2SK1530 High-Power Amplifier Application High breakdown volt

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2SK1530 High-Power Amplifier Application High breakdown volt

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2SK1530
2SK1530
High-Power Amplifier Application
High breakdown voltage High forward transfer admittance Complementary 2SJ201 VDSS 200V |Yfs| (typ.) Unit:
Maximum Ratings 25°C)
Characteristics Drain-source voltage Gate-source voltage Drain current (Note Symbol VDSS VGSS Tstg Rating -55~150 Unit
Drain power dissipation 25°C) Channel temperature Storage temperature range
Marking
Part abbreviation code) TOSHIBA
JEDEC JEITA TOSHIBA
2-21F1B
2SK1530
JAPAN
line indicates lead (Pb)-free package lead (Pb)-free finish.
Weight: 9.75 (typ.)
Electrical Characteristics 25°C)
Characteristics Drain cut-off current Gate leakage current Drain-source breakdown voltage Drain-source saturation voltage Gate-source cut-off voltage (Note Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Symbol IDSS IGSS (BR) (ON) (OFF) |Yfs| Ciss Coss Crss Test Condition Typ. ±0.5 Unit
Note Ensure that channel temperature does exceed 150°C. Note (OFF) Classification 0.8~1.6 1.4~2.8
This transistor electrostatic-sensitive device. Please handle with caution.
2004-07-06
2SK1530
2004-07-06
2SK1530
Switching Time Test Circuit
Waveforms
2004-07-06
2SK1530
RESTRICTIONS PRODUCT
information contained herein subject change without notice.
030619EAA
information contained herein presented only guide applications products. responsibility assumed TOSHIBA infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights TOSHIBA others. TOSHIBA continually working improve quality reliability products. Nevertheless, semiconductor devices general malfunction fail their inherent electrical sensitivity vulnerability physical stress. responsibility buyer, when utilizing TOSHIBA products, comply with standards safety making safe design entire system, avoid situations which malfunction failure such TOSHIBA products could cause loss human life, bodily injury damage property. developing your designs, please ensure that TOSHIBA products used within specified operating ranges forth most recent TOSHIBA products specifications. Also, please keep mind precautions conditions forth "Handling Guide Semiconductor Devices," "TOSHIBA Semiconductor Reliability Handbook" etc. TOSHIBA products listed this document intended usage general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products neither intended warranted usage equipment that requires extraordinarily high quality and/or reliability malfunction failure which cause loss human life bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, types safety devices, etc. Unintended Usage TOSHIBA products listed this document shall made customer's risk. TOSHIBA products should embedded downstream products which prohibited produced sold, under regulations.
2004-07-06

2SK1530 High-Power Amplifier Application High breakdown volt

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