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8-20 Output Active Frequency Multiplier Chip Size: 1600 1000 mils


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AMMC-6120
8-20 Output Active Frequency Multiplier
Chip Size: 1600 1000 mils) Chip Size Tolerance: mils) Chip Thickness: mils) Dimensions: (5x3 mils)
Description Avago's AMMC-6120 easy-to-use active frequency multiplier MMIC designed commercial communication systems. Though capable doubling with reduced fundamental suppression, MMIC designed take input double GHz. integrated output amplifier, matching harmonic suppression, bias networks. input/output matched fully blocked. MMIC fabricated using PHEMT technology. backside this both ground. This helps simplify assembly process reduces assembly related performance variations costs. improved reliability moisture protection, passivated active areas. This MMIC cost effective alternative bulky hybrid diode doublers that require high input drive power, have high C.L. poor fundamental suppression. AMMC-6120 Absolute Maximum Ratings[1] Symbol Parameters/Conditions Positive Drain Voltage Gate Supply Voltage Drain Current Input Power Operating Channel Temp. Tstg Storage Case Temp. Tmax Maximum Assembly Temp. sec. max.)
Features Input frequency range: 4-10 Broad input power range: Output power: (Pin dBm) Fundamental Suppression input output match Supply bias -1.2 Applications Microwave radio systems Satellite VSAT, Up/Down Link LMDS Pt-Pt Long Haul Broadband Wireless Access (including 802.16 802.20 WiMax) MMDS loops Commercial grade military
Units
Min. -3.0
Max. +150 +150 +300
Note: Operation excess these conditions result permanent damage this device.
Attention: Observe precautions handling electrostatic sensitive devices. Machine Model (Class Human Body Model (Class Refer Avago Application Note A004R: Electrostatic Discharge Damage Control.
AMMC-6120 Specifications/Physical Properties[1] Symbol Parameters Test Conditions Drain Supply Current (under power drive temperature) Gate Supply Operating Voltage Thermal Resistance[2] (Backside Temperature, 25°C) Units Min. Typ. Max.
qch-b
°C/W
-1.5
-1.2
-1.0
Notes: Ambient operational temperature 25°C unless otherwise noted. Channel-to-backside Thermal Resistance (qch-b) 26°C/W Tchannel (Tc) 34°C measured using infrared microscopy. Thermal Resistance backside temperature (Tb) 25°C calculated from measured data.
AMMC-6120 Specifications [3,4,5] 25°C, Id(Q) Symbol Parameters Test Conditions Fout P-1dB RLin RLout Input Frequency Output Frequency Output Power[4] Fundamental Isolation (referenced Harmonic Isolation (referenced Input Power Gain Compression Input Return Loss[6] Loss[6] Output Return Units DBc/Hz 10.5 Minimum Typical -135 Maximum Sigma
Single Sideband Phase Noise (100 offset)
Notes: Small/Large -signal data measured wafer form 25°C. 100% on-wafer test done dBm, output frequency GHz. Specifications derived from measurements 50-W test environment. Aspects multiplier performance improved over more narrow bandwidth application additional matching.
Typical Distribution Pout, 2nd-Harmonic 3rd-Harmonic Suppression (Fin GHz, dBm). Based 1800 parts sampled over several production lots.
Pout (dBm) 20-GHz
Fo-Suppression (dBc) 10-GHz
3Fo-Suppression(dBc) 30-GHz
AMMC-6120 Typical Performances 25°C, -1.2 Zout unless otherwise stated)
Note: These measurements test environment. Aspects amplifier performance improved over narrower bandwidth application additional conjugate, linearity noise (Gopt) matching.
INPUT OUTPUT
Pout (dBm)
FREQ. 2*FIN FUNDAMENTAL
(dB)
Pout (dBm)
OUTPUT FREQUENCY (GHz)
OUTPUT FREQUENCY (GHz)
FREQUENCY (GHz)
Figure Typical output power against fundamental, 3rd, harmonic suppression (Pin dBm) frequency.
Figure Typical output power different fundamental input power frequency.
Figure Typical input output return loss.
