QUAD/DUAL EPAD® PRECISION MATCHED PAIR N-CHANNEL MOSFET ARRAY BEN

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QUAD/DUAL EPAD® PRECISION MATCHED PAIR N-CHANNEL MOSFET ARRAY BEN

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ALD1108E/ALD1110E
QUAD/DUAL EPAD® PRECISION MATCHED PAIR N-CHANNEL MOSFET ARRAY
BENEFITS
Electrically Programmable Analog Device
CMOS Technology Operates from Flexible basic circuit building block design element Very high resolution average e-trim voltage resolution 0.1mV Wide dynamic range current levels from 0.1µA 3000µA Voltage adjustment range from 1.000V 3.000V 0.1mV steps Proven, non-volatile CMOS technology Typical years drift less than Usable voltage mode current mode High input impedance 1012 Very high current gain greater than Device operating current positive temperature coefficient range negative temperature coefficient range with cross-over zero temperature coefficient current level 68µA Tight matching tracking on-resistance between different devices with e-trim Wide dynamic resistance matching range Very input currents leakage currents cost, monolithic technology Application-specific in-system programming modes Optional user software-controlled automation Optional e-trim standard/custom configuration Micropower operation Available standard PDIP, SOIC hermetic CDIP packages Suitable matched-pair balanced circuit configuration Suitable both coarse fine trimming well matched MOSFET array applications
Precision matched electrically after packaging Simple, elegant single-chip user option
trim voltage/current values
Excellent device matching characteristics with
without additional electrical trim
Remotely electrically trim parameters
circuits that physically inaccessible
Usable environmentally sealed circuits mechanical moving parts high G-shock
tolerance
Improved reliability, dependability, dust
moisture resistance
Cost labor savings Small footprint high board density
applications
CONFIGURATION
ALD1108E VDN4
ORDERING INFORMATION
Operating Temperature Range* -55°C +125°C +70°C +70°C 16-Pin CERDIP Package ALD1108E 16-Pin Plastic Package ALD1108E 16-Pin SOIC Package ALD1108E
S12,
PACKAGE
CONFIGURATION
ALD1110E
Operating Temperature Range* -55°C +125°C +70°C +70°C 8-Pin CERDIP Package ALD1110E 8-Pin Plastic Package ALD1110E 8-Pin SOIC Package ALD1110E
PACKAGE
Contact factory industrial temperature range
2003 11/03 Advanced Linear Devices, Inc. Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 www.aldinc.com
APPLICATIONS
GENERAL DESCRIPTION
ALD1108E/ALD1110E monolithic quad/dual EPAD® (Electrically Programmable Analog Device) N-channel MOSFETs with electrically adjustable threshold (turn-on) voltage. ALD1108E/ALD1110E matched adjusted (etrimmed) factory resulting quad/dual MOSFETs that highly matched threshold voltages other electrical characteristics. given input voltage, threshold voltage MOSFET device determines drain oncurrent, resulting on-resistance characteristic that precisely preset then controlled input voltage very accurately. Using ALD1108E/ALD1110E simple straight forward. MOSFETs function n-channel MOSFETs except that devices have exceptional matching each other electrical characteristics. Since these devices same monolithic chip, they also exhibit excellent tempco matching characteristics. These MOSFET devices have very input currents, result very high input impedance (>10 Ohm). gate voltage from control source drive many MOSFET inputs with practically loading effects. Used precision current mirror current multiplier applications, they used provide current source over range, with either positive, negative zero tempco. Optional EPAD Threshold Voltage Trimming User basic