REJ03G0389-0200 Rev.2.00 2006 on-resistance leakage current High

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

REJ03G0389-0200 Rev.2.00 2006 on-resistance leakage current High

Datasheet Thumbnail

Top Searches for this datasheet

H5N1506P
REJ03G0389-0200 Rev.2.00 2006
on-resistance leakage current High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
Gate Drain (Flange) Source
Absolute Maximum Ratings
25°C)
Item Drain Source voltage Gate Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel case thermal impedance Channel temperature Storage temperature Notes: duty cycle Value 25°C STch 25°C, 150°C Symbol VDSS VGSS (pulse) Note1 (pulse) Note3 EARNote3 Note2 ch-c Tstg
Note1
Ratings 0.833 +150
Unit °C/W
Rev.2.00 2006 page
H5N1506P
Electrical Characteristics
25°C)
Item Drain Source breakdown voltage Zero Gate voltage Drain current Gate Source leak current Gate Source cutoff voltage Forward transfer admittance Static Drain Source state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate charge Gate Source charge Gate Drain charge Body-Drain diode forward voltage Body-Drain diode reverse recovery time Body-Drain diode reverse recovery charge Notes: Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) td(off) 0.014 4900 1000 ±0.1 0.016 Unit Test conditions 47.5 Note4 47.5 VNote4 47.5 1.58 Note4 diF/dt A/µs
Rev.2.00 2006 page
H5N1506P
Main Characteristics
Power Temperature Derating
1000
Maximum Safe Operation Area
25°C
Channel Dissipation
Drain Current
(1shot) Operation 25°C) area limited
Operation this 0.03 RDS(on) 0.01
1000
Case Temperature (°C)
Drain Source Voltage
Typical Output Characteristics
Pulse Test
Typical Transfer Characteristics
Pulse Test
Drain Current
Drain Current
75°C
25°C -25°C
Drain Source Voltage Drain Source Saturation Voltage Gate Source Voltage
Drain Source State Resistance RDS(on) Drain Source Saturation Voltage VDS(on)
Pulse Test
Gate Source Voltage Static Drain Source State Resistance Drain Current 0.05 0.02 0.01 0.005 0.002 0.001
Pulse Test
47.5
1000
Gate Source Voltage
Drain Current
Rev.2.00 2006 page
H5N1506P
Static Drain Source State Resistance Temperature
Forward Transfer Admittance |yfs|
0.05 1000 25°C 75°C Pulse Test 1000 -25°C Pulse Test
Static Drain Source State Resistance RDS(on)
Forward Transfer Admittance Drain Current
0.04 47.5 0.03
0.02
0.01
Case Temperature (°C)
Drain Current Typical Capacitance Drain Source Voltage
100000 30000
Body-Drain Diode Reverse Recovery Time
Reverse Recovery Time (ns)
1000 1000 25°C
Capacitance (pF)
10000 3000 1000 Crss Coss Ciss
Reverse Drain Current
Drain Source Voltage
Dynamic Input Characteristics
Drain Source Voltage
Switching Characteristics
Gate Source Voltage
10000 duty td(off)
Switching Time (ns)
1000
td(on)
Gate Charge (nC)
Drain Current
Rev.2.00 2006 page
H5N1506P
Reverse Drain Current Source Drain Voltage
Gate Source Cutoff Voltage VGS(off)
Gate Source Cutoff Voltage Case Temperature
Reverse Drain Current
Pulse Test
Source Drain Voltage
Case Temperature
(°C)
Normalized Transient Thermal Impedance
Normalized Transient Thermal Impedance Pulse Width
25°C
0.05
c(t) 0.833°C/W, 25°C
0.03 0.02
0.01
Pulse Width
Switching Time Test Circuit
Waveform
Monitor D.U.T.
Vout Monitor Vout
td(off)
td(on)
Rev.2.00 2006 page
H5N1506P
Package Dimensions
Package Name TO-3P JEITA Package Code SC-65 RENESAS Code PRSS0004ZE-A Previous Code TO-3P TO-3PV MASS[Typ.] 5.0g
Unit:
15.6
14.9
19.9
18.0
5.45
5.45
Ordering Information
Part Name H5N1506P-E Quantity (Tube) Shipping Container
Note: some grades, production terminated. Please contact Renesas sales office check state production before ordering product.
Rev.2.00 2006 page
Sales Strategic Planning Div.
Keep safety first your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Renesas Technology Corp. puts maximum effort into making semiconductor products better more reliable, there always possibility that trouble occur with them. Trouble with semiconductors lead personal injury, fire property damage. Remember give consideration safety when making your circuit designs, with appropriate measures such placement substitutive, auxiliary circuits, (ii) nonflammable material (iii) prevention against malfunction mishap. Notes regarding these materials These materials intended reference assist customers selection Renesas Technology Corp. product best suited customer's application; they convey license under intellectual property rights, other rights, belonging Renesas Technology Corp. third party. Renesas Technology Corp. assumes responsibility damage, infringement third-party's rights, originating product data, diagrams, charts, programs, algorithms, circuit application examples contained these materials. information contained these materials, including product data, diagrams, charts, programs algorithms represents information products time publication these materials, subject change Renesas Technology Corp. without notice product improvements other reasons. therefore recommended that customers contact Renesas Technology Corp. authorized Renesas Technology Corp. product distributor latest product information before purchasing product listed herein. information described here contain technical inaccuracies typographical errors. Renesas Technology Corp. assumes responsibility damage, liability, other loss rising from these inaccuracies errors. Please also attention information published Renesas Technology Corp. various means, including Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). When using information contained these materials, including product data, diagrams, charts, programs, algorithms, please sure evaluate information total system before making final decision applicability information products. Renesas Technology Corp. assumes responsibility damage, liability other loss resulting from information contained herein. Renesas Technology Corp. semiconductors designed manufactured device system that used under circumstances which human life potentially stake. Please contact Renesas Technology Corp. authorized Renesas Technology Corp. product distributor when considering product contained herein specific purposes, such apparatus systems transportation, vehicular, medical, aerospace, nuclear, undersea repeater use. prior written approval Renesas Technology Corp. necessary reprint reproduce whole part these materials. these products technologies subject Japanese export control restrictions, they must exported under license from Japanese government cannot imported into country other than approved destination. diversion reexport contrary export control laws regulations Japan and/or country destination prohibited. Please contact Renesas Technology Corp. further details these materials products contained therein.
RENESAS SALES OFFICES
Refer latest detailed information. Renesas Technology America, Inc. Holger Way, Jose, 95134-1368, U.S.A Tel: (408) 382-7500, Fax: (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898 Renesas Technology Hong Kong Ltd. Floor, North Tower, World Finance Centre, Harbour City, Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> 2715-2888, Fax: <886> 2713-2999 Renesas Technology Singapore Pte. Ltd. Harbour Front Avenue, #06-10, Keppel Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 796-3115, Fax: <82> 796-2145
http://www.renesas.com
Renesas Technology Malaysia Sdn. Unit 906, Block Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510
2006. Renesas Technology Corp., rights reserved. Printed Japan.
Colophon .6.0

REJ03G0389-0200 Rev.2.00 2006 on-resistance leakage current High

Top Searches for this datasheet

Other recent searches