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Silicon Schottky Barrier Detector Diodes

Both P­Type and N­Type Low Barrier Silicon Available Low 1 / f Noise Bonded Junctions for Reliability Planar Passivated Beam­Lead and Chip Construction See Also Zero Bias Silicon Schottky Barrier Detector Diodes

Silicon Schottky Barrier Detector Diodes
Features
Both P-Type and N-Type Low Barrier Silicon Available Low 1 / f Noise Bonded Junctions for Reliability Planar Passivated Beam-Lead and Chip Construction See Also Zero Bias Silicon Schottky Barrier Detector Diodes
Description
Alpha packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications through 40 GHz in Ka-band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance along with a narrow spread of capacitance values for close impedance control. P-type silicon is used to obtain superior 1 / f noise characteristics. N-type silicon is also available. The packaged diodes are suitable for use in waveguide, coaxial, and stripline applications. The beam-lead and chip diodes can also be mounted in a variety of packages or on special customer substrates. Unmounted beam-lead diodes are especially well suited for use in MIC applications. Mounted beam-lead diodes can be easily used in MIC, stripline or other such circuitry. The "Universal Chips" are designed for a high degree of device reliability in both commercial and industrial uses. The offset bond pad assures that no mechanical damage will occur at the junction during the wire bonding. Additionally the 4 mil bond pad eliminates performance variation due to bonding and is ideal for automated assembly, and improves efficiency during manual operations as well. The choice on "N" and "P" type silicon allows for the designer to optimize the silicon material for the intended application. Doppler mixers, high sensitivity detectors will benefit from using the low noise characteristics of the "P" type silicon. Low conversion loss mixers and biased detectors can be designed using standard "N" type material.
Alpha Industries · 617 935 5150 · Fax 617 824 4579 · E-mail sales@alphaind.com · Visit our web site: www.alphaind.com
Silicon Schottky Barrier Detector Diodes
Applications
Assembly and Handling Procedure
Die Attach Methods
All universal chips are compatible with both eutectic and conductive epoxy die attach methods. Eutectic composition preforms of Au / Sn or Au / Ge are useful when soldering devices in circuit. Gold / silicon eutectic die attach can be accomplished by scrubbing the chip directly to the gold plated bonding area. Epoxy die attach with silver or gold filled conductive epoxies, can also be used where thermal heat sinking is not a requirement.
The Schottky barrier diodes in this data sheet are of P-type construction and are optimized for low noise, particularly in the 1 / f region. They require a small forward bias (to overcome the barrier potential) if efficient operation is required, especially at power levels below -20 dBm. Bias not only increases sensitivity but also greatly reduces parameter variation due to temperature change. Video impedance is a direct function of bias and closely follows the 28 / l (mA) relationship. This is important to pulse fidelity, since the video impedance in conjunction with the detector output capacitance affects the effective amplifier bandwidth.
Wire Bonding
Two methods can be used to connect wire, ribbon, or wire mesh to the chips: Thermocompression Ballbonding Alpha recommends use of pure gold wire (0.7 - 1.25 mil diameter).
