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REJ03G1266-0300 Rev.3.00 2006 on-resistance RDS(on) (VGS -1.4 dri
Top Searches for this datasheetRQJ0601DGDQS REJ03G1266-0300 Rev.3.00 2006 on-resistance RDS(on) (VGS -1.4 drive current High speed switching gate drive Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK Gate Drain Source Drain Note: Marking "DG". *UPAK trademark Renesas Technology Corp. Absolute Maximum Ratings 25°C) Item Drain source voltage Gate source voltage Drain current Symbol VDSS VGSS Ratings -2.8 -4.2 -2.8 +150 Unit Drain peak current (pulse)Note1 Body drain diode reverse drain current Channel dissipation Note2 Channel dissipation (pulse)Note1 Channel temperature Storage temperature Tstg Notes: duty cycle When using glass epoxy board (FR-4: Rev.3.00 2006 page RQJ0601DGDQS Electrical Characteristics 25°C) Item Drain source breakdown voltage Gate source breakdown voltage Gate source breakdown voltage Gate source leak current Gate source leak current Drain source leak current Gate source cutoff voltage Drain source state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn delay time Rise time Turn delay time Fall time Total gate charge Gate source charge Gate drain charge Body drain diode forward voltage Notes: Pulse test Symbol V(BR)DSS V(BR)GSS V(BR)GSS IGSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) td(off) -1.0 -0.8 -2.0 Unit Test conditions +100 -100 -1.4 VNote3 -1.4 -4.5 VNote3 -1.4 VNote3 -2.8 -1.5 0Note3 Rev.3.00 2006 page RQJ0601DGDQS Main Characteristics Maximum Channel Power Dissipation Curve -100 Operation this area limited RDS(on) Maximum Safe Operation Area Channel Dissipation Drain Current -0.1 25°C Shot Pulse -0.01 -0.01 -0.1 -100 Ambient Temperature (°C) *When using glass epoxy board (FR-4: Drain Source Voltage Typical Output Characteristics -2.5 -2.5 Pulse Test 25°C Typical Transfer Characteristics Pulse Test -2.7 Drain Current Drain Current -2.0 -2.0 -1.5 -2.5 -1.0 -2.3 -1.5 -1.0 -0.5 -0.5 25°C 75°C -25°C -0.5 -1.5 -2.5 -3.5 Drain Source Voltage Gate Source Voltage Gate Source Cutoff Voltage -0.1 Pulse Test Gate Source Cutoff Voltage VGS(off) Typical Transfer Characteristics Case Temperature -2.5 Drain Current 75°C -0.01 -1.5 -100 Pulse Test 25°C -0.001 -25°C -0.0001 -0.5 -1.5 -2.5 -0.5 Gate Source Voltage Case Temperature (°C) Rev.3.00 2006 page RQJ0601DGDQS Drain Source Saturation Voltage Gate Source Voltage Static Drain Source State Resistance Drain Current Drain Source Saturation Voltage VDS(on) Drain Source State Resistance RDS(on) -0.8 Pulse Test 25°C Pulse Test 25°C -0.6 -4.5 -0.4 -0.2 -0.2 -1.5 -0.5 0.01 -0.1 Gate Source Voltage Drain Current Static Drain Source State Resistance Case Temperature Static Drain Source State Resistance Case Temperature Drain Source State Resistance RDS(on) Pulse Test -4.5 Drain Source State Resistance RDS(on) Pulse Test -1.5 -0.5 -0.2 -0.2 -0.5 -1.5 Case Temperature (°C) Case Temperature (°C) Zero Gate Voltage Drain current IDSS (nA) Forward Transfer Admittance Drain Current Zero Gate Voltage Drain current Case Temperature -1000 Pulse Test -100 Forward Transfer Admittance |yfs| -25°C 25°C 75°C -0.1 Pulse Test -1.0 -10.0 Drain Current Case Temperature (°C) Rev.3.00 2006 page RQJ0601DGDQS Dynamic Input Characteristics Drain Source Voltage Switching Characteristics Gate Source Voltage 1000 Switching Time (ns) td(off) td(on) 25°C -0.1 -2.8 25°C -100 -0.01 Gate Charge (nC) Drain Current Typical Capacitance Drain Source Voltage 1000 Ciss Input Capacitance Gate Source Voltage Ciss, Coss, Crss (pF) Ciss (pF) Coss Crss Drain Source Voltage Reverse Drain Current Source Drain Voltage -2.5 Gate Source Voltage Body-Drain Diode Forward Voltage Case Temperature -0.9 Body-Drain Diode Forward Voltage VSDF Reverse Drain Current -10V Pulse Test 25°C -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -1.5 -0.5 -0.4 -0.8 -1.2 -1.6 -2.0 Source Drain Voltage Case Temperature (°C) Rev.3.00 2006 page RQJ0601DGDQS Package Dimensions Package Name UPAK JEITA Package Code SC-62 RENESAS Code PLZZ0004CA-A Previous Code UPAK UPAKV MASS[Typ.] 0.050g Unit: Ordering Information Part Name RQJ0601DGDQSTL-E Quantity 1000 pcs. Shipping Container reel, Emboss taping Rev.3.00 2006 page 0.44 (0.4) 0.53 0.48 (2.5) 4.25 0.44 (1.5) (0.2) Sales Strategic Planning Div. Keep safety first your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Renesas Technology Corp. puts maximum effort into making semiconductor products better more reliable, there always possibility that trouble occur with them. Trouble with semiconductors lead personal injury, fire property damage. Remember give consideration safety when making your circuit designs, with appropriate measures such placement substitutive, auxiliary circuits, (ii) nonflammable material (iii) prevention against malfunction mishap. Notes regarding these materials These materials intended reference assist customers selection Renesas Technology Corp. product best suited customer's application; they convey license under intellectual property rights, other rights, belonging Renesas Technology Corp. third party. 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