IRG4BC20MDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SO
|
|
|
Top Searches for this datasheet
-94908
IRG4BC20MDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Short Circuit Rated Fast IGBT
VCES 600V
Rugged: 10µsec short circuit capable VGS=15V VCE(on) 10kHz applications IGBT Co-packaged with ultra-soft-recovery antiparallel diode Industry standard TO-220AB package Lead-Free Offers highest efficiency short circuit capability intermediate applications Provides best efficiency range frequency 10kHz) Optimized Appliance Motor Drives, Industrial (Short Circuit Proof) Drives Intermediate Frequency Range Drives High noise immune "Positive Only" gate driveNegative bias gate drive necessary designs- requires little snubbing Single Package switch bridge circuit applications Compatible with high voltage Gate Driver IC's Allows simpler gate drive Parameter
VCES 25°C 100°C 100°C 25°C 100°C TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Short Circuit Withstand Time Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction Storage Temperature Range Soldering Temperature, sec. Mounting Torque, 6-32 Screw.
VCE(on) typ. 1.85V
@VGE 15V,
Benefits
n-channel
TO-220AB
Absolute Maximum Ratings
Max.
+150 (0.063 (1.6mm) from case) (1.1
Units
Thermal Resistance
Parameter
Junction-to-Case IGBT Junction-to-Case Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
Typ.
-0.50 (0.07)
Max.
Units
°C/W
(oz)
www.irf.com
3/6/01
IRG4BC20MDPbF
Electrical Characteristics 25°C (unless otherwise specified)
Parameter Min. Collector-to-Emitter Breakdown Voltage V(BR)CES/TJ Temperature Coeff. Breakdown Voltage -VCE(on) Collector-to-Emitter Saturation Voltage -VGE(th) Gate Threshold Voltage VGE(th)/TJ Temperature Coeff. Threshold Voltage -gfe Forward Transconductance ICES Zero Gate Voltage Collector Current -VFM Diode Forward Voltage Drop -IGES Gate-to-Emitter Leakage Current -V(BR)CES Typ. -0.67 1.85 2.46 2.07 -1.4 -Max. Units Conditions 250µA V/°C 1.0mA Fig. 11A, 150°C VGE, 250µA mV/°C VGE, 250µA 100V, 600V 2500 600V, 150°C 8.0A Fig. 8.0A, 150°C ±100 ±20V
Switching Characteristics 25°C (unless otherwise specified)
td(on) td(off) Eoff td(on) td(off) Cies Coes Cres di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate Emitter Charge (turn-on) Gate Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Min. -Diode Peak Reverse Recovery Current -Diode Reverse Recovery Charge -Diode Peak Rate Fall Recovery -During -Typ. 0.41 2.03 2.44 3.49 Max. Units Conditions 400V Fig. 25°C 11A, 480V 15V, Energy losses include "tail" -diode reverse recovery. Fig. 150°C, Fig. 6.5A, 480V -VGE 15V, -Energy losses include "tail" diode reverse recovery. Measured from package -VGE Fig. 1.0MHz 25°C Fig. 125°C 8.0A 25°C Fig. 125°C 200V 25°C Fig. 125°C di/dt 200A/µs A/µs 25°C Fig. 125°C
www.irf.com
IRG4BC20MDPbF
Load Current
Duty cycle 125°C Tsink 90°C Gate drive specified Turn-on losses include effects reverse recovery Power Dissipation
rated voltage
Ideal diodes
Frequency
Fig. Typical Load Current Frequency
(Load Current IRMS fundamental)
Collector-to Emitter Current
Collector-to-Emitter Current
150°C
25°C VGE= 20µs PULSE WIDTH
Collector-to-Emitter Voltage
10.0
PULSE WIDTH
Gate-to-Emitter Voltage
Fig. Typical Output Characteristics
Fig. Typical Transfer Characteristics
www.irf.com
IRG4BC20MDPbF
80µs PULSE WIDTH
Collector-to Emitter Voltage
Maximum Collector Current(A)
5.5A
Case Temperature
Junction Temperature (°C)
Fig. Maximum Collector Current Case Temperature
Fig. Typical Collector-to-Emitter Voltage Junction Temperature
Thermal Response thJC
