BAND GaAs matched MGF0916A GaAs with N-channel schottky Gate, des

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BAND GaAs matched MGF0916A GaAs with N-channel schottky Gate, des

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MGF0916A
BAND GaAs matched
MGF0916A GaAs with N-channel schottky Gate, designed band amplifiers.
FEATURES
High output power Po=23dBm(TYP.) @f=1.9GHz,Pin=5dBm High power gain Gp=19dB(TYP.) @f=1.9GHz High power added efficiency add=30%(TYP.) @f=1.9GHz,Pin=5dBm Hermetic Package
APPLICATION
Band power amplifiers
Fig.1
QUALITY
RECOMMENDED BIAS CONDITIONS
Vds=6V Ids=100mA Rg=1k
Delivery
-01:Tape Reel(1K), -03:Trai(50pcs)
(Ta=25°C)
Absolute maximum ratings
Symbol
VGSO VGDO Tstg
Parameter
Gate sourcebreakdown voltage Gate drain breakdown voltage Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature
Ratings
-0.6 +175 (Ta=25°C)
Unit
Electrical characteristics
Symbol
IDSS VGS(off) Rth(ch-c)
Parameter
Saturated drain current Gate source cut-off voltage Transconductance Output power Power added Efficiency Linear Power Gain Noise figure Thermal Resistance
Test conditions
Min. VDS=3V,VGS=0V VDS=3V,ID=0.1mA VDS=3V,ID=100mA VDS=6V,ID=100m A,f=1.9GHz Pin=5dBm VDS=6V,ID=100mA,f=1.9GHz Method -1.5
Limits
Typ. Max. -4.5
Unit
°C/W
*1:Channel case
Above parameters, ratings, limits subject change.
Mitsubishi Electric
June/2004
MGF0916A TYPICAL CHARACTERISTICS
Po,Gp,PAE vs.Pin
Po(dBm) Pin(dBm)
VDS=6V ID=0.1A f=1.9GHz
Gp(dB),PAE(%)
IM3,Po(SCL) Pi(SCL)
Po(SCL) (dBm)
VD=6V ID=100mA f1=1.90GHz f2=1.91GHz
(dBc)
Pi(SCL) (dBm)
Mitsubishi Electric
June/2004
MGF0916A
freq. (MHz) 1000 1400 1800 2200 2600 3000 3400 3800 4200 4600 5000 5400 5800 6200 6600 7000 7400 7800 8200 8600 9000 9400 9800 10200 10600 11000 11400 11800 12200
PARAMETERS
(Ta=25°C, VDS=6V, ID=100mA, Reference Plane Fig.1)
(mag) 0.016 0.023 0.027 0.029 0.030 0.030 0.030 0.029 0.029 0.028 0.028 0.028 0.029 0.030 0.031 0.033 0.036 0.038 0.041 0.044 0.047 0.050 0.054 0.057 0.061 0.065 0.070 0.075 0.081 0.088 (ang) 60.06 45.59 32.76 21.52 11.83 3.59 -3.30 -8.97 -13.57 -17.24 -20.15 -22.48 -24.39 -26.06 -27.67 -29.37 -31.33 -33.68 -36.55 -40.05 -44.27 -49.26 -55.06 -61.67 -69.05 -77.14 -85.81 -94.92 -104.26 -113.56
(mag) 0.477 0.509 0.543 0.578 0.613 0.646 0.679 0.708 0.736 0.760 0.782 0.801 0.817 0.831 0.843 0.853 0.861 0.868 0.874 0.879 0.883 0.886 0.888 0.888 0.886 0.880 0.871 0.857 0.836 0.806 (ang) -37.47 -57.48 -73.42 -86.07 -96.10 -104.09 -110.51 -115.77 -120.19 -124.02 -127.46 -130.64 -133.65 -136.55 -139.35 -142.06 -144.65 -147.09 -149.36 -151.43 -153.28 -154.93 -156.42 -157.81 -159.22 -160.83 -162.85 -165.57 -169.37 -174.68
0.25 0.32 0.37 0.44 0.51 0.60 0.72 0.84 0.93 1.05 1.09 1.16 1.17 1.19 1.22 1.23 1.19 1.21 1.21 1.23 1.27 1.33 1.36 1.40 1.40 1.39 1.36 1.35 1.36 1.42
MAG/MSG
(mag) 0.954 0.915 0.887 0.866 0.852 0.844 0.829 0.822 0.813 0.806 0.802 0.792 0.779 0.763 0.741 0.714 0.688 0.660 0.628 0.590 0.540 0.477 0.400 0.311 0.217 0.126 0.073 0.113 0.188 0.260
(ang) -40.32 -62.48 -80.56 -95.15 -106.84 -116.18 -123.68 -129.83 -135.06 -139.74 -144.18 -148.63 -153.25 -158.12 -163.24 -168.50 -173.69 -178.49 176.97 172.29 167.52 162.13 155.63 146.74 133.83 110.51 51.97 -5.75 -27.30 -36.27
(mag) 7.263 6.256 5.395 4.664 4.047 3.529 3.099 2.743 2.452 2.215 2.025 1.874 1.755 1.661 1.589 1.533 1.490 1.457 1.430 1.409 1.391 1.374 1.358 1.342 1.325 1.306 1.286 1.262 1.236 1.206
(ang) 145.11 126.36 110.17 96.15 83.93 73.20 63.67 55.09 47.23 39.92 32.99 26.30 19.72 13.18 6.57 -0.16 -7.07 -14.20 -21.60 -29.29 -37.32 -45.70 -54.48 -63.70 -73.41 -83.66 -94.52 -106.08 -118.45 -131.74
(dB) 26.57 24.35 23.01 22.06 21.30 20.71 20.14 19.76 19.27 17.60 16.73 15.86 15.29 14.78 14.24 13.79 13.50 13.08 12.67 12.17 11.56 10.94 10.41 9.95 9.62 9.31 9.08 8.73 8.26 7.52
Gate Mark Round corner
0.80
Gate Mark
Reference Plane
4.20
Reference Plane
4.00
0.25
Gate Drain Source
BACK SIDE PATTERN
(Unit:mm)
Fig.1 OUTLINE DRAWING
Mitsubishi Electric June/2004
1.20
MGF0916A
BAND GaAs matched
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Mitsubishi Electric
June/2004

BAND GaAs matched MGF0916A GaAs with N-channel schottky Gate, des

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