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64A0TsSEM8G17TWN 128Mx64 SDRAM DIMM Unbuffered, Refresh, 3.3V with
Top Searches for this datasheet128M SDRAM DIMM PC100/133 SYNCHRONOUS DRAM DIMM 64A0TsSEM8G17TWN 128Mx64 SDRAM DIMM Unbuffered, Refresh, 3.3V with Module 128Mx64 bit, chip, DIMM module consisting (16) 16Mx8x4 (TSOP) SDRAM 256x8 EEPROM serial presence detect. module conforms PC100/133 specifications, unbuffered, byte data masks. Pin# DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQMB0 DQMB1 A10/AP Assignment Pin# DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 CAS* DQMB4 DQMB5 RAS* Pin# DQMB2 DQMB3 DQ16 DQ17 DQ18 DQ19 DQ20 CKE1 DQ21 DQ22 DQ23 DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 Pin# CKE0 DQMB6 DQMB7 DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63 Features Fully PC100/133 Compliant JEDEC-Standard 168-pin Dual Inline Memory Module (DIMM) Unbuffered Based 64Mx8 SDRAM Components Power Supply: 3.3V 0.3V 64ms, 8192-cycle refresh Serial Presence Detect (SPD) LVTTL Compatible Inputs Outputs External Banks Four Internal Banks Pure Power Ground Planes Gold connector Active Valid Part Numbers Part Number 64A0TFSEM8G17TWN 64A0TESEM8G17TWN 64A0THSEM8G17TWN 64A0TGSEM8G17TWN Speed 100Mhz 100Mhz 133Mhz 133Mhz Latency 128Mx64 PC100/133 DIMM -DS781-64A0T 08/01/01 Technologies Reserves right change products specifications without notice ©2001 Technologies, Inc. 128M SDRAM DIMM Block Diagram SDRAM DIMM, BANKs with SDRAM DQMB0 DQMB4 DQ(0:7) DQ(32:39) DQMB1 DQMB5 DQ(8:15) DQ(40:47) DQMB2 DQMB6 DQ(16:23) DQ(48:55) DQMB3 DQMB7 DQ(24:31) DQ(56:63) SDRAMs SDRAMs SDRAMs SDRAMs SDRAMs SDRAMs *CLOCK WIRING CLOCK INPUT *CK0 *CK1 *CK2 *CK3 SDRAM SDRAMs SDRAMs SDRAMs SDRAMs wire Clock loading Table/Wiring diagrams. Bypass: 0.33uF 0.10uF capacitor SDRAM device. SERIAL LOAD NETS LOAD NETS SDRAM UNBUFFERED SDRAM DIMM CLOCK WIRING PC100/133 SDRAM LOAD NETS SDRAM NOTE: RESISTOR NETWORK VALUES OHMS. SDRAM LOAD NETS LOAD NETS SDRAM SDRAM ground SDRAM SDRAM SDRAM SDRAM SDRAM stub trace SDRAM SDRAM SDRAM termination signals connected SDRAMs 128Mx64 PC100/133 DIMM -DS781-64A0T 08/01/01 Technologies Reserves right change products specifications without notice ©2001 Technologies, Inc. 128M SDRAM DIMM Descriptions CLK# DQM0-DQM7 DQ0-DQ63 SDA, Name System Clock Chip Select Clock Enable Address Lines Bank Select Lines Address Strobe Column Address Strobe Write Enable Data Masks Data Lines Power Supply Ground Write Protect Data/Clock Lines Address Lines Connection Function input signals sampled rising edge clock. Enables disables command decoder. commands disabled when high. Masks system clock freeze current operation next clock cycle, also provides access standby mode (see truth table). Input lines Row/Column address. Selects internal bank accessed during column address latch. Latches address rising edge clock when asserted. Latches column address rising edge clock when asserted. Enables write operation precharge. Provides byte mask write operations byte enable read operations. Data input/output lines. Power Supply 3.3V±0.3V Ground Serial Presence Detect (SPD) EEPROM write protect. programming inhibited when asserted. Serial Presence Detect (SPD) EEPROM lines. These lines provide bi-directional data transfer over bus. Serial Presence Detect (SPD) EEPROM address lines. These lines used configure SPD. Line connected DIMM. 128Mx64 PC100/133 DIMM -DS781-64A0T 08/01/01 Technologies Reserves right change products specifications without notice ©2001 