IRG4BC30KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SO

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IRG4BC30KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SO

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IRG4BC30KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features
High short circuit rating optimized motor control, =10µs, @360V (start), 125°C, Combines conduction losses with high switching speed tighter parameter distribution higher efficiency than previous generations IGBT co-packaged with HEXFREDultrafast, ultrasoft recovery antiparallel diodes Lead-Free
Short Circuit Rated UltraFast IGBT
VCES 600V
VCE(on) typ. 2.21V
@VGE 15V,
n-channel
Latest generation IGBTs offer highest power density motor controls possible HEXFREDdiodes optimized performance with IGBTs. Minimized recovery characteristics reduce noise, switching losses This part replaces IRGBC30KD2 IRGBC30MD2 products hints design 97003
Benefits
TO-220AB
Absolute Maximum Ratings
VCES 25°C 100°C 100°C 25°C 100°C TSTG
Parameter
Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction Storage Temperature Range Soldering Temperature, sec. Mounting Torque, 6-32 Screw.
Max.
+150 (0.063 (1.6mm) from case) lbfin (1.1
Units
Thermal Resistance
Parameter
Junction-to-Case IGBT Junction-to-Case Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
Typ.
0.50 (0.07)
Max.
Units
°C/W
(oz)
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12/23/03
IRG4BC30KDPbF
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ
VCE(on)
VGE(th) VGE(th)/TJ ICES IGES
Parameter Min. Typ. Max. Units Collector-to-Emitter Breakdown Voltage Temperature Coeff. Breakdown Voltage 0.54 V/°C Collector-to-Emitter Saturation Voltage 2.21 2.88 2.36 Gate Threshold Voltage Temperature Coeff. Threshold Voltage mV/°C Forward Transconductance Zero Gate Voltage Collector Current 2500 Diode Forward Voltage Drop Gate-to-Emitter Leakage Current ±100
Conditions 250µA 1.0mA Fig. 16A, 150°C VGE, 250µA VGE, 250µA 100V, 600V 600V, 150°C Fig. 12A, 150°C ±20V
Switching Characteristics 25°C (unless otherwise specified)
d(on) td(off) Eoff d(on) d(off) Cies Coes Cres di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate Emitter Charge (turn-on) Gate Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate Fall Recovery During Min. Typ. Max. Units Conditions 400V Fig.8 25°C 16A, 480V 15V, 0.60 Energy losses include "tail" 0.58 diode reverse recovery 1.18 Fig. 9,10,14 360V, 125°C 15V, VCPK 500V 150°C, Fig. 11,14 16A, 480V 15V, Energy losses include "tail" 1.69 diode reverse recovery Measured from package Fig. 1.0MHz 25°C Fig. 125°C 25°C Fig. 125°C 200V 25°C Fig. 125°C di/dt 200Aµs A/µs 25°C Fig. 125°C
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IRG4BC30KDPbF
both:
LOAD CURRENT
Square wave:
Duty cycle: 125°C Tsink 90°C Gate drive specified
Power Dissipation
rated voltage
Ideal diodes
Frequency (KHz)
Fig. Typical Load Current Frequency
(Load Current IRMS fundamental)
Collector-to-Emitter Current
Collector-to-Emitter Current
20µs PULSE WIDTH
PULSE WIDTH
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
Fig. Typical Output Characteristics
Fig. Typical Transfer Characteristics
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IRG4BC30KDPbF
Collector-to-Emitter Voltage(V)
PULSE WIDTH
Maximum Collector Current(A)
8.0A
Case Temperature
Junction Temperature Junction Temperature °C°)
Fig. Maximum Collector Current Case Temperature
Fig. Typical Collector-to-Emitter Voltage Junction Temperature
Thermal Response thJC
0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJC 0.001 0.01
