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REJ03G1321-0300 Rev.3.00 2006 on-resistance RDS(on) (VGS drive cu
Top Searches for this datasheetRQK0201QGDQA REJ03G1321-0300 Rev.3.00 2006 on-resistance RDS(on) (VGS drive current High speed switching gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) Source Gate Drain Note: Marking "QG". Absolute Maximum Ratings 25°C) Item Symbol Drain source voltage VDSS Gate source voltage VGSS Drain current Note1 Drain peak current ID(pulse) Body drain diode reverse drain current Channel dissipation Note2 Channel temperature Storage temperature Tstg Notes: duty cycle When using glass epoxy board (FR-4: Ratings +150 Unit Rev.3.00 2006 page RQK0201QGDQA Electrical Characteristics 25°C) Item Drain source breakdown voltage Gate source breakdown voltage Gate source leak current Drain source leak current Gate source cutoff voltage Drain source state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn delay time Rise time Turn delay time Fall time Total gate charge Gate source charge Gate drain charge Body drain diode forward voltage Notes: Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) td(off) 0.85 Unit Test conditions ±100 2.4A, VNote3 2.4A, VNote3 2.4A, VNote3 5.50 Note3 Rev.3.00 2006 page RQK0201QGDQA Main Characteristics Maximum Channel Power Dissipation Curve Operation this area limited RDS(on) Maximum Safe Operation Area Channel Dissipation Drain Current 25°C Shot Pulse 0.01 0.01 Ambient Temperature (°C) *When using glass epoxy board (FR-4: Drain Source Voltage Typical Output Characteristics Pulse Test 25°C Typical Transfer Characteristics Pulse Test Drain Current Drain Current 75°C 25°C -25°C Drain Source Voltage Gate Source Voltage Gate Source Cutoff Voltage Typical Transfer Characteristics Pulse Test Case Temperature Gate Source Cutoff Voltage VGS(off) Pulse Test Drain Current 0.01 75°C 25°C 0.001 -25°C 0.0001 Gate Source Voltage Case Temperature (°C) Rev.3.00 2006 page RQK0201QGDQA Drain Source Saturation Voltage VDS(on) (mV) Drain Source Saturation Voltage Gate Source Voltage Static Drain Source State Resistance Drain Current Drain Source State Resistance RDS(on) Pulse Test 25°C 1000 Pulse Test 25°C Gate Source Voltage Static Drain Source State Resistance Case Temperature Drain Current Static Drain Source State Resistance Case Temperature Drain Source State Resistance RDS(on) Drain Source State Resistance RDS(on) Pulse Test Pulse Test Case Temperature (°C) Case Temperature (°C) Zero Gate Voltage Drain current Case Temperature 10000 Pulse Test Forward Transfer Admittance |yfs| Pulse Test -25°C Zero Gate Voltage Drain current IDSS (nA) Forward Transfer Admittance Drain Current 1000 25°C 75°C 0.01 0.01 Drain Current Case Temperature (°C) Rev.3.00 2006 page RQK0201QGDQA Dynamic Input Characteristics Drain Source Voltage Gate Source Voltage 1000 Switching Characteristics 25°C Switching Time (ns) td(off) td(on) 25°C Gate Charge (nc) Drain Current Typical Capacitance Drain Source Voltage 1000 Ciss Coss Crss Input Capacitance Gate Source Voltage Ciss, Coss, Crss (pF) Ciss (pF) Drain Source Voltage Reverse Drain Current Source Drain Voltage Gate Source Voltage Body-Drain Diode Forward Voltage Case Temperature Reverse Drain Current Pulse Test 25°C Body-Drain Diode Forward Voltage VSDF Source Drain Voltage Case Temperature (°C) Rev.3.00 2006 page RQK0201QGDQA Package Dimensions Package Name MPAK JEITA Package Code SC-59A RENESAS Code PLSP0003ZB-A Previous Code MPAK(T) MPAK(T)V MASS[Typ.] 0.011g Reference Dimension Millimeters Symbol Section Pattern terminal position areas 0.35 1.35 0.35 0.15 0.25 0.25 0.42 0.13 0.11 0.95 0.15 1.65 0.75 0.55 0.65 0.05 0.55 1.05 1.95 Ordering Information Part Name RQK0201QGDQATL-E Quantity 3000 pcs. Shipping Container reel, Emboss taping Rev.3.00 2006 page Sales Strategic Planning Div. Keep safety first your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Renesas Technology Corp. puts maximum effort into making semiconductor products better more reliable, there always possibility that trouble occur with them. Trouble with semiconductors lead personal injury, fire property damage. Remember give consideration safety when making your circuit designs, with appropriate measures such placement substitutive, auxiliary circuits, (ii) nonflammable material (iii) prevention against malfunction mishap. Notes regarding these materials These materials intended reference assist customers selection Renesas Technology Corp. product best suited customer's application; they convey license under intellectual property rights, other rights, belonging Renesas Technology Corp. third party. 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