Technologies, Inc. 128M SDRAM DIMM Byte Function PC133 PC133 PC100 PC100 Description 36-61 64-125 128-255 Define bytes written into EEPROM Total bytes memory device Fundamental memory type (EDO,SDRAM.) addresses column addresses module rows Data width. .Data width continued Voltage interface SDRAM cycle time SDRAM access from clock DIMM configuration type (non-parity,ECC.) Refresh rate/type Primary SDRAM width Error checking SDRAM width Minimum clock delay back back random column address Burst lengths supported banks each SDRAM device CAS# latencies supported latency Write latency SDRAM module attributes SDRAM device attributes: general SDRAM cycle time SDRAM access from clock SDRAM cycle time SDRAM access from clock precharge time active active delay Minimum pulse width Density each module Command Address signal input setup time Command Address signal input hold time Data signal input setup time Data signal input hold time Superset information (may used future) data revision code Checksum bytes 0-62 Manufacturer's information Intel specification frequency Intel specification CAS# latency support Unused storage locations SDRAM LVTTL PC100, 7.5ns PC133 6.0ns PC100, 54ns PC133 non-parity Normal/Self page/8/4/2/1 (PC100 PC133) latency=0 latency=0 Unbuffered Write1/Read burst/Precharge 7.5ns PC133 CL2, 10ns PC133 CL3, PC100 CL2, 12ns PC100 5.4ns PC133 CL2, PC133 PC100 CL2, PC100 20ns PC100 PC133 CL3, 15ns PC133 20ns PC100, 15ns PC133 20ns (PC100 PC133 CL3), 15ns PC133 50ns PC100, 45ns PC133 512MB PC100, 1.5ns PC133 PC100, 0.8ns PC133 PC100, 1.5ns PC133 PC100, 0.8ns PC133 written PC100, PC133 Calculated Checksum written 100Mhz+ PC100 PC133, PC100 written NOTE: Variable Data. 128Mx64 PC100/133 DIMM -DS781-64A0T 08/01/01 Technologies Reserves right change products specifications without notice ©2001 Technologies, Inc. 128M SDRAM DIMM Simplified Truth Table Command Register Refresh Mode Register Auto refresh Entry Self Refresh Exit CKEn-1 CKEn RAS* CAS* Column addr (A0-A10) BA0,1 A10/ A12,A11 A9-A0 Code Address Column addr (A0-A10) Note Bank active address Auto pre-charge Read disable column Auto pre-charge address enable Auto pre-charge Write disable column Auto pre-charge address enable Burst stop Bank Selection Pre-charge Banks Entry Clock Suspend Mode active power down Exit Pre-charge power down mode Entry Exit operation command (V=Valid, X=Don't care, H=Logic High, L=Logic Low) Notes: issued only idle state. burst read write with auto pre-charge cannot interrupted. commands issued after burst 128Mx64 PC100/133 DIMM -DS781-64A0T 08/01/01 Technologies Reserves right change products specifications without notice ©2001 Technologies, Inc. 128M SDRAM DIMM Absolute Maximum Ratings Parameter Voltage relative Short circuit output current Power dissipation Operating temperature Storage temperature NOTE: Symbol Iout Topr Value -1.0 12.7 +125 Units Permanent damage occur absolute maximum ratings exceeded. Device should operated within recommended operating conditions only. Characteristics 70C, 3.3V 0.3V) Parameter Supply voltage Supply voltage Input high voltage Input voltage Output high voltage Output voltage Symbol Vcc+0.3 Units Note Ioh=-2mA Iol=2mA Current Consumption 70C, 3.3V 0.3V) Parameter Operating current (One bank active) Precharge standby current power down mode Symbol ICC1 ICC2P ICC2PS ICC2N Precharge standby current nonpower down mode ICC2NS Test Condition Burst length tRC(min) ,IO= CKE0 (max), CKE0,CKE1 (max), CKE0,CKE1 (min), min, S0*-S3*= (min) Input signals