Drive RSS085N05 Structure Silicon N-channel External dimensi

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Drive RSS085N05 Structure Silicon N-channel External dimensi

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RSS085N05
Drive
RSS085N05
Structure Silicon N-channel External dimensions (Unit
SOP8
1.75
Features Built-in Protection Diode. Small Surface Mount Package (SOP8).
1pin mark
1.27
Applications Power switching converter, Inverter
Each lead same dimensions
Packaging dimensions
Package Type RSS085N05 Code Basic ordering unit (pieces) Taping 2500
Absolute maximum ratings (Ta=25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol Limits VDSS VGSS ±8.5 Tstg +150 Unit
Equivalent circuit
0.4Min.
Total power dissipation Chanel temperature Range Storage temperature PW10µDuty cycle1% Mounted ceramic board
Protection Diode. Body Diode.
Source Source Source Gate Drain Drain Drain Drain
protection diode included between gate source terminals protect diode against static electricity when product use.Use protection circuit when fixed voltage exceeded.
Thermal resistance
Parameter Chanel ambient Mounted ceramic board Symbol Rth(ch-a) Limits 62.5 Unit
RSS085N05
Electrical characteristics (Ta=25°C)
Parameter Symbol
Gate-source leakage IGSS Drain-source breakdown voltage V(BR) Zero gate voltage drain current IDSS Gate threshold voltage (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
Pulsed
(on)
Ciss Coss Crss (on) (off)
Min.
Typ. 1500 15.3
Max. 21.4
Unit
Conditions VGS=20V, VDS=0V 1mA, VGS=0V VDS= 45V, VGS=0V VDS= 10V, 8.5A, VGS= 8.5A, VGS= 4.5V 8.5A, VGS= VDS= 10V, 8.5A VDS= VGS=0V f=1MHz 4.0A VGS= RL=6.3 RG=10 VGS= 8.5A RL=2.9 RG=10
Body diode characteristics (Source-Drain) (Ta=25°C)
Parameter Forward voltage
Pulsed
Symbol
Min.
Typ.
Max.
Unit
Conditions 8.5A, VGS=0V
RSS085N05
Electrical characteristic curves
VDS=10V pulsed Ta=125oC 75oC 25oC -25oC
1000
VGS=10V pulsed
1000
VGS=4.5V pulsed
Ta=125oC 75oC 25oC -25oC Ta=125oC 75oC 25oC -25oC
Static Drain-Source On-State Resistance RDS(on)
Static Drain-Source On-State Resistance RDS(on)
Drain Currnt
0.01
0.01
0.01
Drain Current
Gate-Source Voltage
Drain Current
Fig.1 Typical Transfer Characteristics
Fig.2 Static Drain-Source On-State Resistance Drain Current
Fig.3 Static Drain-Source On-State Resistance Drain Current
1000
VGS=4V pulsed
Static Drain-Source On-State Resistance RDS(on)
Ta=125oC 75oC 25oC -25oC
Ta=25oC pulsed
Ta=125oC 75oC 25oC -25oC
Static Drain-Source On-State Resistance RDS(on)
VGS=0V pulsed
ID=8.5A
Source Current
ID=4.75A
0.01
0.01
Drain Current
0.001
Gate-Source Voltage
Source-Drain Voltage
Fig.4 Static Drain-Source On-State Resistance Drain Current
Fig.5 Static Drain-Source On-State Resistance Gate-Source Voltage
10000
Fig.6 Source-Current Source-Drain Voltage
10000
Ta=25 f=1MHz VGS=0V
Gate-Source Voltage
Switching Time [ns]
Ciss
1000
Ta=25oC VDD=25V VGS=10V RG=10 Pulsed
Capacitance [pF]
1000
Coss
Ta=25 VDD=25V ID=8.5A RG=10 Pulsed
td(off) td(on)
Crss
0.01
Drain-Source Voltage
0.01 Drain Current
Total Gate Charge [nC]
Fig.7 Typical capacitance Source-Drain Voltage
Fig.8 Switching Characteristics
Fig.9 Dynamic Input Characteristics
RSS085N05
Measurement circuits
Pulse Width
D.U.T.
td(on) td(off) toff
Fig.10 Switching Time Test Circuit
Fig.11 Switching Time Waveforms
(Const.) D.U.T.
Charge
Fig.12 Gate Charge Test Circuit
Fig.13 Gate Charge Waveform
Appendix
Notes
technical content pages this document reproduced form transmitted means without prior permission ROHM CO.,LTD. contents described herein subject change without notice. specifications product described this document reference only. Upon actual use, therefore, please request that specifications separately delivered. Application circuit diagrams circuit constants contained herein shown examples standard operation. Please careful attention peripheral conditions when designing circuits deciding upon circuit constants set. data, including, limited application circuit diagrams information, described herein intended only illustrations such devices specifications such devices. ROHM CO.,LTD. disclaims warranty that such devices shall free from infringement third party's intellectual property rights other proprietary rights, further, assumes liability whatsoever nature event such infringement, arising from connected with related such devices. Upon sale such devices, other than buyer's right such devices itself, resell otherwise dispose same, express implied right license practice commercially exploit intellectual property rights other proprietary rights owned controlled ROHM CO., LTD. granted such buyer. Products listed this document antiradiation design.
products listed this document designed used with ordinary electronic equipment devices (such audio visual equipment, office-automation equipment, communications devices, electrical appliances electronic toys). Should intend these products with equipment devices which require extremely high level reliability malfunction with would directly endanger human life (such medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers other safety devices), please sure consult with sales representative advance. About Export Control Order Japan Products described herein objects controlled goods Annex (Item Export Trade Control Order Japan. case export from Japan, please confirm applies "objective" criteria "informed" MITI clause) basis "catch controls Non-Proliferation Weapons Mass Destruction.
Appendix1-Rev1.1

Drive RSS085N05 Structure Silicon N-channel External dimensi

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