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File Number 9000.1 Single Event Radiation Hardened Quad Volt


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IS-139ASRH
File Number
9000.1
Single Event Radiation Hardened Quad Voltage Comparator
single event effects total dose radiation hardened IS-139ASRH consists four independent single dual supply voltage comparators single monolithic substrate. common mode input voltage range includes ground, even when operated from single supply, supply current makes these comparators suitable power applications. These types were designed directly interface with CMOS inputs.
Features
Electrically Screened 5962-01510 Qualified MIL-PRF-38535 Requirements Radiation Hardness Total Dose. 300krad(Si) (Max) Single Event Latch-up. >84MeV/mg/cm2 Single Event Upset >84MeV/mg/cm2 Operating Supply Voltage Range Input Offset Voltage (VIO). (Max) Quiescent Supply Current (Max) Differential Input Voltage Range Equal Supply Voltage 100V Output Voltage Withstand Capability
IS-139ASRH fabricated dielectrically isolated Hard Silicon Gate (RSG) process, which provides immunity single event latch-up capability highly reliable performance radiation environment. Specifications Hard devices controlled Defense Supply Center Columbus (DSCC). numbers listed below must used when ordering. Detailed Electrical Specifications IS-139ASRH contained 5962-01510. "hot-link" provided homepage with instructions downloading.
Applications
DC-DC Power Conversion Pulse Generators Timing Circuitry Level Shifting Analog Digital Conversion
Pinout
IS9-139ASRH (FLATPACK CDFP3-F20) VIEW
Ordering Information
ORDERING NUMBER 5962F0151001VXC INTERNAL MKT. NUMBER IS9-139ASRH-Q IS9-139ASRH-8 IS9-139ASRH/Proto TEMP. RANGE (oC)
OUTB OUTA -INA +INA -INB
OUTC OUTD +IND -IND +INC -INC +INB
5962F0151001QXC IS9-139ASRH/Proto
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. 1-888-INTERSIL 321-724-7143 Intersil Design trademark Intersil Americas Inc. Copyright Intersil Americas Inc. 2001 Star*Poweris trademark Intersil Americas Inc.
IS-139ASRH Characteristics
DIMENSIONS 3750µm 4510µm (148 mils mils) 483µm 25.4µm mils mil) INTERFACE MATERIALS Glassivation Type: Silox (SiO2) Thickness: Metallization Type: AlSiCu Thickness: Substrate Radiation Hardened Silicon Gate, Dielectric Isolation Backside Finish Silicon ASSEMBLY RELATED INFORMATION Substrate Potential Unbiased (DI) ADDITIONAL INFORMATION Worst Case Current Density <2.0 A/cm2 Transistor Count
Metallization Mask Layout
IS-139ASRH
OUTA
-INA +INA -INB
OUTB
OUTC +INB -INC +INC -IND +IND OUTD
Intersil products manufactured, assembled tested utilizing ISO9000 quality systems. Intersil Corporation's quality certifications viewed website
Intersil products sold description only. Intersil Corporation reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries.
information regarding Intersil Corporation products, site www.intersil.com
Sales Office Headquarters
NORTH AMERICA Intersil Corporation 883, Mail Stop 53-204 Melbourne, 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil Mercure Center 100, Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil Ltd. 8F-2, Sec. Chien-kuo North, Taipei, Taiwan Republic China TEL: 886-2-2515-8508 FAX: 886-2-2515-8369

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