AO6408 uses advanced trench technology provide excellent RDS(ON) gate

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AO6408 uses advanced trench technology provide excellent RDS(ON) gate

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AO6408 N-Channel Enhancement Mode Field Effect Transistor
AO6408 uses advanced trench technology provide excellent RDS(ON) gate charge. offers operation over wide gate drive range from 1.8V 12V. protected. This device suitable load switch.
Features
8.8A RDS(ON) (VGS 10V) RDS(ON) (VGS 4.5V) RDS(ON) (VGS 2.5V) RDS(ON) (VGS 1.8V) Rating: 2000V
TSOP-6 View
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation
Maximum 1.28
Units
TA=25°C TA=70°C TA=25°C TA=70°C TSTG
Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead
Symbol Steady-State Steady-State
47.5
62.5
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
AO6408 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=16V, VGS=0V TJ=55°C VDS=0V, VGS=±10V VDS=0V, IG=±250uA VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=10V, ID=8.8A TJ=125°C RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=8A VGS=2.5V, ID=6A VGS=1.8V, ID=4A Forward Transconductance VDS=5V, ID=8.8A Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current 14.3 12.6 16.5 23.4 0.72 1810 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 17.9 VGS=4.5V, VDS=10V, ID=8.8A VGS=10V, VDS=10V, RL=1.1, RGEN=3 IF=8.8A, dI/dt=100A/µs 0.75 Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS BVGSO VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Source leakage current Gate-Source Breakdown Voltage Gate Threshold Voltage state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Total Gate Charge Gate Source Charge tD(on) tD(off) Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=8.8A, dI/dt=100A/µs
value measured with device mounted FR-4 board with 2oz. Copper, still environment with TA=25°C. value given application depends user's specific board design. current rating based thermal resistance rating. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures obtained using pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with TA=25°C. curve provides single pulse rating.
Alpha Omega Semiconductor, Ltd.
AO6408 TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
2.5V 4.5V VGS=1.5V (Volts) On-Region Characteristics VGS=1.8V Normalized On-Resistance VGS=2.5V,6A VGS=4.5V, 25°C VGS(Volts) Figure Transfer Characteristics 125°C
VDS=5V
RDS(ON)
VGS=2.5V VGS=4.5V
ID(A)
VGS=1.8V, VGS=10V, 8.8A
VGS=10V Figure On-Resistance Drain Current Gate Voltage
Temperature (°C) Figure On-Resistance Junction Temperature 1.0E+01 1.0E+00
RDS(ON)
ID=6A 1.0E-01
125°C
125°C
1.0E-02 1.0E-03 25°C
25°C
1.0E-04 1.0E-05
(Volts) Figure On-Resistance Gate-Source Voltage
(Volts) Figure Body-Diode Characteristics
Alpha Omega Semiconductor, Ltd.
AO6408 TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
2800 (Volts) (nC) Figure Gate-Charge Characteristics VDS=10V ID=8.8A Capacitance (pF) 2400 2000 1600 1200 (Volts) Figure Capacitance Characteristics Coss Ciss
Crss
100.0 10µs 10.0 (Amps) RDS(ON) limited 100µs 10ms 0.1s TJ(Max)=150°C TA=25°C (Volts) Figure Maximum Forward Biased Safe Operating Area (Note 0.001 Power TJ(Max)=150°C TA=25°C
0.01
1000
Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse 0.01 0.00001 0.0001 0.001 0.01
1000
Pulse Width Figure Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.
ALPHA OMEGA
SEMICONDUCTOR, INC.
TSOP-6 Package Data
SYMBOLS
DIMENSIONS MILLIMETERS
1.00 0.00 1.00 0.35 0.10 2.70 2.60 1.60
0.37
1.10 0.40 0.13 2.90 2.80 1.80 0.95 1.90
1.25 0.10 1.15 0.50 0.20 3.10 3.00 2.00
PACKAGE MARKING DESCRIPTION
SEATING PLANE
NOTE: LEAD FINISH: MICROINCHES MIN. THICKNESS Tin/Lead (SOLDER) PLATED LEAD TOLERANCE ±0.100 mil) UNLESS OTHERWISE SPECIFIED COPLANARITY 0.1000 DIMENSION MEASURED GAGE PLANE
GAUGE PLANE
RECOMMENDED LAND PATTERN
TSOP-6 PART CODE
PART
CODE
PNDLN
AO6408
NOTE: PART NUMBER CODE. YAER WEEK CODE. ASSEMBLY CODE, ASSEMBLY LOCATION CODE.
ALPHA OMEGA
SEMICONDUCTOR, INC.
TSOP-6 Carrier Tape
TSOP-6 Tape Reel Data
TSOP-6 Reel
TSOP-6 Tape
Leader Trailer Orientation

AO6408 uses advanced trench technology provide excellent RDS(ON) gate

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