2.5V Drive RTF011P02 Structure Silicon P-channel External di

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2.5V Drive RTF011P02 Structure Silicon P-channel External di

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RTF011P02
2.5V Drive
RTF011P02
Structure Silicon P-channel External dimensions (Unit
TUMT3
0.85Max.
Features On-resistance. High speed switching.
0.77
0~0.1
0.65 0.65
0.17
Applications Switching
Gate Source Drain
Abbreviated symbol
Packaging specifications
Package Type RTF011P02 Code Basic ordering unit (pieces) Taping 3000
Inner circuit
PROTECTION DIODE BODY DIODE
Gate Source Drain
Absolute maximum ratings (Ta=25°C)
Parameter Drain-source voltage Gate-source voltage Drain current
Source current (Body diode)
Continuous Pulsed Continuous Pulsed
Total power dissipation Channel temperature Range storage temperature
Pw10µs, Duty cycle1% Mounted ceramic board
Symbol VDSS VGSS Tstg
Limits -0.4 +150
Unit
Thermal resistance
Parameter Channel ambient
Mounted ceramic board
Symbol Rth(ch-a)
Limits
Unit °C/W
0.15Max.
RTF011P02
Electrical characteristics (Ta=25°C)
Parameter Symbol Min. IGSS Gate-source leakage Drain-source breakdown voltage V(BR) IDSS Zero gate voltage drain current (th) -0.7 Gate threshold voltage Static drain-source on-state (on) resistance Forward transfer admittance Ciss Input capacitance Coss Output capacitance Reverse transfer capacitance Crss Turn-on delay time (on) Rise time Turn-off delay time (off) Fall time Total gate charge Gate-source charge Gate-drain charge
Pulsed
Typ.
Max.
-2.0
Unit
Conditions
VGS= ±12V, VDS=0V -1mA, VGS=0V VDS= -20V, VGS=0V VDS= -10V, -1mA -1A, VGS= -4.5V -1A, VGS= -0.5A, VGS= -2.5V VDS= -10V, -0.5A VDS= -10V VGS=0V f=1MHz -15V -0.5A VGS= -4.5V RL=30 RG=10 -15V VGS= -4.5V RL=15 RG=10
Body diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
Symbol
Min.
Typ.
Max.
-1.2
Unit
Conditions
-0.4A, VGS=0V
Appendix
Notes
technical content pages this document reproduced form transmitted means without prior permission ROHM CO.,LTD. contents described herein subject change without notice. specifications product described this document reference only. Upon actual use, therefore, please request that specifications separately delivered. Application circuit diagrams circuit constants contained herein shown examples standard operation. Please careful attention peripheral conditions when designing circuits deciding upon circuit constants set. data, including, limited application circuit diagrams information, described herein intended only illustrations such devices specifications such devices. ROHM CO.,LTD. disclaims warranty that such devices shall free from infringement third party's intellectual property rights other proprietary rights, further, assumes liability whatsoever nature event such infringement, arising from connected with related such devices. Upon sale such devices, other than buyer's right such devices itself, resell otherwise dispose same, express implied right license practice commercially exploit intellectual property rights other proprietary rights owned controlled ROHM CO., LTD. granted such buyer. Products listed this document antiradiation design.
products listed this document designed used with ordinary electronic equipment devices (such audio visual equipment, office-automation equipment, communications devices, electrical appliances electronic toys). Should intend these products with equipment devices which require extremely high level reliability malfunction with would directly endanger human life (such medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers other safety devices), please sure consult with sales representative advance. About Export Control Order Japan Products described herein objects controlled goods Annex (Item Export Trade Control Order Japan. case export from Japan, please confirm applies "objective" criteria "informed" MITI clause) basis "catch controls Non-Proliferation Weapons Mass Destruction.
Appendix1-Rev1.1

2.5V Drive RTF011P02 Structure Silicon P-channel External di

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