REJ03G1322-0300 Rev.3.00 2006 on-resistance RDS(on) (VGS drive cu

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REJ03G1322-0300 Rev.3.00 2006 on-resistance RDS(on) (VGS drive cu

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RQK0202RGDQA
REJ03G1322-0300 Rev.3.00 2006
on-resistance RDS(on) (VGS drive current High speed switching gate drive
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)
Source Gate Drain
Note:
Marking "RG".
Absolute Maximum Ratings
25°C)
Item Symbol Drain source voltage VDSS Gate source voltage VGSS Drain current Note1 Drain peak current ID(pulse) Body drain diode reverse drain current Channel dissipation Note2 Channel temperature Storage temperature Tstg Notes: duty cycle When using glass epoxy board (FR-4: Ratings +150 Unit
Rev.3.00 2006 page
RQK0202RGDQA
Electrical Characteristics
25°C)
Item Drain source breakdown voltage Gate source breakdown voltage Gate source leak current Drain source leak current Gate source cutoff voltage Drain source state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn delay time Rise time Turn delay time Fall time Total gate charge Gate source charge Gate drain charge Body drain diode forward voltage Notes: Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) td(off) 0.85 Unit Test conditions ±100 VNote3 VNote3 VNote3 Note3
Rev.3.00 2006 page
RQK0202RGDQA
Main Characteristics
Maximum Channel Power Dissipation Curve
Operation this area limited RDS(on)
Maximum Safe Operation Area
Channel Dissipation
Drain Current
25°C Shot Pulse
0.01 0.01
Ambient Temperature (°C)
*When using glass epoxy board (FR-4:
Drain Source Voltage
Typical Output Characteristics
Typical Transfer Characteristics
Pulse Test
Drain Current
Pulse Test 25°C
Drain Current
75°C
25°C -25°C
Drain Source Voltage
Gate Source Voltage
Gate Source Cutoff Voltage
Pulse Test
Gate Source Cutoff Voltage VGS(off)
Typical Transfer Characteristics
Case Temperature
Pulse Test
Drain Current
75°C 0.01 25°C 0.001 -25°C
0.0001
Gate Source Voltage
Case Temperature (°C)
Rev.3.00 2006 page
RQK0202RGDQA
Drain Source Saturation Voltage VDS(on) (mV)
Drain Source Saturation Voltage Gate Source Voltage Static Drain Source State Resistance Drain Current
Drain Source State Resistance RDS(on)
Pulse Test 25°C
1000
Pulse Test 25°C
Gate Source Voltage Static Drain Source State Resistance Case Temperature
Drain Current Static Drain Source State Resistance Case Temperature
Drain Source State Resistance RDS(on)
Drain Source State Resistance RDS(on)
Pulse Test
Pulse Test
Case Temperature (°C)
Case Temperature (°C)
Zero Gate Voltage Drain current Case Temperature
10000 Pulse Test 1000
Forward Transfer Admittance |yfs|
Pulse Test -25°C
Zero Gate Voltage Drain current
IDSS (nA)
Forward Transfer Admittance Drain Current
25°C 75°C
0.01
Drain Current
Case Temperature (°C)
Rev.3.00 2006 page
RQK0202RGDQA
Dynamic Input Characteristics Switching Characteristics
Drain Source Voltage
Gate Source Voltage
1000
Switching Time (ns)
25°C td(off) td(on)
25°C
Gate Charge (nc)
Drain Current
Typical Capacitance Drain Source Voltage
1000
Input Capacitance Gate Source Voltage
Ciss, Coss, Crss (pF)
Ciss
Ciss (pF)
Coss Crss
Drain Source Voltage Reverse Drain Current Source Drain Voltage
Gate Source Voltage Body-Drain Diode Forward Voltage Case Temperature
Reverse Drain Current
Pulse Test 25°C
Body-Drain Diode Forward Voltage VSDF
Source Drain Voltage
Case Temperature (°C)
Rev.3.00 2006 page
RQK0202RGDQA
Package Dimensions
Package Name MPAK JEITA Package Code SC-59A RENESAS Code PLSP0003ZB-A Previous Code MPAK(T) MPAK(T)V MASS[Typ.] 0.011g
Reference Dimension Millimeters Symbol
Section
Pattern terminal position areas
0.35 1.35 0.35 0.15 0.25
0.25 0.42 0.13 0.11 0.95
0.15 1.65 0.75 0.55 0.65 0.05 0.55 1.05
1.95
Ordering Information
Part Name RQK0202RGDQATL-E Quantity 3000 pcs. Shipping Container reel, Emboss taping
Rev.3.00 2006 page
Sales Strategic Planning Div.
Keep safety first your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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REJ03G1322-0300 Rev.3.00 2006 on-resistance RDS(on) (VGS drive cu

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