Simple Gate Drive Rating (Per MIL-STD-883D) Small Package Outline (SOT

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Simple Gate Drive Rating (Per MIL-STD-883D) Small Package Outline (SOT

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AF1332N
Simple Gate Drive Rating (Per MIL-STD-883D) Small Package Outline (SOT323)
advanced power MOSFET provides designer with best combination fast switching, on-resistance cost-effectiveness.
Product Summary
BVDSS (on) 600m. 600mA
Assignments
(Top View)
Descriptions
Name Description Gate Source Drain
Ordering information
1332N Feature :MOSFET Package SOT323 Lead Free Blank Normal Lead Free Package Packing Blank Tube Bulk Tape Reel
Block Diagram
This datasheet contains product information. Anachip Corp. reserves rights modify product specification without notice. liability assumed result this product. rights under patent accompany sale product.
Rev. 2004
AF1332N
N-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings
Symbol TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note Pulsed Drain Current (Note Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Rating 0.35 0.003 +150 +150 Unit W/oC
Thermal Data
Symbol Rthj-a Parameter Thermal Resistance Junction-Ambient (Note Max. Value Unit
Electrical Characteristics TA=25oC (unless otherwise specified)
Symbol BVDSS BVDSS RDS(ON) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (TJ=25oC) Drain-Source Leakage Current (TJ=70oC) Gate-Source Leakage Total Gate Charge (Note Gate-Source Charge Gate-Drain ("Miller") Charge Turn-On Delay Time (Note Rise Time Turn-Off Delay Time Fall-Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS=0V, ID=250uA Reference 25oC, ID=1mA VGS=4.5V, ID=600mA VGS=2.5V, ID=400mA VDS=VGS, ID=250uA VDS=5V, ID=600mA VDS=20V, VGS=0V VDS=16V, VGS=0V VGS=±6V ID=600mA, VDS=16V, VGS=4.5V VDS=10V, ID=600mA, RG=3.3, VGS=5V RD=16.7 VGS=0V, VDS=10V, f=1.0MHz Min. Limits Typ. 0.02 Max. Unit
Source-Drain Diode
Symbol Parameter Forward Voltage (Note Test Conditions IS=300mA, VGS=0V Min. Typ. Max. Unit
Note Surface mounted board, sec. Note Pulse width limited Max. junction temperature. Note Pulse width 300us, duty cycle
Anachip Corp. www.anachip.com.tw
Rev.
2004
AF1332N
N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics
Typical Output Characteristics
Typical Output Characteristics
On-Resistance v.s. Gate Voltage
Normalized On-Resistance v.s. Junction Temperature
Forward Characteristic Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
Anachip Corp. www.anachip.com.tw
Rev.
2004
AF1332N
N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics (Continued)
Gate Charge Characteristics
Typical capacitance Characteristics
Maximum Safe Operating Area
Effective Transient Thermal Impedance
Switching Time Waveform
Gate Charge Waveform
Anachip Corp. www.anachip.com.tw
Rev.
2004
AF1332N
N-Channel Enhancement Mode Power MOSFET Marking Information
(Top View) SOT323
Part Number: AF1332N A~Z: Week: 27~52 A~Z: Week: 01~26 Year: years cycle 2004, 2008, 2012. 2005, 2009, 2013. 2006, 2010, 2014. 2007, 2011, 2015.
Package Information
Package Type: SOT323
*Dimension does include mold protrusions.
Symbol
Dimensions Millimeters Min. 0.90 0.03 1.90 0.20 2.00 1.15 Nom. 1.00 0.07 2.00 0.30 2.10 1.25 1.30 Bsc. Max. 1.10 0.10 2.10 0.40 2.20 1.35
Dimensions Inches Min. 0.035 0.001 0.075 0.008 0.079 0.045 Nom. 0.039 0.003 0.079 0.012 0.083 0.049 0.051 Bsc. Max. 0.043 0.004 0.083 0.016 0.087 0.053
Anachip Corp. www.anachip.com.tw
Rev.
2004

Simple Gate Drive Rating (Per MIL-STD-883D) Small Package Outline (SOT

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