EPAD MOSFET device monotonically adjustable device which means device normally e-trimmed increase threshold voltage decrease drain-on current function given input bias voltage. Used in-circuit element trimming setting combination voltage, current and/or on-resistance characteristics, e-trimmed remotely automatically. Once e-trimmed voltage current levels stored indefinitely inside device nonvolatile stored charge, which affected during normal operation device, even when power turned off. given EPAD device adjusted many times continually increase threshold voltage. pair EPAD devices also connected differentially such that device used adjust parameter direction other device used adjust same parameter other direction. ALD1108E/ALD1110E e-trimmed with EPAD programmer obtain desired voltage current levels. they e-trimmed active in-system element user system, user designed interface circuitry. PN1, PN2, etc., pins required optional e-trim respective MOSFET devices. unused, these pins connected ground. more information, Application Note AN1108. ALD1108E
V+(13)
Precision PC-based electronic calibration Automated voltage trimming setting Remote voltage current adjustment
inaccessible nodes
PCMCIA based instrumentation trimming Electrically adjusted resistive load Temperature compensated current sources
current mirrors
Electrically trimmed/calibrated current
sources
Permanent precision preset voltage level
shifter temperature coefficient voltage and/or current bias circuits Multiple preset voltage bias circuits Multiple channel resistor pull-up pull-down circuits Microprocessor based process control systems Portable data acquisition systems Battery operated terminals instruments Remote telemetry systems E-trim gain amplifiers level signal conditioning Sensor transducer bias currents Neural networks
BLOCK DIAGRAM
ALD1110E
V+(5)
GN1(2)
BLOCK DIAGRAM
GN1(2)
ALD1108E/ALD1110E
Advanced Linear Devices
(14)
(16)
(11)
(15) GN3(10)
(12)
ABSOLUTE MAXIMUM RATINGS
Supply voltage, referenced VSupply voltage, referenced VDifferential input voltage range Power dissipation Operating temperature range package package Storage temperature range Lead temperature, seconds -0.3V +13.2V ±6.6V 0.3V +0.3V +70°C -55°C +125°C -65°C +150°C +260°C
OPERATING ELECTRICAL CHARACTERISTICS 25°C +5.0V unless otherwise specified
ALD1108E Parameter Supply Voltage Initial Threshold Voltage E-trim Range Drain Gate Connected Voltage Tempco Symbol TCVDS 0.990 1.000 -1.6 -0.3 +2.7 Initial Offset Voltage 1.000 10.0 1.010 3.000 0.990 1.000 -1.6 -0.3 +2.7 1.000 ALD1110E 10.0 1.010 3.000 Unit mV/°C mV/°C mV/°C mV/°C 50µA 68µA 500µA 21°C Test Conditions
Tempco Differential Threshold Voltage Tempco Differential Threshold Voltage Long Term Drift Long Term Drift Match Drain Source Current
TCVOS
2.000
2.000
µV/°C
VDS1 VDS2
TCDV IDS(ON)
0.033 -0.02 -0.05
0.033 -0.02 -0.05
mV/°C 1000 Hours 1000 Hours
Drain Source Current
IDS(ON)
1.000V
Initial Zero Tempco Voltage Zero Tempco Current Initial On-Resistance On-Resistance Match
VZTCi IZTC
1.52
1.52
0.1V
NOTES: Supply voltage limited Threshold Voltage. must most positive supply rail must most negative supply rail. Source terminals other than those labeled voltage between Initial Threshold Voltage factory. EPAD trimming intended user, then this also final permanent threshold voltage value. Initial Final values same unless deliberately changed user. These parameters apply only when more devices changed user.
ALD1108E/ALD1110E
Advanced Linear Devices
OPERATING ELECTRICAL CHARACTERISTICS (cont'd) 25°C +5.0V unless otherwise specified
ALD1108E Parameter Transconductance Transconductance Match Level Output Conductance High Level Output Conductance Drain Leakage Current Symbol ALD1110E Unit mA/V µA/V Test Conditions 10V,VG 10V,VG
