Drive RSS125N03 Structure Silicon N-channel External dimensi

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Drive RSS125N03 Structure Silicon N-channel External dimensi

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RSS125N03
Drive
RSS125N03
Structure Silicon N-channel External dimensions (Unit
SOP8
1.75
1pin mark
1.27
Each lead same dimensions
Application Power switching, converter.
Packaging specifications
Package Type RSS125N03 Code Basic ordering unit (pieces) Taping 2500
Equivalent circuit
0.4Min.
Features on-resistance. Built-in Protection Diode. Small Surface Mount Package (SOP8)
Source Source Source Gate Drain )Drain Drain Drain
Absolute maximum ratings (Ta=25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Storage temperature
Pw10µs, Duty cycle1% Mounted ceramic board.
Continuous Pulsed Continuous Pulsed
Symbol VDSS VGSS Tstg
Limits ±12.5
Unit
PROTECTION DIODE BODY DIODE
protection diode included between gate source terminals protect diode against static electricity when product use. protection circuit when fixed voltages exceeded.
Thermal resistance
Parameter Channel ambient
Mounted ceramic board.
Symbol (ch-a)
Limits 62.5
Unit
Rev.A
RSS125N03
Electrical characteristics (Ta=25°C)
Parameter Symbol Min.
Typ.
1670
Max.
12.1 13.1
IGSS Gate-source leakage Drain-source breakdown voltage V(BR) Zero gate voltage drain current IDSS Gate threshold voltage (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
Pulsed
Unit
Conditions
VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=12.5A, VGS=10V ID=12.5A, VGS=4.5V ID=12.5A, VGS=4V ID=12.5A, VDS=10V VDS=10V VGS=0V f=1MHz ID=6.25A, VGS=10V RL=2.40 RG=10 VGS=5V ID=12.5A
(on)
Ciss Coss Crss (on) (off)
Body diode characteristics (Source-Drain) (Ta=25°C)
Parameter Forward voltage
Pulsed
Symbol
Min.
Typ.
Max.
Unit
Conditions IS=6.4A, VGS=0V
Rev.A
RSS125N03
Electrical characteristic curves
10000
GATE-SOURCE VOLTAGE
SWITCHING TIME (ns)
Ta=25°C f=1MHz VGS=0V
1000
CAPACITANCE (pF)
Ta=25°C VDD=15V VGS=10V RG=10 Pulsed
Ta=25°C VDD=15V ID=12.5A RG=10 Pulsed
Ciss
1000
(off)
(on)
Coss Crss
0.01
DRAIN-SOURCE VOLTAGE
DRAIN CURRENT
TOTAL GATE CHARGE (nC)
Fig.1 Typical Capacitance Drain-Source Voltage
Fig.2 Switching Characteristics
Fig.3 Dynamic Input Characteristics
VDS=10V Pulsed
Ta=125°C Ta=75°C Ta=25°C -25°C
STATIC DRAIN-SOURCE ON-STATE RESISTANCE (on)
Ta=25°C Pulsed
VGS=0V Pulsed
DRAIN CURRENT
SOURCE CURRENT
Ta=125°C Ta=75°C Ta=25°C -25°C
ID=12.5A ID=6.25A
0.01
0.001
0.01
GATE-SOURCE VOLTAGE
GATE-SOURCE VOLTAGE
SOURCE-DRAIN VOLTAGE
Fig.4 Typical Transfer Characteristics
Fig.5 Static Drain-Source On-State Resistance Gate-Source Voltage
Fig.6 Source Current Source-Drain Voltage
STATIC DRAIN-SOURCE ON-STATE RESISTANCE (on)
STATIC DRAIN-SOURCE ON-STATE RESISTANCE (on)
VGS=10V Pulsed
VGS=4.5V Pulsed
STATIC DRAIN-SOURCE ON-STATE RESISTANCE (on)
1000
1000
1000
VGS=4V Pulsed
Ta=125°C Ta=75°C Ta=25°C -25°C
Ta=125°C Ta=75°C Ta=25°C -25°C
Ta=125°C Ta=75°C Ta=25°C -25°C
0.01
0.01
0.01
DRAIN CURRENT
DRAIN CURRENT
DRAIN CURRENT
Fig.7 Static Drain-Source On-State Resistance Drain Current
Fig.8 Static Drain-Source On-State Resistance Drain Current
Fig.9 Static Drain-Source On-State Resistance Drain Current
Rev.A
Appendix
Notes
technical content pages this document reproduced form transmitted means without prior permission ROHM CO.,LTD. contents described herein subject change without notice. specifications product described this document reference only. Upon actual use, therefore, please request that specifications separately delivered. Application circuit diagrams circuit constants contained herein shown examples standard operation. Please careful attention peripheral conditions when designing circuits deciding upon circuit constants set. data, including, limited application circuit diagrams information, described herein intended only illustrations such devices specifications such devices. ROHM CO.,LTD. disclaims warranty that such devices shall free from infringement third party's intellectual property rights other proprietary rights, further, assumes liability whatsoever nature event such infringement, arising from connected with related such devices. Upon sale such devices, other than buyer's right such devices itself, resell otherwise dispose same, express implied right license practice commercially exploit intellectual property rights other proprietary rights owned controlled ROHM CO., LTD. granted such buyer. Products listed this document antiradiation design.
products listed this document designed used with ordinary electronic equipment devices (such audio visual equipment, office-automation equipment, communications devices, electrical appliances electronic toys). Should intend these products with equipment devices which require extremely high level reliability malfunction with would directly endanger human life (such medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers other safety devices), please sure consult with sales representative advance. About Export Control Order Japan Products described herein objects controlled goods Annex (Item Export Trade Control Order Japan. case export from Japan, please confirm applies "objective" criteria "informed" MITI clause) basis "catch controls Non-Proliferation Weapons Mass Destruction.
Appendix1-Rev1.1

Drive RSS125N03 Structure Silicon N-channel External dimensi

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