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TLP251 Inverter Conditionor Induction Heating Transistor Inverter


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TLP251
TLP251
Inverter Conditionor Induction Heating Transistor Inverter Power Gate Drive IGBT Gate Drive
TOSHIBA TLP251 consists GaAAs light emitting diode integrated photodetector. This unit 8-lead package. TLP251 suitable gate driving circuit IGBT power FET. Especially TLP251 capable "direct" gate drive lower power IGBTs. (~15A) Input threshold current: IF=5mA(max.) Supply current (ICC): 11mA(max.) Supply voltage (VCC): 10-35V Output current (IO): ±0.4A(max.) Switching time (tpLH tpHL): 1µs(max.) Isolation voltage: 2500Vrms(min.) recognized: UL1577, file no.E67349 TOSHIBA Weight: 0.54g 11-10C4 Unit
Configuration (top view)
Schematic
0.1µF bypass capcitor must connected between 5(see Note
N.C. Anode Cathode N.C. (Output) N.C.
Truth Table
Input
2004-06-25
TLP251
Maximum Ratings 25°C)
Characteristic Forward current Forward current derating 70°C) Peak transient forward current Reverse voltage Junction temperature Symbol Rating 0.36 Unit
(Note
IFPT
peak output current
2.0µs, 15kHz) (Note
IOPH
peak output current 2.0µs, 15kHz)
(Note IOPL
Detector
Output voltage
70°C) 85°C) 70°C) 85°C)
0.73
Supply voltage Output voltage derating 70°C) Supply voltage derating 70°C) Junction temperature Operating frequency Operating temperature range Storage temperature range Lead soldering temperature(10s) Isolation voltage (AC, 1min., R.H. 60%) Note Note Note Pulse width 1µs, 300pps Expornential waveform
(Note Topr Tstg (Note Tsol
0.73 -20~85 -55~125 2500
Vrms
(Note
Expornential waveform, IOPH -0.25A( 2.0µs), IOPL +0.25A(2.0µs)
Note more from lead root. Note Device considerd terminal device: Pins shorted together, pins shorted together. Note ceramic capacitor(0.1µF)should connected from stabilize operation high gain linear ampifier. Failure provide bypassing impair swiching property.The total lead length between capacitor coupler should exceed 1cm.
2004-06-25
TLP251
Recommended Operating Conditions
Characteristic Input current, Input voltage, Supply voltage Peak output current Operating temperature (Note Symbol IF(ON) VF(OFF) IOPH IOPL Topr Min. Typ. Max. ±0.1 Unit
Note Input signal rise time (fall time)
Electrical Characteristics -20~70°C, unless otherwise specified)
Characteristic Symbol Test Cir- cuit Test Condition Min. Typ.* Max. Unit
Input forward voltage Temperature coefficient forward voltage Input reverse current Input capacitance
25°C 25°C 1MHz 25°C 10mA VCC=30V V8-6 (*1) V6-5 2.5V VCC1 +15V, VEE1 -15V 200, VCC1 +15V, VEE1 -15V 200, 0.8V 30V, 10mA
-0.1
-2.0 -0.25
level
Output current
IOPH IOPL
13.2 -14.5
level level
Output voltage
-12.5
level
level
Supply current
ICCH
25°C 30V, 10mA 30V,
level "Output "Output
ICCL
25°C 30V,
Threshould input current Threshold input voltage Supply voltage Capacitance (input-output)
IFLH VFLH
VCC1 +15V, VEE1 -15V 200, VCC1 +15V, VEE1 -15V 200,
1MHz 500V, R.H.
Resistance (input-output)
typical values Ta=25°C
(*1): Duration time 50µs
2004-06-25
TLP251
Switching Characteristics -20~70°C, unless otherwise specified)
Characteristic Propagation delay time Output rise time Output fall time Common mode transient immunity high level output Common mode transient immunity level output Symbol tpLH tpHL 600V, 8mA, 30V, 600V, 0mA, 30V, Test Cir- cuit Test Condition Min. (Note VCC1 +15V, VEE1 -15V -5000 5000 Typ.* 0.25 0.25 Max. Unit
*All typical values Ta=25 Note Input signal rise time (fall time)
2004-06-25
TLP251
Test Circuit
Test Circuit IOPL
0.1µF
IOPL V6-5
Test Circuit IOPH
0.1µF IOPH V8-6
Test Circuit
VCC1 0.1µF
VEE1
Test Circuit
0.1µF VEE1 VCC1
2004-06-25
TLP251
Test Circuit tpLH, tpHL,
0.1µF VCC1
tpLH VEE1
tpHL
Test Circuit CMH,
0.1µF
600V 480(V) (µs) 480(V)
A(IF 8mA) B(IF
(CMH) maximum rate rise (fall) common mode voltage that sustained with output voltage (high) state.
2004-06-25
TLP251
-2.6
0.05 0.03 0.01
Forward voltage temperature coefficient (mV/°C)
-2.4
(mA)
Forward current
-2.2
-2.0
-1.8
-1.6
-1.4
Forward voltage
Forward current
(mA)
Allowable forward current
Allowable supply voltage
(mA)
Ambient temperature (°C)
Ambient temperature (°C)
IOPH, IOPL
Allowable peak output current IOPH, IOPL
Ambient temperature (°C)
2004-06-25
TLP251
RESTRICTIONS PRODUCT
information contained herein subject change without notice.
030619EBC
information contained herein presented only guide applications products. responsibility assumed TOSHIBA infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights TOSHIBA others. TOSHIBA continually working improve quality reliability products. Nevertheless, semiconductor devices general malfunction fail their inherent electrical sensitivity vulnerability physical stress. responsibility buyer, when utilizing TOSHIBA products, comply with standards safety making safe design entire system, avoid situations which malfunction failure such TOSHIBA products could cause loss human life, bodily injury damage property. developing your designs, please ensure that TOSHIBA products used within specified operating ranges forth most recent TOSHIBA products specifications. Also, please keep mind precautions conditions forth "Handling Guide Semiconductor Devices," "TOSHIBA Semiconductor Reliability Handbook" etc. TOSHIBA products listed this document intended usage general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products neither intended warranted usage equipment that requires extraordinarily high quality and/or reliability malfunction failure which cause loss human life bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, types safety devices, etc. Unintended Usage TOSHIBA products listed this document shall made customer's risk. products described this document subject foreign exchange foreign trade laws. TOSHIBA products should embedded downstream products which prohibited produced sold, under regulations. GaAs(Gallium Arsenide) used this product. dust vapor harmful human body. break, cut, crush dissolve chemically.
2004-06-25

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