BF851A; BF851B; BF851C N-channel junction FETs Product specificat
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BF851A; BF851B; BF851C N-channel junction FETs
Product specification File under Discrete Semiconductors, SC07 1995
Philips Semiconductors
Philips Semiconductors
Product specification
N-channel junction FETs
FEATURES High transfer admittance input capacitance feedback capacitance noise. APPLICATIONS Preamplifiers tuners radios. DESCRIPTION N-channel symmetrical junction field effect transistors SOT54 (TO-92) package.
handbook, halfpage
BF851A; BF851B; BF851C
MAM042
Fig.1 Simplified outline symbol. PINNING SOT54 (TO-92) SYMBOL gate source drain DESCRIPTION CAUTION device supplied antistatic package. gate-source input must protected against static discharge during transport handling.
QUICK REFERENCE DATA SYMBOL IDSS drain current BF851A BF851B BF851C Ptot total power dissipation forward transfer admittance BF851A BF851B BF851C Ciss Crss input capacitance reverse transfer capacitance Tamb PARAMETER drain-source voltage (DC) CONDITIONS MIN. MAX. UNIT
1995
Philips Semiconductors
Product specification
N-channel junction FETs
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 134). SYMBOL VGSO VDGO Ptot Tstg Note PARAMETER drain-source voltage (DC) gate-source voltage drain-gate voltage (DC) forward gate current (DC) total power dissipation storage temperature operating junction temperature open drain open source
BF851A; BF851B; BF851C
CONDITIONS Tamb note
MIN.
MAX. +150
UNIT
Device mounted epoxy printed-circuit board; maximum lead length mounting drain lead minimum mm2.
(mW)
MBD478
Tamb
Fig.2 Power derating curve.
1995
Philips Semiconductors
Product specification
N-channel junction FETs
THERMAL CHARACTERISTICS SYMBOL Note PARAMETER thermal resistance from junction ambient; note
BF851A; BF851B; BF851C
VALUE
UNIT
Device mounted epoxy printed-circuit board; maximum lead length mounting drain lead minimum mm2. CHARACTERISTICS unless otherwise specified. SYMBOL V(BR)GSS VGSoff PARAMETER gate-source cut-off voltage BF851A BF851B BF851C VGSS IDSS gate-source forward voltage drain current BF851A BF851B BF851C IGSS gate cut-off current forward transfer admittance BF851A BF851B BF851C common source output conductance BF851A BF851B BF851C Ciss Crss Vn/B input capacitance reverse transfer capacitance equivalent input noise voltage nV/Hz CONDITIONS -0.2 -0.5 -0.8 -1.5 MIN. TYP. MAX. UNIT gate-source breakdown voltage
1995
Philips Semiconductors
Product specification
N-channel junction FETs
BF851A; BF851B; BF851C
(mA)
MBD461
handbook, halfpage
MBD462
(µS)
GSoff
(mA)
Fig.3
Drain current function gate-source cut-off voltage; typical values.
Fig.4
Common-source output conductance function drain current; typical values.
handbook, halfpage
MBD463
MBD479
handbook, halfpage
(mS)
(mS)
BF851C BF851B
BF851A
(mA)
(mA)
Fig.5
Forward transfer admittance function drain current; typical values.
Fig.6
Forward transfer admittance function drain current; typical values.
1995
Philips Semiconductors
Product specification
N-channel junction FETs
BF851A; BF851B; BF851C
MBD465
MBD466
handbook, halfpage
(mA)
handbook, halfpage
(mA)
BF851A
BF851A
Fig.7 Typical input characteristics.
Fig.8 Typical output characteristics.
MBD467
MBD468
handbook, halfpage
(mA)
handbook, halfpage
(mA)
BF851B
BF851B
Fig.9 Typical input characteristics.
Fig.10 Typical output characteristics.
1995
Philips Semiconductors
Product specification
N-channel junction FETs
BF851A; BF851B; BF851C
MBD469
MBD470
handbook, halfpage
(mA)
handbook, halfpage
(mA)
BF851C
BF851C
Fig.11 Typical input characteristics.
Fig.12 Typical output characteristics.
handbook, halfpage
MBD471
(pF)
handbook, halfpage (nA)
MBD472
MHz.
Fig.13 Input reverse transfer capacitance functions gate-source voltage; typical values.
Fig.14 Gate current function drain-gate voltage; typical values.
1995
Philips Semiconductors
Product specification
N-channel junction FETs
BF851A; BF851B; BF851C
handbook, halfpage
MBD473
is,b (mS)
MBD474
(nV/
(Hz)
(MHz)
Tamb
Fig.15 Equivalent input noise function frequency; typical values.
Fig.16 Common-source input admittance; typical values.
handbook, halfpage grs,b (mS)
MBD475
handbook, halfpage
MBD476
(mS)
(MHz)
(MHz)
Tamb
Tamb
Fig.17 Common-source reverse admittance; typical values.
Fig.18 Common-source forward transfer admittance; typical values.
1995
Philips Semiconductors
Product specification
N-channel junction FETs
BF851A; BF851B; BF851C
os,bos (mS)
MBD477
(MHz)
Tamb
Fig.19 Common-source output admittance; typical values.
1995
Philips Semiconductors
Product specification
N-channel junction FETs
PACKAGE OUTLINE
BF851A; BF851B; BF851C
handbook, full pagewidth
0.40
12.7 0.48 0.40
2.54 0.66 0.56
MBC014
Dimensions Terminal dimensions within this zone uncontrolled allow flow plastic terminal irregularities.
Fig.20 SOT54 (TO-92).
1995
Philips Semiconductors
Product specification
N-channel junction FETs
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BF851A; BF851B; BF851C
This data sheet contains target goal specifications product development. This data sheet contains preliminary data; supplementary data published later. This data sheet contains final product specifications.
Limiting values given accordance with Absolute Maximum Rating System (IEC 134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Where application information given, advisory does form part specification. LIFE SUPPORT APPLICATIONS These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips customers using selling these products such applications their risk agree fully indemnify Philips damages resulting from such improper sale.
1995
Philips Semiconductors worldwide company
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other countries apply Philips Semiconductors, Marketing Sales Communications, Building BE-p, P.O. 218, 5600 EINDHOVEN, Netherlands, Fax. 24825 Philips Electronics N.V. 1996
Internet: CGY2020G_1.mif June 1996 11:51 SCA50
rights reserved. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice. liability will accepted publisher consequence use. Publication thereof does convey imply license under patent- other industrial intellectual property rights. Printed Netherlands
647021/1200/01/pp12 Date release: 1996 Document order number: 9397 00971
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