Pout (dBm) Pout (dBm)
FUNDAMENTAL
Pout (dBm)
FUNDAMENTAL
(dBm)
(dBm)
FUNDAMENTAL
(dBm)
Figure Typical output power against fundamental, 3rd, harmonic suppression GHz).
Figure Typical output power against fundamental, 3rd, harmonic suppression GHz).
Figure Typical output power against fundamental, 3rd, harmonic suppression GHz).
-40°C) +25°C) +85°C) -40°C) +25°C) +85°C)
(@Vd (@Vd (@Vd (@Vd (@Vd (@Vd
(@Vg -1.0 (@Vg -1.2 (@Vg -1.4 (@Vg -1.0 (@Vg -1.2 (@Vg -1.4
Pout (dBm)
Pout (dBm)
Pout (dBm)
(dBm)
OUTPUT FREQUENCY (GHz)
OUTPUT FREQUENCY (GHz)
Figure Typical output power fundamental suppression temperature.
Figure Typical output power fundamental suppresion
Figure Typical Pout fundamental suppression (Fout GHz).
Biasing Operation
should free residue that jeopardize electrical mechanical attachment.
DIFF. ACTIVE BALUN
location bond pads shown Figure Note that input output ports Ground-Signal-Ground configuration. connections should kept short reasonable minimize performance degradation undesirable series inductance. single bond wire normally sufficient signal connections, however double bonding with gold wire gold mesh[2] recommended best performance, especially near high frequency band. Thermosonic wedge bonding preferred method wire attachment bond pads. Gold mesh attached using round tracking tool tool force approximately grams ultrasonic power roughly duration guided wedge ultrasonic power level used wire. recommended wire bond stage temperature 2°C. Caution should taken exceed Absolute Maximum Rating assembly temperature time. chip thick should handled with care. This MMIC exposed bridges surface should handled edges with custom collet pick with vacuum center). This MMIC also static sensitive precautions should taken.
Notes: Ablebond 84-1 silver epoxy recommended. Buckbee-Mears Corporation, Paul, 800-262-3824
frequency doubler MMIC consists differential amplifier circuit that acts active balun. outputs this balun feed gates balanced FETs drains connected form single-ended output. This results fundamental frequency harmonics canceling even harmonic drain currents phase) adding superposition. Node acts virtual ground. input matching network (M/N) designed provide good match fundamental frequencies produces high impedance mismatch higher harmonics. AMMC-6120 biased with single positive drain supply single negative gate supply using separate bypass capacitors. normally biased with drain supply connected both VdAB bond pads gate supply connected bond pad. important bypass both VdAB with capacitors placed close possible. Typical bias connections shown Figure most application recommended -1.2 AMMC-6120 performance changes very slightly with Drain (Vd) Gate bias (Vg) shown Figure Minor improvements performance possible output power fundamental suppression optimizing from -1.0 -1.4 and/or from
input output port coupled thus voltage present either ports. However, output port internal output-matching circuit that presents short. Proper care should taken while biasing sequential circuit AMMC-6120 might cause short (use block sequential circuit coupled). ground wires needed since ground connections made with plated through-holes backside device. Refer Absolute Maximum Ratings table allowed thermal conditions. Assembly Techniques backside MMIC chip ground. microstrip applications chip should attached directly ground plane (e.g. circuit carrier heatsink) using electrically conductive epoxy[1]. best performance, topside MMIC should brought same height circuit surrounding This accomplished mounting gold plate metal shim (same length width MMIC) under chip which correct thickness make chip adjacent circuit same height. amount epoxy used chip and/or shim attachment should just enough provide thin fillet around bottom perimeter chip shim. ground plan
VdAB
RFin
RFout
Figure AMMC-6120 simplified schematic.
1000
VdAB
1310
1478
RFin
RFout
1600
Figure AMMC-6120 bonding locations.
/100
/100
VdAB
LINE
RFin RFout LINE
Figure AMMC-6120 assembly diagram.
Ordering Information: AMMC-6120-W10 devices tray AMMC-6120-W50 devices tray
product information complete list distributors, please website:
www.avagotech.com
Avago, Avago Technologies, logo trademarks Avago Technologies Limited United States other countries. Data subject change. Copyright 2006 Avago Technologies Limited. rights reserved. Obsoletes 5989-3759EN 5989-3944EN June 2006

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