14A, 100V, 0.180 Ohm, N-Channel Power MOSFET 2N6756 N-Channel enh

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14A, 100V, 0.180 Ohm, N-Channel Power MOSFET 2N6756 N-Channel enh

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2N6756
14A, 100V, 0.180 Ohm, N-Channel Power MOSFET
2N6756 N-Channel enhancement mode silicon gate power field effect transistor designed applications such switching regulators, switching convertors, motor drivers, relay drivers, drivers high power bipolar switching transistors requiring high speed gate drive power. These types operated directly from integrated circuits.
Features
14A, 100V rDS(ON) 0.180 Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device
Ordering Information
PART NUMBER 2N6756 PACKAGE TO-204AA BRAND 2N6756
Related Literature TB334 "Guidelines Soldering Surface Mount Components Boards"
NOTE: When ordering, entire part number.
Symbol
Packaging
JEDEC TO-204AA
DRAIN (FLANGE)
SOURCE (PIN GATE (PIN
©2001 Fairchild Semiconductor Corporation
2N6756 Rev.
2N6756
Absolute Maximum Ratings
25oC, Unless Otherwise Specified 2N6756 Drain Source Breakdown Voltage (Note Drain Gate Voltage (RGS 20k) (Note VDGR Continuous Drain Current 100oC Pulsed Drain Current (Note Gate Source Voltage Maximum Power Dissipation (Figure 100oC Linear Derating Factor (Figure Operating Storage Temperature TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case 10s. Package Body 10s, Techbrief Tpkg UNITS W/oC
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: 25oC 125oC.
Electrical Specifications
PARAMETER
25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS 1.0mA, VDS, Rating, Rating, 125oC ±20V 10V, 125oC 25V, 1MHz (Figure Free Operation 0.14 2.52 ±100 0.18 0.33 12.0 1.67 UNITS
oC/W oC/W
Drain Source Breakdown Voltage Gate Threshold Voltage (Note Zero Gate Voltage Drain Current (Note
On-State Drain Voltage (Note Gate Source Leakage Current (Note Drain Source Resistance (Note
VDS(ON) IGSS rDS(ON)
Forward Transconductance (Note Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction-to-Case Thermal Resistance Junction-to-Ambient
td(ON) td(OFF) CISS COSS CRSS
15V, 36V, (Figures MOSFET Switching Times Essentially Independent Operating Temperature
©2001 Fairchild Semiconductor Corporation
2N6756 Rev.
2N6756
Source Drain Diode Specifications
PARAMETER Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) SYMBOL TEST CONDITIONS Modified MOSFET Symbol Showing Integral Reverse Junction Rectifier
UNITS
Source Drain Diode Voltage (Note Reverse Recovery Time Reverse Recovery Charge NOTES:
25oC, 14A, 150oC, ISM, dISD/dt 100A/µs 150oC, ISM, dISD/dt 100A/µs
0.90
Pulse test: pulse width 300µs, duty cycle Repetitive rating: pulse width limited maximum junction temperature.
Typical Performance Curves
POWER DISSIPATION MULTIPLIER
Unless Otherwise Specified
10µs DRAIN CURRENT VDS, DRAIN SOURCE VOLTAGE RATED SINGLE PULSE 10ms
100µs
AMBIENT TEMPERATURE (oC)
FIGURE NORMALIZED POWER DISSIPATION AMBIENT TEMPERATURE
FIGURE FORWARD BIAS SAFE OPERATING AREA
80µs PULSE TEST
80µs PULSE TEST
DRAIN CURRENT
DRAIN CURRENT
VDS, DRAIN SOURCE VOLTAGE
VDS, DRAIN SOURCE VOLTAGE
FIGURE OUTPUT CHARACTERISTICS
FIGURE SATURATION CHARACTERISTICS
©2001 Fairchild Semiconductor Corporation
2N6756 Rev.
2N6756 Typical Performance Curves
Unless Otherwise Specified (Continued)
DRAIN CURRENT
NORMALIZED RESISTANCE
80µs PULSE TEST
125oC 25oC -55oC
VGS, GATE SOURCE VOLTAGE
JUNCTION TEMPERATURE (oC)
FIGURE TRANSFER CHARACTERISTICS
FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
2000
gfs, TRANSCONDUCTANCE 1MHz
80µs PULSE TEST -55oC
1600 CAPACITANCE (pF)
25oC 125oC
1200 CISS COSS CRSS
VDS, DRAIN SOURCE VOLTAGE
DRAIN CURRENT
FIGURE
CAPACITANCE DRAIN SOURCE VOLTAGE
FIGURE TRANSCONDUCTANCE DRAIN CURRENT
SOURCE CURRENT 2N6756
ISM, 2N6756
150oC
25oC
CASE TEMPERATURE (oC)
FIGURE SOURCE DRAIN DIODE VOLTAGE
©2001 Fairchild Semiconductor Corporation
2N6756 Rev.
2N6756 Test Circuits Waveforms
BVDSS VARY OBTAIN REQUIRED PEAK
0.01
FIGURE UNCLAMPED ENERGY TEST CIRCUIT
FIGURE UNCLAMPED ENERGY WAVEFORMS
td(ON)
tOFF td(OFF)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
©2001 Fairchild Semiconductor Corporation
2N6756 Rev.
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
Quiet SeriesDISCLAIMER
FAST
QFETQSQT OptoelectronicsQuiet SeriesSILENT SWITCHER
SMART SuperSOTTM-6 SuperSOTTM-8
VCX
STAR*POWER used under license
FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: Life support devices systems devices critical component component life systems which, intended surgical implant into support device system whose failure perform body, support sustain life, whose reasonably expected cause failure life failure perform when properly used accordance support device system, affect safety with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.

14A, 100V, 0.180 Ohm, N-Channel Power MOSFET 2N6756 N-Channel enh

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