IRG4BC10KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SO
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IRG4BC10KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Short Circuit Rated UltraFast IGBT
VCES 600V
High short circuit rating optimized motor control, =10µs, @360V (start), 125°C, Combines conduction losses with high switching speed Tighter parameter distribution higher efficiency than previous generations IGBT co-packaged with HEXFREDultrafast, ultrasoft recovery antiparallel diodes Lead-Free
VCE(on) typ. 2.39V
@VGE 15V, 5.0A
n-channel
Benefits
Latest generation IGBTs offer highest power density motor controls possible HEXFREDdiodes optimized performance with IGBTs. Minimized recovery characteristics reduce noise, switching losses
TO-220AB
Absolute Maximum Ratings
Parameter
VCES 25°C 100°C 100°C 25°C 100°C TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction Storage Temperature Range Soldering Temperature, sec. Mounting Torque, 6-32 Screw.
Max.
+150 (0.063 (1.6mm) from case) (1.1
Units
Thermal Resistance
Parameter
Junction-to-Case IGBT Junction-to-Case Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
Typ.
0.50 (0.07)
Max.
Units
°C/W
(oz)
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12/23/03
IRG4BC10KDPbF
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ
VCE(on)
VGE(th) VGE(th)/TJ ICES IGES
Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 250µA Temperature Coeff. Breakdown Voltage 0.58 V/°C 1.0mA Collector-to-Emitter Saturation Voltage 2.39 2.62 5.0A Fig. 3.25 9.0A 2.63 5.0A, 150°C Gate Threshold Voltage VGE, 250µA Temperature Coeff. Threshold Voltage mV/°C VGE, 250µA Forward Transconductance 50V, 5.0A Zero Gate Voltage Collector Current 600V 1000 600V, 150°C Diode Forward Voltage Drop 4.0A Fig. 4.0A, 150°C Gate-to-Emitter Leakage Current ±100 ±20V
Switching Characteristics 25°C (unless otherwise specified)
td(on) td(off) Eoff td(on) td(off) Cies Coes Cres di(rec)M Parameter Total Gate Charge (turn-on) Gate Emitter Charge (turn-on) Gate Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate Fall Recovery During Min. Typ. 0.25 0.14 0.39 0.56 Max. Units Conditions 5.0A 400V Fig.8 25°C 5.0A, 480V 15V, Energy losses include "tail" diode reverse recovery 0.48 Fig. 9,10,14 360V, 125°C 15V, VCPK 500V 150°C, Fig. 10,11,14 5.0A, 480V 15V, Energy losses include "tail" diode reverse recovery Measured from package Fig. 1.0MHz 25°C Fig. 125°C 4.0A 25°C Fig. 125°C 200V 25°C Fig. 125°C di/dt 200A/µs A/µs 25°C Fig. 125°C
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IRG4BC10KDPbF
both:
LOAD CURRENT
Square wave:
Duty cycle: 125°C Tsink 90°C Gate drive specified
Power Dissipation
rated voltage
Ideal diodes
Frequency (KHz)
Fig. Typical Load Current Frequency
(Load Current IRMS fundamental)
Collector-to-Emitter Current
Collector Current
20µs PULSE WIDTH
PULSE WIDTH
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
Fig. Typical Output Characteristics
Fig. Typical Transfer Characteristics
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IRG4BC10KDPbF
Collector-to-Emitter Voltage(V)
PULSE WIDTH
Maximum Collector Current(A)
Case Temperature
Junction Temperature
Fig. Maximum Collector Current Case Temperature
Fig. Typical Collector-to-Emitter Voltage Junction Temperature
Thermal Response thJC
0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJC 0.0001 0.001 0.01
0.01 0.00001
