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File Number 9000.1 Single Event Radiation Hardened Quad Volt
Top Searches for this datasheetIS-139ASRH File Number 9000.1 Single Event Radiation Hardened Quad Voltage Comparator single event effects total dose radiation hardened IS-139ASRH consists four independent single dual supply voltage comparators single monolithic substrate. common mode input voltage range includes ground, even when operated from single supply, supply current makes these comparators suitable power applications. These types were designed directly interface with CMOS inputs. Features Electrically Screened 5962-01510 Qualified MIL-PRF-38535 Requirements Radiation Hardness Total Dose. 300krad(Si) (Max) Single Event Latch-up. >84MeV/mg/cm2 Single Event Upset >84MeV/mg/cm2 Operating Supply Voltage Range Input Offset Voltage (VIO). (Max) Quiescent Supply Current (Max) Differential Input Voltage Range Equal Supply Voltage 100V Output Voltage Withstand Capability IS-139ASRH fabricated dielectrically isolated Hard Silicon Gate (RSG) process, which provides immunity single event latch-up capability highly reliable performance radiation environment. Specifications Hard devices controlled Defense Supply Center Columbus (DSCC). numbers listed below must used when ordering. Detailed Electrical Specifications IS-139ASRH contained 5962-01510. "hot-link" provided homepage with instructions downloading. Applications DC-DC Power Conversion Pulse Generators Timing Circuitry Level Shifting Analog Digital Conversion Pinout IS9-139ASRH (FLATPACK CDFP3-F20) VIEW Ordering Information ORDERING NUMBER 5962F0151001VXC INTERNAL MKT. NUMBER IS9-139ASRH-Q IS9-139ASRH-8 IS9-139ASRH/Proto TEMP. RANGE (oC) OUTB OUTA -INA +INA -INB OUTC OUTD +IND -IND +INC -INC +INB 5962F0151001QXC IS9-139ASRH/Proto CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. 1-888-INTERSIL 321-724-7143 Intersil Design trademark Intersil Americas Inc. Copyright Intersil Americas Inc. 2001 Star*Poweris trademark Intersil Americas Inc. IS-139ASRH Characteristics DIMENSIONS 3750µm 4510µm (148 mils mils) 483µm 25.4µm mils mil) INTERFACE MATERIALS Glassivation Type: Silox (SiO2) Thickness: Metallization Type: AlSiCu Thickness: Substrate Radiation Hardened Silicon Gate, Dielectric Isolation Backside Finish Silicon ASSEMBLY RELATED INFORMATION Substrate Potential Unbiased (DI) ADDITIONAL INFORMATION Worst Case Current Density <2.0 A/cm2 Transistor Count Metallization Mask Layout IS-139ASRH OUTA -INA +INA -INB OUTB OUTC +INB -INC +INC -IND +IND OUTD Intersil products manufactured, assembled tested utilizing ISO9000 quality systems. Intersil Corporation's quality certifications viewed website Intersil products sold description only. Intersil Corporation reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries. information regarding Intersil Corporation products, site www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation 883, Mail Stop 53-204 Melbourne, 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil Mercure Center 100, Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil Ltd. 8F-2, Sec. Chien-kuo North, Taipei, Taiwan Republic China TEL: 886-2-2515-8508 FAX: 886-2-2515-8369 Other recent searchesVUO64-16NO7 - VUO64-16NO7 VUO64-16NO7 Datasheet tfs82a - tfs82a tfs82a Datasheet PCN10 - PCN10 PCN10 Datasheet LT3593 - LT3593 LT3593 Datasheet DB101 - DB101 DB101 Datasheet DB107 - DB107 DB107 Datasheet AP86T03GH - AP86T03GH AP86T03GH Datasheet
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