Dual General Purpose Transistors MBT3904DW1TI, MBT3906DW1T1, MBT3

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Dual General Purpose Transistors MBT3904DW1TI, MBT3906DW1T1, MBT3

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Order this document MBT3904DWlT1/D
Dual General Purpose Transistors
MBT3904DW1TI, MBT3906DW1T1, MBT3946DW1T1 devices spin-offs popular SOT-23/SOT-323 three-leaded devices. They designed general purpose amplifier a~lications housed SOT-363 six-leaded su~ace mount package. putting discrete devices package, these devices ideal low-power surface mount applications where board space premium. hFE, 100-300
vcE(sat),
MBT3904DWI MBT3906DWI MBT3946DWI
Simplifies Circuit Design Reduces Board Space Reduces Component Count Available 7-inch/3,000 Unit Tape Reel Y'!,>$* i~,f,,,, .,'.y$~,{, $.:,,,.: ~1.! "t,+ ,.~, ,~jt>, .$,-
CASE 419B41
STVLE
~,,:t. .,,, .:.,>.~,~.:,.,
MBT3904DW1
MBT3906DW1T1 MBT3946DW1T1*
%,~"*acteristic
Total Pac~@&b~pation(l ~5G&,~ ,.,r" 'h::. The@al~@istance :l~hc#&~and :.J~t},* .*:,$::,, i\:T$ ~,*, `:~':bevice
Symbol
Unit
Junction Amtient
RgJA Tstg
+150
Storage Temperature
mounted glass epo~ footprint.
printed circuit board using minimum
recommended
DEVICE MARKING
MBT3904DW1TI MBT3906DWITI MBT3946DW1T1 same MBT3906DW1TI same MBT3904DWI
Thermal Clad trademark Bergquist Company.
Motorola, Inc. 1996
`MBT3904DWITI
ELECTRICAL
MBT3906DW1T1
MBT3946DWIT1
CHARACTERISTICS
25°C unless otherwise noted)
Characteristic CHARACTERISTICS Collector-Emitter Breakdown Voltage(2) mAdc, -1.0 mAdc, Collector-Base Breakdown Voltage (1C= @de, ~Adc, Emitter-Base Breakdown Voltage pAdc, (lE=-lo@dC,lC=o)
Base Cutoff Current
Symbol
Unit
V(BR)CEO MBT3904DW1TI (NPN) MBT3906DW1T1 (PNP) V(BR)CBO MBT3904DW1TI (NPN) MBT3906DW1T1 (PNP) V(BR)EBO MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) MBT3904DW1T1 (NPN) MBT3906DWIT1 (PNP) MBT3904DW1TI (NPN) MBT3906DWIT1 (PNP)
*'X,l, $J,$<,. ,,.,'~ ,'$:. `!,., +ts.,
(VCE,= Vdc, Vdc) (VCE Vdc, -3.0 Vdc) Collector Cutoff Current (VCE Vdc, Vdc) (VCE Vdc, Vdc)
~"-':;*& "?/i*; ike.ii. .@,.+i:1 -5.0 ~ey$>$. ,,,,.~u ,1.* ,,t.,. $,.,, `,~i +.,, nAdc ,,,;pk$" **>' -::'. *.$, ~i{, .$:~.i:>}a.,. nAdc !CEX ,:'":ti ~`~'~"?t$<' ~*:$$N ,,Jt.-g\ `.:lii .$'~$ ,,$*:: ~,,.
