| The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers. |
Dual, Noise, High Performance Operational Amplifier noise high pe
Top Searches for this datasheetHA-5102/883 Dual, Noise, High Performance Operational Amplifier noise high performance words describing unity gain stable HA-5102/883. This general purpose dual amplifier offers array dynamic specifications including 1V/µs slew rate (min), AVCL 8MHz bandwidth (typ). Complementing these outstanding parameters very noise specification 4.3nV/Hz 1kHz (typ), 6nV/Hz (max). Fabricated using Intersil standard high frequency D.I. process, these operational amplifiers also offer excellent input specifications such 2.5mV (max) offset voltage 75nA (max) offset current. Complementing these specifications 100dB (min) open loop gain 60dB channel separation (min). Economically, HA-5102/883 also consumes very moderate amount supply power 180mW/ package. This impressive combination features make this amplifier ideally suited designs ranging from audio amplifiers active filters most demanding signal conditioning instrumentation circuits. July 1994 Features This Circuit Processed Accordance MIL-STD883 Fully Conformant Under Provisions Paragraph 1.2.1. Input Noise Voltage Density 1kHz 6nV/Hz (Max) 4.3nV/Hz (Typ) High Slew Rate .1V/µs (Min) 3V/µs (Typ) Unity Gain Bandwidth 8MHz (Typ) High Open Loop Gain (Full Temp) 100kV/V (Min) 250kV/V (Typ) High CMRR, PSRR (Full Temp). 86dB (Min) 100dB (Typ) Offset Voltage Drift 3µV/oC (Typ) Crossover Distortion Standard Dual Pinout Applications High Quality Audio Preamplifiers High Active Filters Noise Function Generators Distortion Oscillators Noise Comparators Ordering Information PART NUMBER HA2-5102/883 HA4-5102/883 HA7-5102/883 TEMPERATURE RANGE -55oC PACKAGE Lead Ceramic Lead CerDIP +125oC +125 +125oC Pinouts HA-5102/883 (CERDIP) VIEW HA-5102/883 (CLCC) VIEW HA-5102/883 (METAL CAN) VIEW OUT2 -IN2 +IN2 -IN1 +IN1 OUT1 -IN1 +IN1 OUT1 -IN1 -IN2 OUT2 OUT2 -IN2 +IN1 +IN2 V+IN2 CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. 1-888-INTERSIL 321-724-7143 Intersil (and design) trademark Intersil Americas Inc. Copyright Intersil Americas Inc. 2002. Rights Reserved Spec Number 511019-883 FN3709 Specifications HA-5102/883 Absolute Maximum Ratings Voltage Between Terminals Differential Input Voltage Voltage Either Input Terminal VPeak Output Current Indefinite (One Amplifier Shorted Ground) Junction Temperature (TJ) +175oC Storage Temperature Range -65oC +150oC Rating. <2000V Lead Temperature (Soldering 10s). +300oC Thermal Information Thermal Resistance CerDIP Package 115oC/W 28oC/W Ceramic Package 65oC/W 15oC/W Metal Package 67oC/W Package Power Dissipation Limit +75oC +175oC CerDIP Package 870mW Ceramic Package 1.54W Metal Package 645mW Package Power Dissipation Derating Factor Above +75oC CerDIP Package 8.7mW/oC Ceramic Package 15.4mW/oC Metal Package 6.5mW/oC CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied. Operating Conditions Operating Temperature Range. -55oC +125oC Operating Supply Voltage ±15V VINCM TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested VSUPPLY ±15V, RSOURCE 100, RLOAD 500k, VOUT Unless Otherwise Specified. GROUP SUBGROUPS Input Bias Current 10k, 100, 10k, +3V, -27V -CMR +27V, Large Signal Voltage Gain +AVOL VOUT +10V, VOUT -10V, +5V, +10V, -20V, VOUT -5V, +20V, -10V, VOUT LIMITS TEMPERATURE +125oC, -55oC PARAMETERS Input Offset Voltage SYMBOL CONDITIONS -2.0 -2.5 -200 UNITS kV/V kV/V kV/V kV/V +25oC +125 +25oC +125 +25oC +125 +25oC +125 -325 -200 -325 -125 Input Offset Current Common Mode Range +CMR +125oC, -55oC +125o -AVOL +125 +25o +125oC, -55oC Common Mode Rejection Ratio +CMRR -CMRR +25oC +125oC, -55oC Spec Number 511019-883 