changed once during clock cycles CKE0,CKE1 (min), (max), Input signals stable CKE0 (min), min, S0*-S3*= (min) Input signals changed once during clock cycles CKE0 (min), (max), Input signals stable Page Burst, multiple banks active, tCCD 2CLK (min) CKE0 PC100 CL2/3 2208 115.2 115.2 PC133 2496 115.2 76.8 PC133 2496 115.2 76.8 345.6 345.6 345.6 Unit Note Active standby current non-power down mode Burst Operating Current Refresh Current Self Refresh Current Latency ICC3N ICC3NS ICC4 ICC5 ICC6 1152 2304 3552 1152 2976 3552 1152 2976 3552 Capacitance 70C, 3.3V 0.3V, Parameter Input capacitance (Am, BA0,CKEm) Input capacitance (DQMBm) Input capacitance (CAS*, RAS*, WE*) Input capacitance (CKm) Input capacitance (SDA,SCL,SAm) Input/Output capacitance (DQm,CBm) CI/O Symbol 13.6 Units Note 128Mx64 PC100/133 DIMM -DS781-64A0T 08/01/01 Technologies Reserves right change products specifications without notice ©2001 Technologies, Inc. 128M SDRAM DIMM Characteristics 70C, 3.3V 0.3V, Parameter Cycle time Cycle time Symbol tCMS tCKS tCMH tCKH tPDE tRRD (min) tRCD (min) (min) tRAS (min) tRSC (min) PC133 8000 1000 1000 PC133 1000 1000 8000 PC100 1000 1000 8000 PC100 1000 1000 8000 Units Note valid output delay valid output delay Output data hold time Output valid High-Z high pulse width pulse width Command setup time Address setup time Clock enable setup time Data input setup time Command hold time Address hold time Clock enable hold time Data input hold time Power down exit setup time active active delay RAS* CAS* delay precharge time active time cycle time Mode Register Active Delay Latency Notes Overshoot: (MAX) 2.0V Undershoot: (MIN) 2.0V Typical peak current consumption. Measured with outputs open. Assumes minimum column address update cycle: tCCD(min). Parameters depend programmed Latency. Assumed input rise fall time=1ns. time tPDE elapse after asserting resume normal operation when exiting power down mode. Timings listed discrete SDRAM components. 128Mx64 PC100/133 DIMM -DS781-64A0T 08/01/01 Technologies Reserves right change products specifications without notice ©2001 Technologies, Inc. 128M SDRAM DIMM Command Input Timing tCMS tCMS tCMS tCMS tCKS tCKH tCKS tCKS tCKH tCMH tCMS Read Timing Read Latency Read Command VALID DATA VALID DATA Burst Length 128Mx64 PC100/133 DIMM -DS781-64A0T 08/01/01 Technologies Reserves right change products specifications without notice ©2001 Technologies, Inc. 128M SDRAM DIMM Control Timing Input Data (Word Mask) tCMH VALI DATA tCMS tCMH tCMS VALI DATA VALI DATA VALI DATA (Clock Mask) tCKH VALI DATA tCKS tCKS VALI DATA VALI DATA VALI DATA Control Timing Output Data (Output Enable) tCMH (Clock Mask) tCKH VALID DATA VALID DATA tCMS tCMH tCMS VALID DATA VALID DATA VALID DATA tCKS tCKH tCKS VALID DATA 128Mx64 PC100/133 DIMM -DS781-64A0T 08/01/01 Technologies Reserves right change products specifications without notice ©2001 Technologies, Inc. 128M SDRAM DIMM Mode Register Cycle tRSC tCMS tCMH tCMS tCMH tCMS tCMH tCMS tCMH Next Command Register Data 128Mx64 PC100/133 DIMM -DS781-64A0T 08/01/01 Technologies Reserves right change products specifications without notice ©2001 Technologies, Inc. 128M SDRAM DIMM OUTLINE DRAWING SIDE VEIW 0.055" 0.055" FRONT VEIW 0.160" BACK VEIW Note: Drawing component location only, assembly have components installed. 128Mx64 PC100/133 DIMM -DS781-64A0T 08/01/01 Technologies Reserves right change products specifications without notice ©2001 Technologies, Inc. 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