µA/V
+0.5V
ID(OFF)
µA/V Hours
+4.0V
125°C
Gate Leakage Current
IGSS
125°C
Input Capacitance Cross Talk Relaxation Time Constant Relaxation Voltage
CISS
-0.3
100KHz
tRLX VRLX
-0.3
1.0V 3.0V
E-TRIM CHARACTERISTICS 25°C +5.0V unless otherwise specified
Parameter E-trim Range Resolution E-trim Pulse Step Change E-trim Pulse 0.05 0.05 pulse 1.0V 2.5V
Symbol
1.000
ALD1108E
3.000
ALD1110E
3.000
Unit
Test Conditions
1.000
E-trim Pulse Voltage E-trim Pulse Current Pulse Frequency
pulse
11.75
12.00
12.25
11.75
12.00
12.25
ALD1108E/ALD1110E
Advanced Linear Devices
TYPICAL PERFORMANCE CHARACTERISTICS
OUTPUT CHARACTERISTICS
OUTPUT CHARACTERISTICS
+1.0
DRAIN SOURCE CURRENT (mA)
+25°C
DRAIN SOURCE CURRENT (mA)
+12V +10V
+25°C
+12V +10V
-1.0 -200 -160 -120 +200
DRAIN SOURCE VOLTAGE
DRAIN SOURCE VOLTAGE (mV)
DRAIN SOURCE CURRENT AMBIENT TEMPERATURE
DRAIN SOURCE CURRENT (mA)
3.0V 1.0V 1.5V 2.0V 2.5V
DRAIN SOURCE CURRENT THRESHOLD VOLTAGE
+25°C +5.0V
DRAIN SOURCE CURRENT (mA)
AMBIENT TEMPERATURE (°C)
THRESHOLD VOLTAGE
TRANSCONDUCTANCE THRESHOLD VOLTAGE
+25°C
HIGH LEVEL OUTPUT CONDUCTANCE vs.THRESHOLD VOLTAGE
HIGH LEVEL OUTPUT CONDUCTANCE (µA/V)
TRANSCONDUCTANCE mA/V)
+25°C
4.0V
4.0V 5.0V
THRESHOLD VOLTAGE
THRESHOLD VOLTAGE
ALD1108E/ALD1110E
Advanced Linear Devices
TYPICAL PERFORMANCE CHARACTERISTICS
THRESHOLD VOLTAGE AMBIENT TEMPERATURE
1.0µA 3.0V 2.5V 2.0V 1.5V 1.0V
LEVEL OUTPUT CONDUCTANCE AMBIENT TEMPERATURE
0.5V 5.0V
THRESHOLD VOTAGE
LEVEL OUTPUT CONDUCTANCE(µA/V)
AMBIENT TEMPERATURE (°C)
AMBIENT TEMPERATURE (°C)
DRAIN LEAKAGE CURRENT (pA)
TRANSCONDUCTANCE AMBIENT TEMPERATURE
TRANSCONDUCTANCE (mA/V)
DRAIN LEAKAGE CURRENT AMBIENT TEMPERATURE
AMBIENT TEMPERATURE (°C)
AMBIENT TEMPERATURE (°C)
HIGH LEVEL OUTPUT CONDUCTANCE AMBIENT TEMPERATURE
LEVEL CURRENT OUTPUT CONDUCTANCE (µA/V)
LEVEL OUTPUT CONDUCTANCE THRESHOLD VOLTAGE
+25°C
HIGH LEVEL OUTPUT CONDUCTANCE (mA/V)
4.0V 5.0V
0.5V 5.0V
AMBIENT TEMPERATURE (°C)
THRESHOLD VOTAGE
ALD1108E/ALD1110E
Advanced Linear Devices
TYPICAL PERFORMANCE CHARACTERISTICS
DRAIN SOURCE CURRENT, BIAS CURRENT AMBIENT TEMPERATURE
DRAIN SOURCE CURRENT (mA)
DRAIN SOURCE CURRENT, BIAS CURRENT AMBIENT TEMPERATURE
DRAIN SOURCE CURRENT
Zero Temperature Coefficient (ZTC) 125°C
-55°C -25°C
125°C
125°C
1.0V
25°C
1.2V 25°C
1.4V 25°C
70°C
125°C
GATE DRAIN SOURCE VOLTAGE (VGS VDS)
GATE DRAIN SOURCE VOLTAGE (VGS VDS)
CHANGE DIFFERENTIAL THRESHOLD VOLTAGE AMBIENT TEMPERATURE
DRAIN SOURCE CURRENT, BIAS CURRENT (µA)
CHANGE DIFFERENTIAL THRESHOLDVOLTAGE (mV)
10000
REPRESENTATIVE UNITS
DRAIN SOURCE CURRENT, BIAS CURRENT RESISTANCE
IDS(ON) +0.9V +5.0V 5.0V IDS(ON) 0.5V
1000
1000
10000
AMBIENT TEMPERATURE (°C)
RESISTANCE
GATE SOURCE VOLTAGE DRAIN SOURCE CURRENT
DRAIN SOURCE CURRENT OUTPUT VOLTAGE
DRAIN SOURCE CURRENT (mA)
GATE SOURCE VOLTAGE
IDS(ON)
0.5V +125°C
1.000V -55°C
0.5V +25°C
+50°C +125°C
+25°C IDS(ON) +125°C
1000
10000
DRAIN SOURCE CURRENT (µA)
OUTPUT VOLTAGE
ALD1108E/ALD1110E
Advanced Linear Devices
TYPICAL PERFORMANCE CHARACTERISTICS
OFFSET VOLTAGE AMBIENT TEMPERATURE
REPRESENTATIVE UNITS
GATE LEAKAGE CURRENT (pA)
GATE LEAKAGE CURRENT AMBIENT TEMPERATURE
IGSS
OFFSET VOLTAGE (mV)
AMBIENT TEMPERATURE (°C)
AMBIENT TEMPERATURE (°C)
GATE SOURCE VOLTAGE RESISTANCE
GATE SOURCE VOLTAGE
+125°C +25°C IDS(ON)
DRAIN GATE DIODE CONNECTED VOLTAGE TEMPCO DRAIN SOURCE CURRENT
DRAIN- GATE DIODE CONNECTED VOLTAGE TEMPCO (mV/
-55°C +125°C
0.0V 5.0V
-2.5
1000 10000
1000
RESISTANCE
DRAIN SOURCE CURRENT (µA)
ALD1108E/ALD1110E
Advanced Linear Devices

QUAD/DUAL EPAD® PRECISION MATCHED PAIR N-CHANNEL MOSFET ARRAY BEN

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