AGR18045E high-voltage, gold-metallized, laterally diffused metal oxid

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AGR18045E high-voltage, gold-metallized, laterally diffused metal oxid

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AGR18045E 1.805 GHz-1.880 GHz, LDMOS Power Transistor
AGR18045E high-voltage, gold-metallized, laterally diffused metal oxide semiconductor (LDMOS) power field effect transistor (FET) suitable global system mobile communication (GSM), enhanced data global evolution (EDGE), multicarrier class power amplifier applications. This device manufactured using advanced LDMOS technology offering state-of-the-art performance reliability. packaged industrystandard package capable delivering minimum output power which makes ideally suited today's power amplifier applications. Table Thermal Characteristics Parameter Thermal Resistance, Junction Case Value Unit °C/W
Table Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Drain Current Continuous Total Dissipation Derate Above Operating Junction Temperature Storage Temperature Range Value VDSS -0.5, 0.67 TSTG -65, Unit W/°C
Figure Available (flanged) Package
Features
Stresses excess absolute maximum ratings cause permanent damage device. These absolute stress ratings only. Functional operation device implied these other conditions excess those given operational sections data sheet. Exposure absolute maximum ratings extended periods adversely affect device reliability.
Typical performance ratings EDGE 1.840 GHz, POUT Error vector magnitude (EVM): 1.9% Power gain: Drain efficiency: Modulation spectrum: ±400 dBc. ±600 dBc. Typical continuous wave (CW) performance over entire digital communication system (DCS) band: P1dB: typical (typ). Power gain: P1dB Efficiency: P1dB typ. Return loss: High-reliability, gold-metallization process. carrier injection (HCI) induced bias drift over years. Internally matched. High gain, efficiency, linearity. Integrated protection. minimum output power. Device withstand 10:1 voltage standing wave ratio (VSWR) Vdc, 1.840 GHz, output power. Large signal impedance parameters available.
Table Rating* AGR18045E Minimum 1500 Class
Although electrostatic discharge (ESD) protection circuitry been designed into this device, proper precautions must taken avoid exposure electrical overstress (EOS) during handling, assembly, test operations. Agere employs human-body model (HBM), machine model (MM), charged-device model (CDM) qualification requirement order determine ESD-susceptibility limits protection design evaluation. voltage thresholds dependent circuit parameters used each models, defined JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), JESD22-C101A (CDM) standards. Caution: devices susceptible damage from electrostatic charge. Reasonable precautions handling packaging devices should observed.
AGR18045E 1.805 GHz-1.880 GHz, LDMOS Power Transistor
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: Table Characteristics Parameter Characteristics Drain-source Breakdown Voltage (VGS Gate-source Leakage Current (VGS Zero Gate Voltage Drain Leakage Current (VDS Characteristics Forward Transconductance (VDS Gate Threshold Voltage (VDS Gate Quiescent Voltage (VDS Drain-source On-voltage (VGS Table Characteristics Parameter Drain-to-gate Capacitance (VDS MHz) Drain-to-source Capacitance (VDS MHz) Power Gain (VDS POUT Drain Efficiency (VDS POUT EDGE Linearity Characterization (POUT 1.840 GHz, Modulation spectrum ±400 Modulation spectrum ±600 Output Power (VDS gain compression, Input Return Loss Ruggedness (VDS POUT VSWR 10:1 [all angles])
Across full band, 1.805 GHz-1.880 GHz.
Symbol
Unit
V(BR)DSS IGSS IDSS VGS(TH) VGS(Q) VDS(ON)
0.22
µAdc µAdc
Symbol Dynamic Characteristics CRSS COSS
Unit
Functional Tests* Agere Systems Supplied Test Fixture)
P1dB
degradation output power.
Agere Systems Inc.
AGR18045E 1.805 GHz-1.880 GHz, LDMOS Power Transistor
Test Circuit Illustrations AGR18045E
OUTPUT
PINS: DRAIN, SOURCE, GATE
INPUT
Schematic
Parts List: Microstrip line: 0.840 0.066 in.; 0.598 0.066 in.: 0.135 0.866 in.; 0.175 0.866 in.; 0.148 0.650 in.; 0.212 0.650 in.; 0.190 0.320 in.; 0.200 0.140 in.; 0.253 0.066 in.; 0.745 0.066 in.; 0.050 0.820 in.; 0.050 0.950 chip capacitors: 600F200JT250; 100B100JW500; 600F8R2CT250. Murata chip capacitors: 0.047 LLL317R71H473KD01L; 0.01 GRM216R71H103KA01; GRM21BR71H104KA01. Sprague tantalum surface-mount chip capacitors: C10: T495X226KO3SAS. Vishay 1206 size chip resistor: CRCW12064R75F100. Amphenol connectors: 901-10019. WECO connector: 140-A-524-SMD/6. Fair-Rite ferrite bead: FB1: 2743019447. Taconic ORCER RF-35: board material, copper, thickness, 3.5.
