TOSHIBA Field Effect Transistor Silicon Channel Type (-MOSIII 2SK

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TOSHIBA Field Effect Transistor Silicon Channel Type (-MOSIII 2SK

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2SK1486
TOSHIBA Field Effect Transistor Silicon Channel Type (-MOSIII
2SK1486
Chopper Regulator, DC-DC Converter Motor Drive Applications
drain-source resistance High forward transfer admittance leakage current Enhancement mode (ON) 0.08 (typ.) |Yfs| (typ.) Unit:
IDSS (max) (VDS 2.0~4.0 (VDS
Maximum Ratings 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS Gate-source voltage Drain current (Note Symbol VDSS VDGR VGSS Tstg Rating -55~150 Unit
Pulse (Note
Drain power dissipation 25°C) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
2-21F1B
Thermal Characteristics
Characteristics Thermal resistance, channel case Thermal resistance, channel ambient Symbol (ch-c) (ch-a) 0.625 35.7 Unit
Weight: 9.75 (typ.)
Note Ensure that channel temperature does exceed 150°C. This transistor electrostatic-sensitive device. Please handle with caution.
2004-07-06
2SK1486
Electrical Characteristics 25°C)
Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS (BR) (ON) |Yfs| Ciss Crss Coss Test Condition Typ. 0.08 3500 1250 ±100 0.095 Unit
Turn-on time Switching time Fall time
Turn-off time Total gate charge (Gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge
toff
Source-Drain Ratings Characteristics 25°C)
Characteristics Continuous drain reverse current (Note Pulse drain reverse current (Note Forward voltage (diode) Reverse recovery time Reverse recovered charge Symbol IDRP VDSF Test Condition dIDR Typ. -1.8 Unit
Marking
Part abbreviation code) TOSHIBA
2SK1486
JAPAN
line indicates lead (Pb)-free package lead (Pb)-free finish.
2004-07-06
2SK1486
2004-07-06
2SK1486
2004-07-06
2SK1486
2004-07-06
2SK1486
RESTRICTIONS PRODUCT
information contained herein subject change without notice.
030619EAA
information contained herein presented only guide applications products. responsibility assumed TOSHIBA infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights TOSHIBA others. TOSHIBA continually working improve quality reliability products. Nevertheless, semiconductor devices general malfunction fail their inherent electrical sensitivity vulnerability physical stress. responsibility buyer, when utilizing TOSHIBA products, comply with standards safety making safe design entire system, avoid situations which malfunction failure such TOSHIBA products could cause loss human life, bodily injury damage property. developing your designs, please ensure that TOSHIBA products used within specified operating ranges forth most recent TOSHIBA products specifications. Also, please keep mind precautions conditions forth "Handling Guide Semiconductor Devices," "TOSHIBA Semiconductor Reliability Handbook" etc. TOSHIBA products listed this document intended usage general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products neither intended warranted usage equipment that requires extraordinarily high quality and/or reliability malfunction failure which cause loss human life bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, types safety devices, etc. Unintended Usage TOSHIBA products listed this document shall made customer's risk. TOSHIBA products should embedded downstream products which prohibited produced sold, under regulations.
2004-07-06

TOSHIBA Field Effect Transistor Silicon Channel Type (-MOSIII 2SK

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