designed general-purpose amplifier low-speed switching applications.
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(PNP) 2N6034, 2N6035, 2N6036 (NPN) 2N6038, 2N6039 Plastic Darlington Complementary Silicon Power Transistors
designed general-purpose amplifier low-speed switching applications.
Ratings: Machine Model,
Human Body Model, 8000 Epoxy Meets 1/8"
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
MAXIMUM RATINGS
Rating Collector-Emitter Voltage 2N6034 2N6035, 2N6038 2N6036, 2N6039 Collector-Base Voltage 2N6034 2N6035, 2N6038 2N6036, 2N6039 Symbol VCEO Value Unit TO-225AA CASE STYLE mAdc Watts mW/°C Watts mW/°C
VCBO
Emitter-Base Voltage Collector Current Base Current Total Device Dissipation 25°C Derate above 25°C Total Device Dissipation 25°C Derate above 25°C Operating Storage Junction Temperature Range Continuous Peak
VEBO Tstg
MARKING DIAGRAM
N603x Year Work Week
Maximum ratings those values beyond which device damage occur. Maximum ratings applied device individual stress limit values (not normal operating conditions) valid simultaneously. these limits exceeded, device functional operation implied, damage occur reliability affected.
ORDERING INFORMATION
Device 2N6034 2N6035 2N6036 Package TO-225AA TO-225AA TO-225AA TO-225AA TO-225AA Shipping Units/Box Units/Box Units/Box Units/Box Units/Box
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RqJC RqJA 3.12 83.3 Unit °C/W °C/W
2N6038 2N6039
Semiconductor Components Industries, LLC, 2004
October, 2004 Rev.
Publication Order Number: 2N6035/D
(PNP) 2N6034, 2N6035, 2N6036 (NPN) 2N6038, 2N6039
ELECTRICAL CHARACTERISTICS 25_C unless otherwise noted)
Characteristic CHARACTERISTICS Collector-Emitter Sustaining Voltage mAdc, VCEO(sus) 2N6034 2N6035, 2N6038 2N6036, 2N6039 ICEO 2N6034 2N6035, 2N6038 2N6036, 2N6039 ICEX 2N6034 2N6035, 2N6038 2N6036, 2N6039 2N6034 2N6035, 2N6038 2N6036, 2N6039 ICBO 2N6034 2N6035, 2N6038 2N6036, 2N6039 IEBO mAdc mAdc Symbol Unit
Collector-Cutoff Current (VCE Vdc, (VCE Vdc, (VCE Vdc, Collector-Cutoff Current (VCE Vdc, VBE(off) Vdc) (VCE Vdc, VBE(off) Vdc) (VCE Vdc, VBE(off) Vdc) (VCE Vdc, VBE(off) Vdc, 125_C) (VCE Vdc, VBE(off) Vdc, 125_C) (VCE Vdc, VBE(off) Vdc, 125_C) Collector-Cutoff Current (VCB Vdc, (VCB Vdc, (VCB Vdc, Emitter-Cutoff Current (VBE Vdc, CHARACTERISTICS Current Gain Adc, Vdc) Adc, Vdc) Adc, Vdc) Collector-Emitter Saturation Voltage Adc, mAdc) Adc, mAdc) Base-Emitter Saturation Voltage Adc, mAdc) Base-Emitter Voltage Adc, Vdc) DYNAMIC CHARACTERISTICS
VCE(sat) VBE(sat) VBE(on) 15,000
Small-Signal Current-Gain 0.75 Adc, Vdc, MHz) Output Capacitance (VCB Vdc, MHz) *Indicates JEDEC Registered Data. 2N6034, 2N6035, 2N6036 2N6038, 2N6039
|hfe|
(PNP) 2N6034, 2N6035, 2N6036 (NPN) 2N6038, 2N6039
VARIED OBTAIN DESIRED CURRENT LEVELS MUST FAST RECOVERY TYPE, 1N5825 USED ABOVE MSD6100 USED BELOW
approx +8.0 approx DUTY CYCLE 1.0% +4.0
disconnected varied obtain desired test currents. test circuit, reverse diode, polarities input pulses.
SCOPE
IC/IB
25°C
TIME
VBE(off)
0.04 0.06
COLLECTOR CURRENT (AMP)
Figure Switching Times Test Circuit
Figure Switching Times
r(t), TRANSIENT THERMAL RESISTANCE, NORMALIZED
0.05 0.02 0.01 SINGLE PULSE P(pk) JC(t) r(t) 3.12°C/W CURVES APPLY POWER PULSE TRAIN SHOWN READ TIME TJ(pk) P(pk) JC(t) DUTY CYCLE, t1/t2
0.07 0.05 0.03 0.02 0.01 0.01
0.02 0.03
0.05
TIME (ms)
1000
Figure Thermal Response
(PNP) 2N6034, 2N6035, 2N6036 (NPN) 2N6038, 2N6039
ACTIVE-REGION SAFE-OPERATING AREA
150°C BONDING WIRE LIMITED THERMALLY LIMITED 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED 2N6039 2N6038 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
COLLECTOR CURRENT (AMP)
150°C BONDING WIRE LIMITED THERMALLY LIMITED 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED 2N6036 2N6035 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2N6035, 2N6036
COLLECTOR CURRENT (AMP)
Figure 2N6038, 2N6039
There limitations power handling ability transistor: average junction temperature second breakdown. Safe operating area curves indicate limits transistor that must observed reliable operation; i.e., transistor must subjected greater dissipation than curves indicate. data Figures based TJ(pk) 150_C; variable depending conditions. Second breakdown pulse limits valid duty cycles provided TJ(pk) 150_C. TJ(pk) calculated from data Figure high case temperatures, thermal limitations will reduce power that handled values less than limitations imposed second breakdown.
25°C
CAPACITANCE (pF)
0.04 0.06 REVERSE VOLTAGE (VOLTS)
Figure Capacitance
(PNP) 2N6034, 2N6035, 2N6036 (NPN) 2N6038, 2N6039
2N6034, 2N6035, 2N6036
CURRENT GAIN 25°C 0.04 0.06 125°C CURRENT GAIN 25°C 0.04 0.06 125°C
2N6038, 2N6039
COLLECTOR CURRENT (AMP)
COLLECTOR CURRENT (AMP)
Figure Current Gain
COLLECTOR-EMITTER VOLTAGE (VOLTS)
25°C BASE CURRENT (mA)
COLLECTOR-EMITTER VOLTAGE (VOLTS)
BASE CURRENT (mA) 25°C
Figure Collector Saturation Region
25°C VOLTAGE (VOLTS) VBE(sat) IC/IB VOLTAGE (VOLTS)
25°C VBE(sat) IC/IB
VCE(sat) IC/IB
VCE(sat) IC/IB
0.04 0.06
0.04 0.06
COLLECTOR CURRENT (AMP)
COLLECTOR CURRENT (AMP)
Figure "On" Voltages
(PNP) 2N6034, 2N6035, 2N6036 (NPN) 2N6038, 2N6039
PACKAGE DIMENSIONS
TO-225AA CASE 77-09 ISSUE
NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: INCH. 077-01 THRU OBSOLETE, STANDARD 077-09. INCHES 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 0.050 0.095 0.015 0.025 0.575 0.655 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 MILLIMETERS 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 1.27 2.41 0.39 0.63 14.61 16.63 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02
0.25 (0.010)
0.25 (0.010)
STYLE EMITTER COLLECTOR BASE
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2N6035/D
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