-6A, -100V, 0.600 Ohm, P-Channel Power MOSFET 2N6896 P-Channel en

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-6A, -100V, 0.600 Ohm, P-Channel Power MOSFET 2N6896 P-Channel en

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2N6896
-6A, -100V, 0.600 Ohm, P-Channel Power MOSFET
2N6896 P-Channel enhancement mode silicon gate power field effect transistor designed high-speed applications such switching regulators, switching converters, relay drivers, drivers high power bipolar switching transistors.
Features
-6A, -100V rDS(ON) 0.600 Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance
Ordering Information
PART NUMBER 2N6896 PACKAGE TO-204AA BRAND 2N6896
Majority Carrier Device Related Literature TB334 "Guidelines Soldering Surface Mount Components Boards"
NOTE: When ordering, include entire part number.
Symbol
Packaging
JEDEC TO-204AA
DRAIN (FLANGE)
SOURCE (PIN GATE (PIN
©2001 Fairchild Semiconductor Corporation
2N6896 Rev.
2N6896
Absolute Maximum Ratings
25oC, Unless Otherwise Specified 2N6896 -100 -100 0.48 UNITS W/oC
Drain Source Voltage (Note VDSS Drain Gate Voltage (RGS (Note .VDGR Continuous Drain Current Pulsed Drain Current Gate Source Voltage Maximum Power Dissipation Above 25oC, Derate Linearly Operating Storage Temperature TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case 10s. Package Body 10s, Techbrief .Tpkg
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: 25oC 125oC.
Electrical Specifications
PARAMETER
25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS 1mA, VDS, 0.25mA -80V -80V, 125oC -100 3.8A, -50V RGEN -10V 2.28 0.600 0.960 2.083 UNITS
oC/W
Drain Source Breakdown Voltage Gate Threshold Voltage Zero-Gate Voltage Drain Current
Gate Source Leakage Current Drain Source On-Voltage (Note
IGSS VDS(ON)
±20V, 3.8A, -10V -10V
Drain Source Resistance (Note
rDS(ON)
3.8A, -10V 3.8A, 10V, 125oC
Forward Transconductance (Note Input Capacitance Output Capacitance Reverse-Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Thermal Resistance Junction Case
CISS COSS CRSS td(ON) td(OFF)
3.8A, -10V -25V 0.1MHz
Source Drain Diode Specifications
PARAMETER Source Drain Diode Voltage (Note Diode Reverse Recovery Time NOTES: Pulsed: Pulse duration 300µs, max, duty cycle Repetitive Rating: pulse width limited maximum junction temperature. SYMBOL TEST CONDITIONS dISD/dt 50A/µs UNITS
©2001 Fairchild Semiconductor Corporation
2N6896 Rev.
2N6896 Typical Performance Curves
POWER DISSIPATION MULTIPLIER 10µs DRAIN CURRENT 100µs 1.0ms 10ms 100ms
Unless Otherwise Specified
25oC RATED
OPERATION THIS AREA LIMITED rDS(ON) VDSS (MAX) 100V
CASE TEMPERATURE (oC)
0.01
VDS, DRAIN SOURCE
1000
FIGURE NORMALIZED POWER DISSIPATION CASE TEMPERATURE
FIGURE FORWARD BIAS OPERATING AREAS
Id(ON), ON-STATE DRAIN CURRENT
rDS(ON), DRAIN SOURCE RESISTANCE
-10V PULSE TEST PULSE DURATION 80µs DUTY CYCLE
-40oC -10V PULSE TEST PULSE DURATION 80µs DUTY CYCLE 25oC -40oC 125oC
25oC 125oC
VGS, GATE SOURCE VOLTAGE
DRAIN CURRENT
FIGURE TRANSFER CHARACTERISTICS
FIGURE DRAIN SOURCE RESISTANCE DRAIN CURRENT
NORMALIZED RESISTANCE 3.8A THRESHOLD VOLTAGE NORMALIZED GATE
0.25mA
JUNCTION TEMPERATURE (oC)
JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
FIGURE NORMALIZED GATE THRESHOLD VOLTAGE JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corporation
2N6896 Rev.
2N6896 Typical Performance Curves
CAPACITANCE (pF) VDS, DRAIN SOURCE VOLTAGE COSS CRSS CISS gfs, TRANSCONDUCTANCE
Unless Otherwise Specified (Continued)
1MHz
125oC -40oC 25oC PULSE TEST PULSE DURATION 80µs DUTY CYCLE
DRAIN CURRENT
FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE
FIGURE TRANSCONDUCTANCE DRAIN CURRENT
Test Circuits Waveforms
VARY OBTAIN REQUIRED PEAK
0.01
BVDSS
FIGURE UNCLAMPED ENERGY TEST CIRCUIT
FIGURE UNCLAMPED ENERGY WAVEFORMS
td(ON)
tOFF td(OFF)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
©2001 Fairchild Semiconductor Corporation
2N6896 Rev.
2N6896 Test Circuits Waveforms
CURRENT REGULATOR
(Continued)
-VDS (ISOLATED SUPPLY)
BATTERY 0.2µF 0.3µF IG(REF) CURRENT SAMPLING RESISTOR +VDS CURRENT SAMPLING RESISTOR
Qg(TOT)
IG(REF)
FIGURE GATE CHARGE TEST CIRCUIT
FIGURE GATE CHARGE WAVEFORMS
©2001 Fairchild Semiconductor Corporation
2N6896 Rev.
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
Quiet SeriesDISCLAIMER
FAST
QFETQSQT OptoelectronicsQuiet SeriesSILENT SWITCHER
SMART SuperSOTTM-6 SuperSOTTM-8
VCX
STAR*POWER used under license
FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: Life support devices systems devices critical component component life systems which, intended surgical implant into support device system whose failure perform body, support sustain life, whose reasonably expected cause failure life failure perform when properly used accordance support device system, affect safety with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.

-6A, -100V, 0.600 Ohm, P-Channel Power MOSFET 2N6896 P-Channel en

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