Current Gain
mAdc, Vdc) mAdc, Vdc)
`f&$QgE MBT3904DWI (NPN) ~f'~':<$~s$ ,,+\', `:;*>,
VCE(sat) *::; .,.&, ='-10 mAdc, -1.0 rnAdc) mAdc, -5.0 mAdc) .,,$+$,,,, .:., Base-Emitter Saturation Voltagee,, ~:+,, mAdc, mAdc~''*~ "''" mAdc, rn,@~:JX# !.1'
`,.<:,.i
4.25 0.85 0.95 4.85 +.95
`:~!, lL.,,,,,\
~\\\\:,.',
MBT3906DW1T1
(PNP)
VBE(sat)
MBT3904DWIT1
(NPN)
0.65 4.65
mAdc, lB~Ml .O'wdc) mAdc, ~$$y~9Q mAdc) SMALL-SIG*%
,,,.,(
MBT3906DW1T1 (PNP)
characteristics
MBT3904DWIT1 (NPN) MBT3906DW1T1 (PNP) Qti& Capacitance `~CB Vdc, MHz) (VCB -5.0 Vdc, MHz) Input Capacitance (VEB Vdc, MHz) (VEB Vdc, MHz) Pulse Test Pulse Width< 300p;
Duty Cycle< 2.070.
Cobo MBT3904DW1TI (NPN)
MBT3906DW1T1 (PNP)
10.0
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
.,:.
Motorola Small-Signal
Transistors,
FETs Diodes Device Data
MBT3904DWITI
ELECTRICAL CHARACTERISTICS 25°C unless othewise noted) (Continued)
Characteristic
MBT3906DW1TI
MBT3946DWIT1
Symbol MBT3904DW1 (NPN) MBT3906DW1 (PNP) MBT3904DW1T1 MBT3906DWIT1 (NPN) (PNP) MBT3904DW1T1 MBT3906DW1T1 (NPN) (PNP) MBT3904DW1T1 MBT3906DW1T1 (NPN) (PNP) MBT3904DWITI MBT3906DW1T1 (NPN) (PNP) >/,s$" s\*.,., `i!.-~'~' `$~,;:fi' ,,*:,
Unit
Input Impedance (VCE Vdc, mAdc, kHz) (VCE Vdc, -1.0 mAdc, kHz) Voltage Feedback Ratio (VCE Vdc, mAdc, kHz) (VCE Vdc, -1.0 mAdc, kHz) Small-Signal Current Gain (VCE Vdc, mAdc, kHz) (VCE Vdc, -1.0 mAdc, kHz) Output Admittance (VCE Vdc, mAdc, kHz) (VCE Vdc, -1.0 mAdc, kHz) Noise Figure (VCE Vdc, @de, kHz) (VCE -5,0 Vdc, -100 pAdc, kHz)
1o-4
~:;:., ~?.$ !.~$ *.',.<<.t.t,! /,$r"J',,.> pmhos
,,,:&j%:;; ,,>.:/., ,\$,.s? .:.~. 1.w$:~$ ,,$. >'40 ,;~k$'"! \.+\~,+.<\,.?.'
SWITCHING CHARACTERISTICS
Delay Time (Vcc (Vcc Vdc, -0.5 Vdc) -3.0 Vdc, Vdc) MBT3904DW1T1 MBT3906DWIT1 (NPN] (P~$$,
\\Tt:!, .,,.:.$",,.}+ `.~v.
(NPN)
Rise Time
mAdc, mAdc) mAdc, -1.0 mAdc) (Vcc (Vcc Vdc, mAdc) -3.0 Vdc, mAdc)
MBT3904DWlT~jw+ MBT3906DwJ,T~A@) MBT390$~W+$~ MBT3%,WIT1 M~39~DWlTl (NPN) (PNP)
Storage
Fall
(IB1 mAdc) (IB1 162= -1,0 mAdc)
,,,,h;pDWITl `<'L
(PNP)
Motorola Small-Signal
Transistors,
FETs Diodes Device Data
`~MBT3904DWlTl
MBT3906DW111
MBT3946DWITI
MBT3904DW1T1 (NPN)
lo<tj <500@+ l~+109v DUTY CYCLE
DUW'CYCLE
.,'s. ~t>:\
Ts:r5000
3000 fin""
\,.;',,.