Alpha Industries · 617 935 5150 · Fax 617 824 4579 · E-mail sales@alphaind.com · Visit our web site: www.alphaind.com
Silicon Schottky Barrier Detector Diodes
Electrical Specifications at 25°C "P" Type Detectors
Beam-Lead
Electrical Characteristics Frequency Band X Ku K Part Number DDB2503-000 DDB2504-000 DDB2265-000 TSS - dBm1, 2 Min. 50 48 503 ZIF (Ohms) Min. 500 500 8003 Max. 700 700 12003 Gamma (l) CJ @ 0V (pF) Max. 0.15 0.10 0.10 200-350 200-350 300-450 2 2 3 10 16 24.15 491-006 491-006 491-006 VF @ 1 mA (mv) RT @ 10 mA (Ohms) VB @ 10 µA (V)
Test Conditions Frequency GHz
Outline Drawing Number
Ku K CDB7620-000 CDB7619-000 40 503 500 500 700 700 8000 5000 0.15 0.10 250-350 300-450 30 40 2 3 16 24.15 526-006 526-006
Packaged Diodes
Ku K X Ku K K CDB7620-207 CDB7619-207 DDB2503-250 DDB2504-250 DDB2265-250 DDB2265-220 40 50 50 48 503 503 500 500 500 500 8003 8003 700 700 700 700 12003 12003 8000 5000 0.15 0.10 0.15 0.10 0.10 0.10 300-350 300-450 200-350 200-350 300-450 300-450 40 40 30 40 2 3 2 2 3 3 16 24.15 10 16 24.15 24.15 207 207 250 250 250 220
"N" Type Detectors
Electrical Characteristics Frequency Band Part Number Drive Level VF @ 1 mA (mv) 240-300 270-350 350-450 375-500 450-575 CJ @ 0V (pF) Max. X K Ku K Ku CDF7623-000 CDF7621-000 CME7660-000 CDE7618-000 CDP7624-000 Low Low Med Med Med / High 0.30 0.10 0.15 0.10 0.15 10 20 10 20 15 2 2 3 3 3 RT @ 10 mA (Ohms) VB @ 10 uA (V)
Alpha Industries · 617 935 5150 · Fax 617 824 4579 · E-mail sales@alphaind.com · Visit our web site: www.alphaind.com
Silicon Schottky Barrier Dector Diodes
Spice Model Parameters
Part Number Parameter Unit
CDF7621-000 CDC7630-000 CDB7619-000
8E-08 6 1.04 1E-11 0.11 0.3 0.69 0.51 2 0.5 2.5 1E-05
3E-06 26 1.04 1E-11 0.1 0.25 0.69 0.34 2 0.5 2 0.001
3E-09 26 1.04 1E-11 0.11 0.32 0.69 0.54 2 0.5 3 1E-05
I F (Amps)
VF (Volts)
CDC7630-000
Typical I-V Characteristics
I F (Amps)
VF (Volts)
CDB7619-000
VF (Volts)
Shipping Information
CDF7621-000
Individual Chips
Standard packaging procedures at Alpha are for "wafflepack" delivery. Devices can also be packaged on "GelPack" carriers.
Wafer Shipment for Whole Wafer
Packaging options include delivery for devices on film frame where wafer is sawn on wafer gel pack for uncut, unsawn wafer.
Alpha Industries · 617 935 5150 · Fax 617 824 4579 · E-mail sales@alphaind.com · Visit our web site: www.alphaind.com
Silicon Schottky Barrier Detector Diodes
Typical Performance Data
a) Unbiased Input
RF Bypass
Video Output Load Resistor
1000.00 Voltage Output, mV
DC Return
Bias Supply a) Biased Input RF Bypass Video Output Load Resistor DC Return
Power Input, dBm Multi Octave-High Sensitivity
Figure 1a. Voltage Output vs. Power Input as a Function of Load Resistance
a) Unbiased 10000.00
Input
RF Bypass
Video Output Load Resistor
1000.00 Voltage Output, mV
Bias Supply a) Biased
Input
RF Bypass
Video Output Load Resistor
Power Input, dBm
Figure 1b. Voltage Output vs. Power Input as a Function of Load Resistance and Bias
Broadband-Low Sensitivity
Figure 2. Typical Video Detector Circuits
Frequency Table
Band UHF L S C X Ku K Ka mm Frequencies (GHz) Up to 1 1-2 2-4 4-8 8.2 - 12.4 12.4 - 18 18.0 - 26.5 26.5 - 40 40 - 100
Alpha Industries · 617 935 5150 · Fax 617 824 4579 · E-mail sales@alphaind.com · Visit our web site: www.alphaind.com
Silicon Schottky Barrier Detector Diodes
Outline Drawings
0.015 (0.38 mm) 0.013 (0.33 mm)
0.015 (0.38 mm) 0.013 (0.33 mm) Bonding Pad (526-006 Cathode) 526-011 Anode) Diameter 0.0035 - 0.004
0.0085 (0.216 mm) 0.0065 (0.165 mm)
Alpha Industries · 617 935 5150 · Fax 617 824 4579 · E-mail sales@alphaind.com · Visit our web site: www.alphaind.com