0.50 0.20 0.10 0.05 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJC 0.0001 0.001 0.01
0.02 0.01
0.01 0.00001
Rectangular Pulse Duration (sec)
Fig. Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
IRG4BC20MDPbF
Gate-to-Emitter Voltage
1MHz Cies SHORTED Cres Coes
400V
Capacitance (pF)
Cies
Coes Cres
Collector-to-Emitter Voltage
Total Gate Charge (nC)
Fig. Typical Capacitance Collector-to-Emitter Voltage
Fig. Typical Gate Charge Gate-to-Emitter Voltage
480V 25°C
480V 5.5A
Total Switching Losses (mJ)
Total Switching Losses (mJ)
Gate Resistance
Junction Temperature (°C)
Fig. Typical Switching Losses Gate Resistance
Fig. Typical Switching Losses Junction Temperature
www.irf.com
IRG4BC20MDPbF
10.0 150°C
125°
Total Switching Losses (mJ)
480V
Capacitance(pF)
SAFE OPERATING AREA
1000
Collector Current
VDS, Drain-to-Source Voltage
Fig. Typical Switching Losses Collector-to-Emitter Current
Fig. Turn-Off
Instantaneous Forward Current
150°C 125°C 25°C
Forward Voltage Drop
Fig. Maximum Forward Voltage Drop Instantaneous Forward Current
www.irf.com
IRG4BC20MDPbF
200V 125°C 25°C
200V 125°C 25°C
(ns)
8.0A
IRRM
8.0A 4.0A
4.0A
(A/µs)
1000
(A/µs)
1000
Fig. Typical Reverse Recovery dif/dt
Fig. Typical Recovery Current dif/dt
10000
200V 125°C 25°C
200V 125°C 25°C
di(rec)M/dt (A/µs)
(nC)
1000
4.0A 8.0A
8.0A
4.0A
(A/µs)
1000
(A/µs)
1000
Fig. Typical Stored Charge dif/dt
Fig. Typical di(rec)M/dt dif/dt
www.irf.com
IRG4BC20MDPbF
+Vge
Same type device D.U.T.
430µF D.U.T.
td(off)
Eoff
t1+5µS
Fig. Test Circuit Measurement ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), td(off),
Fig. Test Waveforms Circuit Fig. 18a, Defining
Eoff, td(off),
GATE VOLTAGE D.U.T.
VOLTAGE CURRENT
DIODE RECOVERY WAVEFORMS
td(on)
DIODE REVERSE RECOVERY ENERGY
Erec
Fig. Test Waveforms Circuit Fig. 18a,
Defining Eon, td(on),
Fig. Test Waveforms Circuit Fig. 18a,
Defining Erec, trr, Qrr,
www.irf.com
IRG4BC20MDPbF
GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T.
VOLTAGE D.U.T.
CURRENT
Figure 18e. Macro Waveforms Figure 18a's Test Circuit
1000V 6000µF 100V
D.U.T.
480V
480V @25°C
Figure Clamped Inductive Load Test Circuit
Figure Pulsed Collector Current Test Circuit
www.irf.com
IRG4BC20MDPbF
Notes:
Repetitive rating: VGE=20V; pulse width limited maximum junction temperature (figure VCC=80%(VCES), VGE=20V, L=10µH, (figure Pulse width 80µs; duty factor 0.1%. Pulse width 5.0µs, single shot.
TO-220AB Package Outline
2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048)
15.24 (.600) 14.84 (.584)
1.15 (.045)
GATE 1234-
LEAD ASSIGNMENTS
1234G
14.09 (.555) 13.47 (.530)
DRAIN SOURCE DRAIN
4.06 (.160) 3.55 (.140)
1.40 (.055) 1.15 (.045)
0.93 (.037) 0.69 (.027)
0.55 (.022) 0.46 (.018)
0.36 (.014)
2.54 (.100) NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION INCH
2.92 (.115) 2.64 (.104)
OUTLINE CONFORMS JEDEC OUTLINE TO-220AB. HEATSINK LEAD MEASUREMENTS INCLUDE BURRS.
TO-220AB Part Marking Information
1789 CODE
1997
Data specifications subject change without notice. This product been designed qualified Industrial market. Qualification Standards found IR's site.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. 12/03
www.irf.com
Other recent searches
UMV-3750-R16-G - UMV-3750-R16-G UMV-3750-R16-G Datasheet
MAX5360 - MAX5360 MAX5360 Datasheet
MAX5361 - MAX5361 MAX5361 Datasheet
MAX5362 - MAX5362 MAX5362 Datasheet
FS7VS-18A - FS7VS-18A FS7VS-18A Datasheet
FP211 - FP211 FP211 Datasheet
DL5221C - DL5221C DL5221C Datasheet
DL5267C - DL5267C DL5267C Datasheet
BAS40W1 - BAS40W1 BAS40W1 Datasheet
2SC4424 - 2SC4424 2SC4424 Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