Specifications HA-5102/883 TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Tested VSUPPLY ±15V, RSOURCE 100, RLOAD 500k, VOUT Unless Otherwise Specified. GROUP SUBGROUPS -VOUT1 +VOUT2 -VOUT2 Output Current +IOUT VOUT -IOUT VOUT Quiescent Power Supply Current +ICC VOUT IOUT -ICC VOUT IOUT Power Supply Rejection Ratio +PSRR VSUP 10V, +10V, -15V +20V, -15V VSUP 10V, +15V, -10V +15V, -20V LIMITS TEMPERATURE +25oC +125o PARAMETERS Output Voltage Swing SYMBOL +VOUT1 CONDITIONS UNITS +125oC, -55oC +125 +25oC +125o +125oC, -55oC +25oC +125 +25oC +125oC, -5.0 -6.0 -55oC +125oC, -55oC +25oC +125 +25oC +125 -PSRR TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested VSUPPLY ±15V, RSOURCE RLOAD CLOAD 50pF, AVCL +1V/V, Unless Otherwise Specified. GROUP SUBGROUPS LIMITS TEMPERATURE +25oC +25oC +25oC +25oC +25oC +25oC UNITS V/µs V/µs PARAMETERS Slew Rate SYMBOL CONDITIONS VOUT VOUT VOUT +200mV VOUT -200mV VOUT +200mV VOUT -200mV Rise Fall Time Overshoot Spec Number 511019-883 Specifications HA-5102/883 TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS Device Characterized VSUPPLY ±15V, RLOAD CLOAD 50pF, AVCL 1V/V, Unless Otherwise Specified. LIMITS PARAMETERS Differential Input Resistance Input Noise Voltage Density Input Noise Current Density Full Power Bandwidth Minimum Closed Loop Stable Gain Output Resistance Quiescent Power Consumption Channel Separation SYMBOL FPBW CLSG ROUT CONDITIONS 1000Hz 1000Hz VPEAK 50pF Open Loop VOUT IOUT AVCL 100V/V, 100mVPEAK 10kHz Referred Input NOTES TEMPERATURE +25oC +25oC +25oC +25oC -55oC +125oC +25oC +125 +25oC UNITS nV/Hz pA/Hz NOTES: Parameters listed Table controlled design process parameters directly tested final production. These parameters characterized upon initial design release, upon design changes. These parameters guaranteed characterization based upon data from multiple production runs which reflect within variation. Full Power Bandwidth guarantee based Slew Rate measurement using FPBW Slew Rate/(2VPEAK). Quiescent Power Consumption based upon Quiescent Supply Current test maximum. load outputs.). TABLE ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS Interim Electrical Parameters (Pre Burn-In) Final Electrical Test Parameters Group Test Requirements Groups Endpoints NOTE: applies Subgroup only. SUBGROUPS (SEE TABLES (Note Spec Number 511019-883 HA-5102/883 Characteristics DIMENSIONS: 98.4 67.3 mils mils 2500 1710 483µm 25.4µm METALLIZATION: Type: Thickness: GLASSIVATION: Type: Nitride (Si3N4) over Silox (SiO2, Phos.) Silox Thickness: Nitride Thickness: WORST CASE CURRENT DENSITY: 1.43 105A/cm2 10mA SUBSTRATE POTENTIAL (Powered Up): Unbiased TRANSISTOR COUNT: PROCESS: Bipolar Dielectric Isolation Metallization Mask Layout HA-5102/883 V+IN1 -IN1 OUT1 +IN2 -IN2 OUT2 Intersil U.S. products manufactured, assembled tested utilizing ISO9000 quality systems. Intersil Corporation's quality certifications viewed www.intersil.com/design/quality Intersil products sold description only. Intersil Corporation reserves right make changes circuit design, software and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries. information regarding Intersil Corporation products, www.intersil.com Spec Number 511019-883 Other recent searchesXN01602G - XN01602G XN01602G Datasheet MPC7441 - MPC7441 MPC7441 Datasheet MCF5249 - MCF5249 MCF5249 Datasheet MAX9130 - MAX9130 MAX9130 Datasheet MAX9110 - MAX9110 MAX9110 Datasheet MAX9112 - MAX9112 MAX9112 Datasheet MAX9115 - MAX9115 MAX9115 Datasheet KTB2510 - KTB2510 KTB2510 Datasheet FHVR125G - FHVR125G FHVR125G Datasheet D44VH10 - D44VH10 D44VH10 Datasheet D45VH10 - D45VH10 D45VH10 Datasheet Am29LV160B - Am29LV160B Am29LV160B Datasheet
Privacy Policy | Disclaimer |