Phototransistor, view type RPT-34PB3F RPT-34PB3F silicon pla

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Phototransistor, view type RPT-34PB3F RPT-34PB3F silicon pla

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RPT-34PB3F
Phototransistor, view type
RPT-34PB3F
RPT-34PB3F silicon planar phototransistor. particularly suited with ROHM SIR-34ST3F infrared light emitting diode.
!Applications Optical control equipment
!External dimensions (Units
3.8±0.3 3.1±0.2
5.2±0.3
!Features High sensitivity.
Notes Unspecfied tolerance shall ±0.2. Dimension parenthesis show reference.
2-0.6 2-0.5
24.0Min.
(2.5)
2.5±1.0
Max.
Internal connection diagram
Emitter
Collector
!Absolute maximum ratings 25°C)
Parameter Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissipation Operating temperature Storage temperature Symbol VCEO VECO Topr Tstg Limits -25~+85 -30~+100 Unit
!Electrical optical characteristics 25°C)
Parameter Light current Dark current Peak sensitivity wavelength Collector-emitter saturation voltage Half-angle Response time Symbol ICEO Min. Typ. Max. Unit Conditions VCE=5V, E=500LX VCE=10V(Black box) IC=1mA, E=500LX VCC=5V, IC=1mA, RL=100
VCE(sat)
RPT-34PB3F
!Electrical optical characteristic curves
RELATIVE COLLECTOR CURRENT
1000
COLLECTOR CURRENT (mA)
VCE=5V
1000
DARK CURRENT ICEO (nA)
VCE=10V VCE=20V VCE=30V
1000
1250
AMBIENT TEMPERATURE (°C)
AMBIENT TEMPERATURE (°C)
ILLUMINANCE (Lx)
Fig.1 Dark current ambient temperature
Fig.2 Relative output ambient temperature
Fig.3 Light current irradiance
COLLECTOR CURRENT (mA)
COLLECTOR DISSIPATION (mW)
RELATIVE SENSITIVITY
E=1000Lux 750Lux
500Lux 250Lux
1000 1100
COLLECTOR-EMITTER VOLTAGE
OPTICAL WAVELENGTH (nm)
AMBIENT TEMPERATURE (°C)
Fig.4 Output characteristics
Fig.5 Spectral sensitivity
Fig.6 Collector dissipation ambient temperature
1000
RL=1k RL=500
RELATIVE LUMINOUS INTENSITY ANGULAR DISPLACEMENT (deg)
RL=100
COLLECTOR CURRENT (mA)
Fig.7 Response time collector current
Fig.8 Directional pattern
RELATIVE LUMINOUS INTENSITY:
Ta=25°C VCE=5V
RESPONSE TIME (µs)
Appendix
Notes
technical content pages this document reproduced form transmitted means without prior permission ROHM CO.,LTD. contents described herein subject change without notice. specifications product described this document reference only. Upon actual use, therefore, please request that specifications separately delivered. Application circuit diagrams circuit constants contained herein shown examples standard operation. Please careful attention peripheral conditions when designing circuits deciding upon circuit constants set. data, including, limited application circuit diagrams information, described herein intended only illustrations such devices specifications such devices. ROHM CO.,LTD. disclaims warranty that such devices shall free from infringement third party's intellectual property rights other proprietary rights, further, assumes liability whatsoever nature event such infringement, arising from connected with related such devices. Upon sale such devices, other than buyer's right such devices itself, resell otherwise dispose same, express implied right license practice commercially exploit intellectual property rights other proprietary rights owned controlled ROHM CO., LTD. granted such buyer. Products listed this document silicon basic material. Products listed this document antiradiation design.
products listed this document designed used with ordinary electronic equipment devices (such audio visual equipment, office-automation equipment, communications devices, electrical appliances electronic toys). Should intend these products with equipment devices which require extremely high level reliability malfunction with would directly endanger human life (such medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers other safety devices), please sure consult with sales representative advance. About Export Control Order Japan Products described herein objects controlled goods Annex (Item Export Trade Control Order Japan. case export from Japan, please confirm applies "objective" criteria "informed" MITI clause) basis "catch controls Non-Proliferation Weapons Mass Destruction.
Appendix1-Rev1.0

Phototransistor, view type RPT-34PB3F RPT-34PB3F silicon pla

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