AO4410 uses advanced trench technology provide excellent RDS(ON), shoo

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AO4410 uses advanced trench technology provide excellent RDS(ON), shoo

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AO4410, AO4410L (Lead-Free) N-Channel Enhancement Mode Field Effect Transistor
AO4410 uses advanced trench technology provide excellent RDS(ON), shoot-through immunity, body diode characteristics ultra-low gate resistance. This device ideally suited side switch Notebook core power conversion. AO4410L offered lead-free package.
Features
RDS(ON) 5.5m (VGS 10V) RDS(ON) 6.2m (VGS 4.5V)
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation
Maximum
Units
TA=25°C TA=70°C TA=25°C TA=70°C TSTG
Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead
Symbol Steady-State Steady-State
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
AO4410, AO4410L
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=15A Forward Transconductance VDS=5V, ID=18A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±12V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=10V, ID=18A TJ=125°C 0.64 9130 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 72.4 13.4 16.8 22.2 10500 0.005 Units
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Gate Source Charge Gate Drain Charge tD(on) Turn-On DelayTime tD(off) Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
VGS=10V, VDS=15V, ID=18A
VGS=10V, VDS=15V, RL=0.83, RGEN=3
IF=18A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=18A, dI/dt=100A/µs
19.5
value measured with device mounted 1in2 FR-4 board with 2oz. Copper, still environment with TA=25°C. value given application depends user's specific board design. current rating based thermal resistance rating. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures obtained using pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with TA=25°C. curve provides single pulse rating.
Alpha Omega Semiconductor, Ltd.
AO4410, AO4410L
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
2.5V (Volts) On-Region Characteristics Normalized On-Resistance VGS=4.5V ID=18A VGS=4.5V ID(A) VGS=2V VGS(Volts) Figure Transfer Characteristics 125°C 25°C VDS=5V
RDS(ON)
VGS=10V
VGS=10V
Figure On-Resistance Drain Current Gate Voltage
Temperature (°C) Figure On-Resistance Junction Temperature 1.0E+02 1.0E+01
RDS(ON)
ID=18A 125°C
1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04
125°C
25°C
25°C
(Volts) Figure On-Resistance Gate-Source Voltage
1.0E-05 (Volts) Figure Body-Diode Characteristics
Alpha Omega Semiconductor, Ltd.
AO4410, AO4410L
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
(Volts) (nC) Figure Gate-Charge Characteristics 100000 VDS=15V ID=18A Capacitance (pF) 10000 Ciss
1000 Crss
Coss
(Volts) Figure Capacitance Characteristics
100.0 RDS(ON) limited 10ms (Amps) 10.0 0.1s TJ(Max)=150°C TA=25°C (Volts) Figure Maximum Forward Biased Safe Operating Area (Note 100µs Power 10µs
0.001
TJ(Max)=150°C TA=25°C
0.01
1000
Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse 0.01 0.00001 0.0001 0.001 0.01
1000
Pulse Width Figure Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.
ALPHA OMEGA
SEMICONDUCTOR, INC.
SO-8 Package Data
DIMENSIONS MILLIMETERS SYMBOLS
DIMENSIONS INCHES
1.45 0.00 0.33 0.19 4.80 3.80 5.80 0.25 0.40
1.50 1.45 1.27
1.55 0.10 0.51 0.25 5.00 4.00 6.20 0.50 1.27 0.10
0.057 0.000 0.013 0.007 0.189 0.150 0.228 0.010 0.016
0.059 0.057 0.050
0.061 0.004 0.020 0.010 0.197 0.157 0.244 0.020 0.050 0.004
NOTE: LEAD FINISH: MICROINCHES MIN. THICKNESS Tin/Lead (SOLDER) PLATED LEAD TOLERANCE 0.10 mil) UNLESS OTHERWISE SPECIFIED COPLANARITY 0.10 DIMENSION MEASURED GAGE PLANE
PACKAGE MARKING DESCRIPTION
RECOMMENDED LAND PATTERN
LOGO FAYWLC
NOTE: LOGO 4410
LOGO PART NUMBER CODE. LOCATION ASSEMBLY LOCATION YEAR CODE WEEK CODE. ASSEMBLY CODE
SO-8 PART CODE
UNIT:
PART AO4410
CODE 4410
Rev.
Document
PD-00199
ALPHA OMEGA
SEMICONDUCTOR, INC.
Version
Title
AO4410L Package Data Sheet
SO-8 LEAD FREE
SYMBOLS
DIMENSIONS MILLIMETERS
DIMENSIONS INCHES
1.45 0.00 0.33 0.19 4.80 3.80 5.80 0.25 0.40
1.50 1.45 1.27
1.55 0.10 0.51 0.25 5.00 4.00 6.20 0.50 1.27 0.10
0.057 0.000 0.013 0.007 0.189 0.150 0.228 0.010 0.016
0.059 0.057 0.050
0.061 0.004 0.020 0.010 0.197 0.157 0.244 0.020 0.050 0.004
NOTE: LEAD FINISH: LEAD FREE COATING TOLERANCE ±0.10 mil) UNLESS OTHERWISE SPECIFIED COPLANARITY 0.10 DIMENSION MEASURED GAGE PLANE
PACKAGE MARKING DESCRIPTION
RECOMMENDED LAND PATTERN
NOTE: LOGO LOGO 4410 PART NUMBER CODE,Lead_Free LOCATION ASSEMBLY LOCATION YEAR CODE WEEK CODE. ASSEMBLY CODE
SO-8 PART CODE
UNIT:
PART CODE AO4410L 4410
ALPHA OMEGA
SEMICONDUCTOR, INC.
SO-8 Carrier Tape
SO-8 Tape Reel Data
SO-8 Reel
SO-8 Tape
Leader Trailer Orientation

AO4410 uses advanced trench technology provide excellent RDS(ON), shoo

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