0.01 0.00001
0.0001
Rectangular Pulse Duration (sec)
Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRG4BC30KDPbF
1500
1200
Gate-to-Emitter Voltage
1MHz Cies SHORTED Cres Coes
400V
Capacitance (pF)
Cies
Coes Cres
Collector-to-Emitter Voltage
Total Gate Charge (nC)
Fig. Typical Capacitance Collector-to-Emitter Voltage
Fig. Typical Gate Charge Gate-to-Emitter Voltage
1.50
Total Switching Losses (mJ)
Total Switching Losses (mJ)
480V 1.40
480V
1.30
8.0A
1.20
1.10
1.00
Gate Resistance ,Gate Resistance ((Ohm)
Junction Temperature
Fig. Typical Switching Losses Gate Resistance
Fig. Typical Switching Losses Junction Temperature
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IRG4BC30KDPbF
Collector-to-Emitter Current
Total Switching Losses (mJ)
480V
125°C
SAFE OPERATING AREA
1000
Collector-to-emitter Current
Collector-to-Emitter Voltage
Fig. Typical Switching Losses Collector-to-Emitter Current
Fig. Turn-Off
Instantaneous Forward Current
150°C
125°C 25°C
Forward Voltage Drop
Fig. Maximum Forward Voltage Drop Instantaneous Forward Current
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IRG4BC30KDPbF
200V 125°C 25°C
200V 125°C 25°C
IRRM
(ns)
6.0A
6.0A
(A/µs)
1000
(A/µs)
1000
Fig. Typical Reverse Recovery dif/dt
Fig. Typical Recovery Current dif/dt
10000
200V 125°C 25°C
200V 125°C 25°C
di(rec)M/dt (A/µs)
1000
(nC)
6.0A
6.0A
(A/µs)
1000
(A/µs)
1000
Fig. Typical Stored Charge dif/dt
Fig. Typical di(rec)M/dt dif/dt
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IRG4BC30KDPbF
Same type device D.U.T.
+Vge
430µF D.U.T.
td(off)
Fig. Test Circuit Measurement ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), td(off),
Eoff
t1+5µS Vceic dtdt
Fig. Test Waveforms Circuit Fig. 18a, Defining
Eoff, td(off),
GATE VOLTAGE D.U.T.
VOLTAGE CURRENT
DIODE RECOVERY WAVEFORMS
td(on)
dtdt DIODE REVERSE RECOVERY ENERGY
Erec idIc
Fig. Test Waveforms Circuit Fig. 18a,
Defining Eon, td(on),
Fig. Test Waveforms Circuit Fig. 18a,
Defining Erec, trr, Qrr,
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IRG4BC30KDPbF
GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T.
VOLTAGE D.U.T.
CURRENT
Figure 18e. Macro Waveforms Figure 18a's Test Circuit
1000V 6000µF 100V
D.U.T.
480V
480V @25°C
Figure Clamped Inductive Load Test Circuit
Figure Pulsed Collector Current Test Circuit
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IRG4BC30KDPbF
Notes:
Repetitive rating: VGE=20V; pulse width limited maximum junction temperature (figure VCC=80%(VCES), VGE=20V, L=10µH, (figure Pulse width 80µs; duty factor 0.1%. Pulse width 5.0µs, single shot.
TO-220AB Package Outline
2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048)
15.24 (.600) 14.84 (.584)
1.15 (.045)
LEAD ASSIGNMENTS IGBTs, CoPACK GATE GATE- DRAIN GATE DRAINSOURCE COLLECTOR EMITTER SOURCE DRAIN
LEAD ASSIGNMENTS
HEXFET
14.09 (.555) 13.47 (.530)
DRAIN
4.06 (.160) 3.55 (.140)
COLLECTOR
1.40 (.055) 1.15 (.045)
0.93 (.037) 0.69 (.027)
0.55 (.022) 0.46 (.018)
0.36 (.014)
2.54 (.100) NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION INCH
2.92 (.115) 2.64 (.104)
OUTLINE CONFORMS JEDEC OUTLINE TO-220AB. HEATSINK LEAD MEASUREMENTS INCLUDE BURRS.
TO-220AB Part Marking Information
XAMPLE 1010 CODE 1789 1997 LINE IONAL CODE
Note: assembly line position indicates "Lead-Free"
CODE 1997
Data specifications subject change without notice.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information.12/03
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IRG4BC30KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SO

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