secondary feedback network. feedback voltage compared with internally generated sawtooth waveform, directly controlling duty cycle. When KA431 reference voltage exceeds internal reference voltage 2.5V, optocoupler current increases pulling down feedback voltage reducing duty cycle. This event will occur when either input voltage increases output load decreases.
Vref 0.25mA Gate driver
KA431
Figure feedback circuit
Protection Circuit FSD200B/210B self protection functions: over load protection (OLP) thermal shutdown (TSD). Because these protection circuits fully integrated into with external components, system
FSD210B, FSD200B
reliability improved without cost increase. either these thresholds triggered, starts auto-restart cycle. Once fault condition occurs, switching terminated Sense remains off. This causes fall. When reaches UVLO stop voltage (6.7V:FSD210B, 6V:FSD200B), protection reset internal high voltage current source charges capacitor. When reaches UVLO start voltage (8.7V:FSD210B,7V:FSD200B), device attempts resume normal operation. fault condition longer present start will successful. still present cycle repeated (see figure 10).
Thermal Shutdown (TSD) Sense control integrated, making easier control detect temperature Sense FET. When temperature exceeds approximately 145°C, thermal shutdown activated.
under Vstop UVLO
4.5V
Switching Area
Idelay charges Reset
250uA
GATE DRIVER
RESET
4.5V
FSD2xxB OLP, Protection Block
t1<<t2,
Figure Protection block
Figure Over load protection delay
Over Load Protection (OLP) Over load protection occurs when load current exceeds pre-set level abnormal situation. this occurs, protection circuit should triggered protect SMPS. possible that short term load transient occur under normal operation. order avoid false shutdowns, over load protection circuit designed trigger after delay. Therefore device differentiate between transient over loads true fault conditions. maximum input power limited using pulse-by-pulse current limit feature. load tries draw more than this, output voltage will drop below value. This reduces optocoupler current which turn reduces photo-transistor current (see figure Therefore, 250uA current source will charge feedback capacitor, Cfb, feedback voltage, Vfb, will increase. input voltage feedback comparator(Vfb) only charged from delay current source after feedback current charge feedback capacitor more. Once feedback charged from feedback current more, device switches maximum drain current, 250uA current source blocked source continues charge Cfb. once reaches OLP(4.5V), switching stops.and overload protection triggered. resultant shutdown delay time, dependent feedback capacitor feedback delay current, Fig.
Soft Start FSD200B/210B internal soft start circuit that gradually increases current through Sense shown figure soft start time 3msec FSD200B/210B.
I(A)
0.3A
Iover
0.25A 0.2A
FSD200B/210B
Figure Internal Soft Start
Burst operation order minimize power dissipation standby mode, FSD200B/210B implements burst mode functionality (see figure 12). load decreases, feedback voltage decreases. shown figure device automatically enters burst mode when feedback voltage drops below VBURL(0.58V). this point switching stops output voltages start drop rate dependant standby current load. This causes feedback voltage rise. Once passes VBURH(0.64V) switching starts again. feedback voltage falls process repeats. Burst
FSD210B, FSD200B
mode operation alternately enables disables switching power Sense thereby reducing switching loss standby mode.
Internal Oscillator
138kHz
GATE DRIVER
250uA
Drain Source voltage
on/off
0.64V /0.58V
FSD2xx Burst Operation Block
Drain Source current
Waveform 130kHz 8kHz
Figure Circuit burst operation
134kHz 138kHz Turn-on Turn-off point
Voset
Figure Frequency Modulation Waveforms
CISPR22Q(PK) CISPR22A(AV)
0.64V 0.58V
Amplitude(dBµV)
time
Frequency(MHz)
Figure FSDH0165 Full Range scan(100kHz, Frequency Modulation) with charger
Figure Burst mode operation
Frequency Modulation reduction accomplished modulating switching frequency SMPS. Frequency modulation reduce spreading energy over wider frequency range. amount reduction directly related level modulation (Fmod) rate modulation. seen Figure frequency changes from 130kHz 138kHz FSD200B/FSD210B. Frequency modulation allows cost effective inductor instead input mode choke satisfy requirements world wide limits.