l~!B
MBT3904DW1T1
(NPN)
-0.1 Q.~:~&l.O 5.071010 203040
1111
5.07.0
Motorola Small-Signal
Transistors,
FETs Diodes Device Data
MBT3904DW1TI
MBT3904DWIT1
-1.0
"d"voi=o~
MBT3906DW1T1
MBT3946DW1TI
(NPN)
5001<<
111111
:3.0
5.07.010
70100
COLLECTOR CURRENT (mA)
Figure Turn-On
Time
l~lB=lo\
[~1B=20&
i~lB
1111
,f#b.?&iOo
5.07.010
`1.0
5n7nin
lc=100~A
MBT3904DW1TI (NPN) 1111
-0.1
FREQUENCY (kHz)
SOURCE RESISTANCE OHMS)
Figure Noise Figure
Figure Noise Figure Data
Motorola Small-Signal Transistors, FETs Diodes Device
MBT3904DW1T1
M"BT3906DW1T1
MBT3946DW1T1 MBT3904DWIT1 (NPN)
PARAMETERS (VCE Vdc, kHz, ='25°C)
COLLECTOR CURRENT (mA)
Figure Current Gain
MBT3904DW1TI
(NPN) 1111
COLLECTOR C@#E,@fi~)
COLLECTOR CURRENT (mA)
Figure Voltage Feedback Ratio
Motorola Small-Signal Transistors, FETs Diodes Device Data
MBT3904DWIT1 MBT3904DW1T1 (NPN)
MBT3906DW1T1
MBT3946DW1
TVPICAL STATIC CHARACTERISTICS
COLLECTOR CURRENT(mA) .:1, .,h$.*.,~j,>.,,. .Y,$"" ~$,!.,~,
Figure Current Gain
":p"v::. `~(::k~'
.>., .-,,,.
MBT3904DW1T1 (NPN)
+25°C t125°C
-55°C t25°C
55°C t25°C t25°C t125°C
-1.5
COLLECTOR CURRENT(mA)
COLLECTORCURRENT(mA)
Figure "ON" Voltages
Figure Temperature
Coefficients
Motorola
Small-Signal
Transistors,
FETs Diodes
Device
Data
MBT3904DW1T1
MBT3906DW1T1 MBT3946DWIT1 MBT3906DW1T1 (PNP)
Figure Delay Rise Time Equivalent Test Circuit
,$,,,::8,.<> \.~'::,:k, Figure Storage ~'~fime Equivalent C*~uit
CHARACTERISTIS
`"*'
I!ll
.$;?
1111
`1,01
1111
0.50,71.0
lull. ,,`.
3040
5.07,0
.2.0 3.fJ\ 5.$7:010
70'100
REVERSE Bf~''~t~')
Figure ~J~p~cltance
?,;b!:.]?S>r. ,-*.
COLLECTOR CURRENT (mA)
Figure Charge Data
MBT3906DWIT1
11111 (PNP) _vcc=40v
1111
~@v~20
70100
-1,0
5.07.010
5.07.0
70100
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure Turn-On Time
Figure Fall Time
Motorola Small-Signal Transistors, FETs Diodes Device Data
MBT3904DW1TI MBT3906DW1TI (PNP)
MBT3906DWIT1
MBT3946DW1T1
TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
(VCE -5.0 Vdc, 25"C, Bandwidth
f=l.OkHz
1111111/ Ic=l.om
111111
1111111
-0.1
FREQUENCY (kHz)
Figure
Figure
"0.1 lc~*~ECTOR CURRENT (mA) 1111
COLLECTOR CURRENT (mA)
Figure Output Admittance
`""0.1
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure Input Impedance
Transistors, FETs Diodes Device Data
Figure Voltage Feedback Ratio
Motorola
Small-Signal
MBT3904DWIT1
MBT3906DW1T1
MBT3946DW1T1 MBT3906DW1T1 (PNP)
TYPICAL
STATIC CHARACTERISTICS
-55°C t25°C MBT3906DWIT1 (PNP)
-55°C t25°C -8VBFORVBE(~at)
-2,0
COLLECTORCURRENT (mA)
COLLECTOR CURRENT (mA)
Hgure "ON" Voltages
Hgure Temperature Coefficients
Motorola
Small-Signal
Transistors,
FETs Diodes
Device
Data
MBT3904DW1TI
MBT3906DW1TI
MBT3946DW1T1
INFORMATION
USING SOT-363
FOOTPRINT
SURFACE MOUNT PACKAGE
MOUNTED APPLICATIONS
MINIMUM RECOMMENDED
SURFACE
Sutiace mount board layout critical portion total design. footprint semiconductor packages must correct size insure proper solder connection
interface between board package. With correct geometry, packages will self align when subjected solder reflow process.
