high speed switching. Diffused-junction. Glass passivated encapsulated

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high speed switching. Diffused-junction. Glass passivated encapsulated

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DFG1E
high speed switching. Diffused-junction. Glass passivated encapsulated.
OUTLINE DRAWING
(0.14)
Unit mm(inch)
Direction polarity
(0.03)
62MIN. (2.44)
5MAX (0.2)
DFG1E6 (600V) DFG1E8 (800V) DFG1E10 (1000V)
Green Yellow
Weight: 0.35
ABSOLUTE MAXIMUM RATINGS
Items
Repetitive Peak Reverse Voltage Average Forward Current Surge(Non-Repetitive) Forward Current Limit Value Operating Junction Temperature Storage Temperature VRRM IF(AV) IFSM Tstg
Type
DFG1E6
DFG1E8
29MIN. (1.14)
Type
Color cathode band
DFG1E10
1000
Single-phase half sine wave 180° conduction 100°C, Lead length 10mm
Without PIV, 10ms conduction, 150°C start 0.1( Time 10ms, value +150 +150
Notes
Lead mounting Lead temperature 300°C max. 3.2mm from body 5sec. max. Mechanical strength Bending cycles cycle, Tensile 2kg, Twist cycle.
CHARACTERISTICS(TL=25°C)
Items
Peak Reverse Current Peak Forward Voltage Reverse Recovery Time Steady State Thermal Impedance
Symbols
IRRM Rth(j-a) Rth(j-l)
Units
°C/W
Min.
Typ.
Max.
Test Conditions
Rated VRRM IFM=0.3 Single-phase half sine wave cycle IF=0.1A, Irp=0.2A, Recovery Lead length
PDE-DFG1E-0
Symbol(Purple)
Cathode band
29MIN. (1.14)
DFG1E
Forward characteristics
Single-phase half sine wave Conduction 10ms Cycle TL=150°C TL=25°C
Max. average forward power dissipation (Resistive inductive load)
MAX. AVERAGE FORWARD POWER DISSIPATION
PEAK FORWARD CURRENT
Single-phase 50Hz
0.01
PEAK FORWARD VOLTAGE DROP
AVERAGE FORWARD CURRENT
Max. allowable ambient temperature (Resistive inductive load)
MAX. ALLOWABLE AMBIENT TEMPERATURE (°C)
Single-phase half sine wave 180° conduction (50Hz)
Max. allowable lead temperature (Resistive inductive load)
MAX. ALLOWABLE LEAD TEMPERATURE (°C)
Single-phase half sine wave 180° conduction (50Hz)
Lead temp board (100x180x1.6t) Copper foil 5.5)
board (100x180x1.6t) Copper foil 5.5)
AVERAGE FORWARD CURRENT
AVERAGE FORWARD CURRENT
Surge forward current characteristic Non-repetitive
Surge current peak value
Steady state thermal impedance
STEADY STATE THERMAL IMPEDANCE (°C/W)
SURGE FORWARD CURRENT
10ms cycle
Rth(j
Ambient temp. measured point Lead temp. Lead measured point length (0.5 thermocouple) Copper foil 5.5)
Lead length
Rth(j
Without
board
CYCLES
LEAD LENGTH (mm)
PDE-DFG1E-0
DFG1E
Transient thermal impedance
Lead length
Reverse recovery time (trr) test circuit
D.U.T 22µs 220µs SCOPE
TRANSIENT THERMAL IMPEDANCE (°C/W)
Rth(j
Rth(j
(approx.)
IF=0.1A 0.25 Irp=0.2A
Note board mounted board( 1.6t) Copper foil 0.001 0.01 TIME
PDE-DFG1E-0
HITACHI POWER SEMICONDUCTORS Notices
1.The information given herein, including specifications dimensions, subject change without prior notice improve product characteristics. Before ordering, purchasers adviced contact Hitachi sales department latest version this data sheets. 2.Please sure read "Precautions Safe Notices" individual brochure before use. 3.In cases where extremely high reliability required(such nuclear power control, aerospace aviation, traffic equipment, life-support-related medical equipment, fuel control equipment various kinds safety equipment), safety should ensured using semiconductor devices that feature assured safety means users' fail-safe precautions other arrangement. consult Hitachi's sales department staff. 4.In event shall Hitachi liable damages that result from accident other cause during operation user's units according this data sheets. Hitachi assumes responsibility intellectual property claims other problems that result from applications information, products circuits described this data sheets. 5.In event shall Hitachi liable failure semiconductor device secondary damage resulting from value exceeding absolute maximum rating. 6.No license granted this data sheets under patents other rights third party Hitachi, Ltd. 7.This data sheets reproduced duplicated, form, whole part without expressed written permission Hitachi, Ltd. 8.The products (technologies) described this data sheets provided party whose purpose their application will hinder maintenance international peace safety they applied that purpose their direct purchasers third party. When exporting these products (technologies), necessary procedures taken accordance with related laws regulations.
inquiries relating products, please contact nearest overseas representatives which located "Inquiry" portion page home page. Hitachi power semiconductor home page address http://www.hitachi.co.jp/pse

high speed switching. Diffused-junction. Glass passivated encapsulated

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