CISPR22Q(PK)
CISPR22A(AV)
Amplitude(dBµV)
Frequency(MHz)
Figure FSD210B Full Range scan(134kHz, with Frequency Modulation) with charger
FSD210B, FSD200B
Typical application circuit
Application Cellular Phone Charger Output power 3.38W Input voltage Universal input (85-265Vac) Output voltage (Max current) 5.2V (650mA)
High efficiency (>67% Universal Input) zero load power consumption (<100mW 240Vac) with FSD210B component count Enhanced system reliability through various protection functions Internal soft-start (3ms) Frequency Modulation
Design Notes
constant voltage (CV) mode control implemented with resistors, R11, shunt regulator, feedback capacitor, opto-coupler, constant current (CC) mode control designed with resistors, R15, R16, R19, transistor, NTC, TH1. When voltage across current sensing resistors, R15,R16 0.7V, transistor turns current through opto coupler increases. This reduces feedback voltage duty ratio. Therefore, output voltage decreases output current regulated. NTC(negative thermal coefficient) used compensate temperature characteristics transistor
Schematic
152M-Y, 250Vac
4.7M 1/4W 4.7M, 1/4W 330uH Fuse 1N4007 1N4007 1N4007 1N4007 4.7UF 400V 4.7uF 400V 4.7k 102k SB260
330uF 510R H11A817B 470nF
(5.2V/0.65A)
2.2k 330uF
UF4007 4.7uF TL431
Drain
H11A817B
KSP2222A
FSD210
1N4148 33uF 510R
Vstr
FSD21x
100nF
FSD210B, FSD200B
Demo Circuit Part List
Reference D1,D2,D3,D4 Part 1N4007 UF4007 1N4148 SB260 KSP2222A FSD210 (FSD200) KA431AZ H11A817A Quantity Description 1A/1000V Junction Rectifier 1A/1000V Ultra Fast Diode 10mA/100V Junction Diode 2A/60V Schottky Diode Ic=600mA, Vce=30V 0.5A/700V Vref=2.495V(Typ.) 80~160% Requirement/Comment DO41 Type DO41 Type D0-213 Type D0-41 Type TO-92 Type Iover=0.3A, Fairchildsemi TO-92 Type, LM431
Transformer Schematic Diagram
CORE EE1616 BOBBIN EE1616(H)
Winding Specification
Wire 0.16 0.16
Turns
Winding Method SOLENOID WINDING CENTER SOLENOID WINDING SOLENOID WINDING SOLENOID WINDING
INSULATION POLYESTER TAPE t=0.025mm 10mm,
INSULATION POLYESTER TAPE t=0.025mm 10mm, open 0.16 0.40 INSULATION POLYESTER TAPE t=0.025mm 10mm, INSULATION POLYESTER TAPE t=0.025mm 10mm,
Electrical Characteristics
ITEM INDUCTANCE LEAKAGE
TERM INAL
SPECIFICATION SPECIFICAT 1.6mH 50uH
ARKS 1kHz, 3,4,7,8 short 100kHz,
FSD210B, FSD200B
Typical application circuit
Application Isolation Buck Output power 1.2W Input voltage Universal input (100 375Vac) Output voltage (Max current) (100mA)
isolation buck converter component count Enhanced system reliability through various protection functions
Design Notes
output voltage(12V) regulated with resistors, zener diode, transistor, capacitor, While FSD210B diodes, this time output voltage, 12V, sensed feedback components above. This output also used with bias voltage FSD210B. 680K, prevent OLP(over load protection) startup. 8.2K, dummy resistor regulate output voltage light load. Schematic
VINDC D3(ZD) 1N759A 680K UF4004 1000uF 8.2K 47nF/50V KSP2222A VOUT(12V/100mA) UF4004 Drain Vstr
FSD21x 4.7uF/400V
47uF
Demo Circuit Part List
Reference D1,D2 D1,D2, Part UF4007 KSP2222A 1N759A FSD210 Quantity Description 1A/1000V Ultra Fast Diode Ic=200mA, Vcc=40V 12VZD/0.5W 0.5A/700V Requirement/Comment DO41 Type TO-92 Type DO-35 Type Iover=0.3A
FSD210B, FSD200B
Layout Considerations (for Flyback Convertor)
Copper area heatsink
N.C. Drain Vstr
Figure Layout Considerations FSD2x0B using 7DIP
FSD210B, FSD200B
Package Dimensions
7-DIP
FSD210B, FSD200B
Package Dimensions (Continued)
7-LSOP
FSD210B, FSD200B
Ordering Information
Product Number FSD210B FSD200B FSD210BM FSD200BM Package 7DIP 7DIP 7LSOP 7LSOP Rating 700V, 0.5A 700V, 0.5A 700V, 0.5A 700V, 0.5A Marking Code FSD210 FSD200 FSD210 FSD200 Topr (°C) -25°C +85°C -25°C +85°C -25°C +85°C -25°C +85°C
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL PRESIDENT FAIRCHILD SEMICONDUCTOR CORPORATION. used herein:
Life support devices systems devices systems which, intended surgical implant into body, support sustain life, whose failure perform when properly used accordance with instructions provided labeling, reasonably expected result significant injury user.
critical component component life support device system whose failure perform reasonably expected cause failure life support device system, affect safety effectiveness.
12/16/04 0.0m 2004 Fairchild Semiconductor Corporation
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