Rectangular Pulse Duration (sec)
Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRG4BC10KDPbF
Gate-to-Emitter Voltage
1MHz Cies SHORTED Cres Coes
400V 5.0A
Capacitance (pF)
Cies
Coes Cres
Collector-to-Emitter Voltage
Total Gate Charge (nC)
Fig. Typical Capacitance Collector-to-Emitter Voltage
0.40
Fig. Typical Gate Charge Gate-to-Emitter Voltage
Total Switching Losses (mJ)
Total Switching Losses (mJ)
480V 0.38 5.0A
480V
0.36
0.34
0.32
0.30
Gate Resistance
Junction Temperature
Fig. Typical Switching Losses Gate Resistance
Fig. Typical Switching Losses Junction Temperature
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IRG4BC10KDPbF
Collector-to-Emitter Current
Total Switching Losses (mJ)
150° 480V
SAFE OPERATING AREA
1000
Collector Current
VCE, Collector-to-Emitter Voltage
Fig. Typical Switching Losses Collector-to-Emitter Current
Fig. Turn-Off
150°C 125°C
25°C
Forward Voltage Drop
Fig. Maximum Forward Voltage Drop Instantaneous Forward Current
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IRG4BC10KDPbF
200V 125°C 25°C
8.0A 4.0A
8.0A 4.0A
trr- (ns)
Irr-
200V 125°C 25°C
(A/µs)
1000
(A/µs)
1000
Fig. Typical Reverse Recovery dif/dt
200V 125°C 25°C
Fig. Typical Recovery Current dif/dt
1000 200V 125°C 25°C
8.0A
8.0A
(rec) M/dt- /µs)
4.0A
4.0A
Qrr- (nC)
(A/µs)
1000
(A/µs)
1000
Fig. Typical Stored Charge dif/dt
Fig. Typical di(rec)M/dt dif/dt,
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IRG4BC10KDPbF
Same type device D.U.T.
430µF D.U.T.
td(off)
Fig. Test Circuit Measurement
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), td(off),
d(on)
t=5µs Ets= (Eon +Eoff Eoff
Fig. Test Waveforms Circuit Fig. 18a, Defining
Eoff, td(off),
GATE VOLTAGE D.U.T.
VOLTAGE CURRENT
DIODE RECOVERY WAVEFORMS
td(on)
dtdt DIODE REVERSE RECOVERY ENERGY
Erec idIc
Fig. Test Waveforms Circuit Fig. 18a,
Defining Eon, td(on),
Fig. Test Waveforms Circuit Fig. 18a,
Defining Erec, trr, Qrr,
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IRG4BC10KDPbF
GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T.
VOLTAGE D.U.T.
CURRENT
Figure 18e. Macro Waveforms Figure 18a's Test Circuit
1000V 6000µF 100V
D.U.T.
480V
480V @25°C
Figure Clamped Inductive Load Test Circuit
Figure Pulsed Collector Current Test Circuit
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IRG4BC10KDPbF
Notes:
Repetitive rating: VGE=20V; pulse width limited maximum junction temperature (figure VCC=80%(VCES), VGE=20V, L=10µH, (figure Pulse width 80µs; duty factor 0.1%. Pulse width 5.0µs, single shot.
TO-220AB Package Outline
2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048)
15.24 (.600) 14.84 (.584)
1.15 (.045)
LEAD ASSIGNMENTS IGBTs, CoPACK GATE GATE DRAIN GATE SOURCE COLLECTOR DRAIN SOURCE EMITTER DRAIN
LEAD ASSIGNMENTS
HEXFET
14.09 (.555) 13.47 (.530)
DRAIN
4.06 (.160) 3.55 (.140)
COLLECTOR
1.40 (.055) 1.15 (.045)
0.93 (.037) 0.69 (.027)
0.55 (.022) 0.46 (.018)
0.36 (.014)
2.54 (.100) NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION INCH
2.92 (.115) 2.64 (.104)
OUTLINE CONFORMS JEDEC OUTLINE TO-220AB. HEATSINK LEAD MEASUREMENTS INCLUDE BURRS.
TO-220AB Part Marking Information
XAMP 1010 CODE 1789 1997 IONAL CODE NUMB
Note: assembly line position indicates "Lead-Free"
CODE 1997
Data specifications subject change without notice.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information.12/03
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