size.
This vary from minimum size f&#$::,'"s'
soldering size given maximum power di~ipatin. Power dissipation surface mount device is,$~{rnined TJ(max), maximum rated junction tem~(~reof die, R8JA, thermal resistance from the,@,~.junction `\~\<" ambient, operating tempera&$~$-j~#. Using values provided data sheet for@~@7-363 package, calculated follows: <i,"k~ \.t,~\:\ ,,>;? `*?::.%
melting temperature solder higher than rated temperature device. When entire device heated high temperature, failure complete soldering within short time could result device failure. Therefore, following items should always observed order minimize thermal stress which devices subjected. Always preheat device.
,1.::
values ~he'$~.@tion found maximum ratings table ~,data sheet. Substituting these values into
"'.]>
equationJo~#tibient temperature 25°C, ,,,>i~$ calculate,~:,,~er dissipation device which this case isit~+~i watts. *,:,?*U. ,,*. ?i~,,,
delta temperature between preheat soldering should 10O°C less.* When preheating soldering, temperature leads case must exceed maximum temperature ratings shown data sheet. When using infrared heating with reflow soldering method, difference shall maximum 10°C. soldering temperature time shall exceed 260°C more than seconds. When shiting from preheating soldering, maximum temperature gradient shall less. After soldering been completed, device should allowed cool naturally least three minutes. Gradual cooling should used forced cooling will increase temperature gradient result latent failure mechanical stress. Mechanical stress shock should applied during cooling.
~j~ik,,h.
`"*S., .:.y,~i.
The833°CM SOT-363 package assumes recommended footprint glass epoxy printed circuit board achieve power dissipation milliwatts. There other alternatives achieving higher power dissipation from SOT-363 package. Another alternative would ceramic substrate aluminum core board such Thermal Clad'". Using board material such Thermal Clad, aluminum core board, power dissipation doubled using same footprint.
Soldering device without preheating cause excessive thermal sh;ck stress which result damage device.
Motorola Small-Signal Transistors, FETs Diodes Device Data
.:.'
MBT3g04DtilTl
MBT3906DWIT1
MBT3946DWIT1 PAC~GE DIMENSIONS
,,-".
DIMENSIONING Y14.5M, 1962, CO~ROLLING
~LERANCING OIMENSION INCH.
ANSI
appticati~s. Operatingparameters, includng Typicals" must vatidated each customer application customer's technical experts. Motorola does _dy;@ Iicenae under patent rights rights others. Motorola products designed, intended, authorized components sy_:*nded surgical implant into body, other apphcations intended support sustain life, other application which failure :~,lwrola product could create situation where personal injury death occur. Should Buyer purchase Motorola products such $~dedor unauthorized appticafion, Buyer shall indemnify hold Motorola officers, employees, subsidiaries, affiliates, diatributora hamless ~nat claims, costs, damages, and,expenses, reasonable attorney fees arising directly indirectly, claim parsonal injury death associated with such unintended unauthorized use, even such claim alleges that Motorola negligent regarding design manufacture part, Motorola registered trademarks Motorola, Inc. Motorola, Inc. Equal Oppotiunity/Affirmative Action Employer.
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,,',

Dual General Purpose Transistors MBT3904DW1TI, MBT3906DW1T1, MBT3

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