Component Layout Figure AGR18045E Test Circuit
Agere Systems Inc.
AGR18045E 1.805 GHz-1.880 GHz, LDMOS Power Transistor
Typical Performance Characteristics
0.49 0.48
RESISTANCE COMPONENT (R/Zo), CONDUCTANCE COMPONENT (G/Yo)
0.49
-170 -160
0.48
(-jB
1.805 (f1) 1.843 (f2) 1.880 (f3)
(Complex Source Impedance) (Complex Optimum Load Impedance) 3.33 j7.50 5.76 j3.74 3.18 j7.14 5.53 j3.45 3.03 j6.88 5.34 j3.24 DRAIN SOURCE
GATE
INPUT MATCH
OUTPUT MATCH
Figure Series Equivalent Input Output Impedances
Agere Systems Inc.
0.35
0.15
0.36
0.14
0.37
0.13
0.12
0.38
0.11 -100
0.39
-110
0.25 0.24 0.27 0.23 0.25 0.24 0.26 0.23 0.27 REFL ECTI COEFFI REES COEFFI
AGR18045E 1.805 GHz-1.880 GHz, LDMOS Power Transistor
Typical Performance Characteristics (continued)
POUT
(W)Z
TEST CONDITIONS: 1842.5 MHz, MEASUREMENT.
Figure Output Power Efficiency Input Power
(dB)Z POUT (W)Z
TEST CONDITIONS: 1842.5 MHz, MEASUREMENT.
10.0
100.0
1000.0
Figure Power Gain Output Power Agere Systems Inc.
DRAIN EFFICIENCY (%)Z
POUT (W)Z
AGR18045E 1.805 GHz-1.880 GHz, LDMOS Power Transistor
Typical Performance Characteristics (continued)
16.0 15.5 15.0 14.5 14.0 13.5 13.0 12.5 12.0 11.5 11.0 1750 1950
(dB)Z
1770
1790
1810
1830
1850
1870
1890
1910
1930
FREQUENCY (MHz)Z
TEST CONDITIONS: dBm, MEASUREMENT.
Figure Wideband Gain Return Loss
16.0 15.5 15.0 14.5 (dB)Z 14.0 13.5 13.0 12.5 12.0 POUT (PEP)Z
TEST CONDITIONS: 1842.5 MHz, TWO-TONE MEASUREMENT, SPACING.
10.0
100.0
Figure Tone Power Gain Output Power Agere Systems Inc.
(dB)Z
AGR18045E 1.805 GHz-1.880 GHz, LDMOS Power Transistor
Typical Performance Characteristics (continued)
-20.0 -25.0 -30.0 -35.0 IMD3 (dBc) -40.0 -45.0 -50.0 -55.0 -60.0 POUT (PEP)A
TEST CONDITIONS: 1842.5 MHz, TWO-TONE MEASUREMENT, SPACING.
10.0
100.0
Figure Intermodulation Distortion Output Power
(dB), DRAIN EFFICIENCY (%)Z POUT (W)Z
TEST CONDITIONS: 1842.5 MHz, EDGE MODULATION.
100.0 SPECTRAL REGROWTH (dBc)Z
10.0
Figure Power Gain, Efficiency, Spectral Regrowth Output Power Agere Systems Inc.
AGR18045E 1.805 GHz-1.880 GHz, LDMOS Power Transistor
Typical Performance Characteristics (continued)
(dB), DRAIN EFFICIENCY (%)Z 10.0 POUT (W)Z
TEST CONDITIONS: 1842.5 MHz, EDGE MODULATION.
100.0 RMS)Z
Figure Power Gain, Efficiency, Output Power
Agere Systems Inc.
AGR18045E 1.805 GHz-1.880 GHz, LDMOS Power Transistor
Package Dimensions
dimensions inches. Tolerances ±0.005 unless specified.
AGR18045EF
PINS: DRAIN GATE SOURCE
AGERE AGERE AGR18045XU AGR21045F YYWWLL XXXXX YYWWLL ZZZZZZZ ZZZZZZZ
Label Notes: before part number denotes model program. before part number denotes engineering prototype.
last letters part number denote wafer technology package type. YYWWLL date code including place manufacture: year year work week (YYWW), location Allentown, Thailand). XXXXX five-digit wafer number. ZZZZZZZ seven-digit assembly number production parts. ZZZZZZZZZZZZ 12-digit (five-digit lot, two-digit wafer, five-digit serial number) models engineering prototypes.
Agere Systems Inc.
AGR18045E 1.805 GHz-1.880 GHz, LDMOS Power Transistor
Power Product Information
product application information, please visit website: http://www.agere.com/rfpower.
registered trademark American Technical Ceramics Corporation. WECO registered trademark Wester, Ebbinghaus Company. Sprague registered trademark Sprague Electric Company Corporation. Amphenol registered trademark Amphenol Corporation. Murata registered trademark Murata Electronics North America, Incorporated. Vishay registered trademark Intertechnology Incorporated. Fair-Rite registered trademark Fair-Rite Products Corporation. Taconic registered trademark Tonoga Limited Taconic Plastics Ltd.
additional information, contact your Agere Systems Account Manager following: INTERNET: http://www.agere.com E-MAIL: docmaster@agere.com AMERICA: Agere Systems Inc., Lehigh Valley Central Campus, Room 10A-301C, 1110 American Parkway Allentown, 18109-9138 1-800-372-2447, 610-712-4106 CANADA: 1-800-553-2448, 610-712-4106) ASIA: CHINA: (86) 21-54614688 (Shanghai), (86) 755-25881122 (Shenzhen) JAPAN: (81) 3-5421-1600 (Tokyo), KOREA: (82) 2-767-1850 (Seoul), SINGAPORE: (65) 6741-9855, TAIWAN: (886) 2-2725-5858 (Taipei) EUROPE: Tel. (44) 1344
Agere Systems Inc. reserves right make changes product(s) information contained herein without notice. liability assumed result their application. Agere registered trademark Agere Systems Inc. Agere Systems Agere logo trademarks Agere Systems Inc.
Copyright 2004 Agere Systems Inc. Rights Reserved
November 2004 DS03-186RFPP

AGR18045E high-voltage, gold-metallized, laterally diffused metal oxid

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