Integrated gate protection diodes High cross modulation performance no

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Integrated gate protection diodes High cross modulation performance no

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BF966S
Integrated gate protection diodes High cross modulation performance noise figure High AGC-range feedback capacitance input capacitance
Applications
Input- mixer stages especially UHF-tuners.
Electrostatic sensitive device. Observe precautions handling.
13625
Mechanical Data
Case: TO-50 Plastic case Weight: approx. Marking: BF966S Pinning: Drain, Source, Gate Gate
Parts Table
Part BF966S BF966SA BF966SB Ordering Ccode BF966SA BF966SB BF966SA BF966SB BF966S BF966S BF966S Marking TO50 TO50 TO50 Package
Absolute Maximum Ratings
Tamb unless otherwise specified Parameter Drain source voltage Drain current Gate 1/Gate source peak current Total power dissipation Channel temperature Storage temperature range Tamb Test condition Symbol IG1/G2SM Ptot Tstg Value Unit
Maximum Thermal Resistance
Parameter Channel ambient
Test condition
Symbol RthChA
Value
Unit
glass fibre printed board 1.5) plated with www.vishay.com
Document Number 85004 Rev. 1.5, 25-Nov-04
BF966S
VISHAY
Electrical Characteristics
Tamb unless otherwise specified Parameter Drain source breakdown voltage Gate source breakdown voltage Gate source breakdown voltage Test condition VG1S VG2S IG1S VG2S IG2S VG1S Part Symbol V(BR)DS V(BR)G1SS V(BR)G2SS IG1SS IG2SS IDSS IDSS IDSS -VG1S(OFF) -VG2S(OFF) BF966SA BF966SB Gate source cut-off voltage Gate source cut-off voltage VG2S VG1S 10.5 Typ. Unit
Gate source leakage current VG1S VG2S Gate source leakage current VG2S VG1S Drain current VG1S VG2S BF966S
Electrical Characteristics
Tamb unless otherwise specified VG2S Parameter Forward transadmittance Gate input capacitance Gate input capacitance Feedback capacitance Output capacitance Power gain range Noise figure VG2S VG1S VG2S Test condition Symbol y21s Cissg1 Cissg2 Crss Coss Typ. 18.5 Unit
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Document Number 85004 Rev. 1.5, 25-Nov-04
VISHAY
Typical Characteristics (Tamb unless otherwise specified)
12159
BF966S
Ptot -Total Power Dissipation
Drain Current
Gate Source Voltage
12764
Tamb Ambient Temperature
Figure Total Power Dissipation Ambient Temperature
Figure Drain Current Gate Source Voltage
Drain Current
Cissg1 Gate Input Capacitance
Drain Current VG2S
-0.5
12762
Drain Source Voltage
12765
Figure Drain Current Drain Source Voltage
Figure Gate Input Capacitance Drain Current
Drain Current
Coss Output Capacitance
2.00 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0.00 VG2S
12763
Gate Source Voltage
12766
Drain Source Voltage
Figure Drain Current Gate Source Voltage
Figure Output Capacitance Drain Source Voltage
Document Number 85004 Rev. 1.5, 25-Nov-04
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BF966S
VISHAY
Cissg2 Gate Input Capacitance
Gate Source Voltage
12770
1300 1000 100.1300
12767
(y11)
Figure Gate Input Capacitance Gate Source Voltage
Figure Short Circuit Input Admittance
-Transducer Gain(
-0.5
1300 1000 100.1300
-2.-3 Gate Source Voltage
-0.1
12772
12768
(y12)
Figure Transducer Gain Gate Source Voltage
Figure Short Circuit Reverse Transfer Admittance
Y21S ForwardTransadmittance
100.1300
1000
12771
1300
12769
Drain Current
(y21
Figure Forward Transadmittance Drain Current
Figure Short Circuit Forward Transfer Admittance
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Document Number 85004 Rev. 1.5, 25-Nov-04
VISHAY
BF966S
1300
1000 00.1300
12773
(y22)
Figure Short Circuit Output Admittance
Document Number 85004 Rev. 1.5, 25-Nov-04
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BF966S
VG2S
VISHAY
j0.5
j0.2
1300 1000
0.008 0.016
-j0.2
1300 1000 -j0.5
-150
-120
12924
12925
Figure Input Reflection Coefficient
Figure Reverse Transmission Coefficient
180° 1000
j0.5
j0.2 1300
1300 -j0.5
-150
-30°
-j0.2
-120°
12926
-60°
12927
Figure Forward Transmission Coefficient
Figure Output Reflection Coefficient
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Document Number 85004 Rev. 1.5, 25-Nov-04
VISHAY
Package Dimensions
BF966S
12242
Document Number 85004 Rev. 1.5, 25-Nov-04
www.vishay.com
BF966S
Vishay Semiconductors Ozone Depleting Substances Policy Statement
policy Vishay Semiconductor GmbH Meet present future national international statutory requirements.
VISHAY
Regularly continuously improve performance products, processes, distribution operatingsystems with respect their impact health safety employees public, well their impact environment. particular concern control eliminate releases those substances into atmosphere which known ozone depleting substances (ODSs). Montreal Protocol (1987) London Amendments (1990) intend severely restrict ODSs forbid their within next years. Various national international initiatives pressing earlier these substances. Vishay Semiconductor GmbH been able policy continuous improvements eliminate ODSs listed following documents. Annex list transitional substances Montreal Protocol London Amendments respectively Class ozone depleting substances Clean Amendments 1990 Environmental Protection Agency (EPA) Council Decision 88/540/EEC 91/690/EEC Annex (transitional substances) respectively. Vishay Semiconductor GmbH certify that semiconductors manufactured with ozone depleting substances contain such substances.
reserve right make changes improve technical design without further notice. Parameters vary different applications. operating parameters must validated each customer application customer. Should buyer Vishay Semiconductors products unintended unauthorized application, buyer shall indemnify Vishay Semiconductors against claims, costs, damages, expenses, arising directly indirectly, claim personal damage, injury death associated with such unintended unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: (0)7131 2831, number: (0)7131 2423
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Document Number 85004 Rev. 1.5, 25-Nov-04

Integrated gate protection diodes High cross modulation performance no

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