Drive RSS070N05 Structure Silicon N-channel External dimensi

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Drive RSS070N05 Structure Silicon N-channel External dimensi

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RSS070N05
Drive
RSS070N05
Structure Silicon N-channel External dimensions (Unit
SOP8
1.75
Features Built-in Protection Diode. Small Surface Mount Package (SOP8).
1pin mark
1.27
Applications Power switching converter Inverter
Each lead same dimensions
Packaging dimensions
Package Type RSS070N05 Code Basic ordering unit (pieces) Taping 2500
Equivalent circuit
0.4Min.
Absolute maximum ratings (Ta=25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS Tstg
Total power dissipation Chanel temperature Range Storage temperature
PW10µ, Duty cycle1% Mounted ceramic board
Limits ±7.0 +150
Unit
Protection Diode. Body Diode.
Source Source Source Gate Drain Drain Drain Drain
protection diode included between gate source terminals protect diode against static electricity when product use.Use protection circuit when fixed voltage exceeded.
Thermal resistance
Parameter Chanel ambient
Mounted ceramic board
Symbol Rth(ch-a)
Limits 62.5
Unit
Rev.A
RSS070N05
Electrical characteristics (Ta=25°C)
Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) IDSS Zero gate voltage drain current (th) Gate threshold voltage
Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
Pulsed
(on)
Ciss Coss Crss (on) (off)
Min.
Typ.
1000 12.0
Max.
16.8
Unit
Conditions
VGS=20V, VDS=0V 1mA, VGS=0V VDS= 45V, VGS=0V VDS= 10V, ID=7A, VGS= VGS= 4.5V VGS= 4.0V VDS= 10V, VDS= VGS=0V f=1MHz 3.5A VGS= RL=7.1 RG=10 VGS= RL=3.6 RG=10
Body diode characteristics (Source-Drain) (Ta=25°C)
Parameter Forward voltage
pulsed
Symbol
Min.
Typ.
Max.
Unit
Condition IS=1.6A/VGS=0V
Rev.A
RSS070N05
Electrical characteristic curves
VDS=10V pulsed Ta=125oC 75oC 25oC -25oC
1000
Static Drain-Source On-State Resistance RDS(on)
1000
Static Drain-Source On-State Resistance RDS(on)
VGS=10V pulsed
Drain Current
Ta=125oC 75oC 25oC -25oC
VGS=4.5V pulsed
Ta=125oC 75oC 25oC -25oC
0.01
0.01
Gate-Source Voltage
0.01
Drain Current
Drain Current
Fig.1 Typical Transfer Characteristics
Fig.2 Static Drain-Source On-State Resistance Drain Current
Fig.3 Static Drain-Source On-State Resistance Drain Current
1000
Static Drain-Source On-State Resistance RDS(on)
Static Drain-Source On-State Resistance RDS(on)
VGS=4V pulsed
Source Current
Ta=125oC 75oC 25oC -25oC
Ta=25oC pulsed
VGS=0V pulsed Ta=125oC 75oC 25oC -25oC
ID=7.0A
ID=3.5A
0.01 Drain Current
Gate-Source Voltage
0.01
Source-Drain Voltage
Fig.4 Static Drain-Source On-State Resistance Drain Current
Fig.5 Static Drain-Source On-State Resistance Gate-Source Voltage
Fig.6 Source-Current Source-Drain Voltage
10000
10000 Ta=25oC f=1MHz VGS=0V Ciss Ta=25oC VDD=25V VGS=10V
Ta=25oC VDD=25V ID=7A RG=10 Pulsed
Switching Time [ns]
1000
1000
Coss Crss
td(off) td(on)
0.01 Drain-Source Voltage
0.01 Drain Current
Gate-Source Voltage VGS[V]
Capacitance [pF]
RG=10 Pulsed
Total Gate Charge [nC]
Fig.7 Typical capacitance Source-Drain Voltage
Fig.8 Switching Characteristics
Fig.9 Dynamic Input Characteristics
Rev.A
RSS070N05
Measurement circuits
Pulse Width
D.U.T.
td(on) td(off) toff
Fig.10 Switching Time Test Circuit
Fig.11 Switching Time Waveforms
(Const.) D.U.T.
Charge
Fig.12 Gate Charge Test Circuit
Fig.13 Gate Charge Waveform
Rev.A
Appendix
Notes
technical content pages this document reproduced form transmitted means without prior permission ROHM CO.,LTD. contents described herein subject change without notice. specifications product described this document reference only. Upon actual use, therefore, please request that specifications separately delivered. Application circuit diagrams circuit constants contained herein shown examples standard operation. Please careful attention peripheral conditions when designing circuits deciding upon circuit constants set. data, including, limited application circuit diagrams information, described herein intended only illustrations such devices specifications such devices. ROHM CO.,LTD. disclaims warranty that such devices shall free from infringement third party's intellectual property rights other proprietary rights, further, assumes liability whatsoever nature event such infringement, arising from connected with related such devices. Upon sale such devices, other than buyer's right such devices itself, resell otherwise dispose same, express implied right license practice commercially exploit intellectual property rights other proprietary rights owned controlled ROHM CO., LTD. granted such buyer. Products listed this document antiradiation design.
products listed this document designed used with ordinary electronic equipment devices (such audio visual equipment, office-automation equipment, communications devices, electrical appliances electronic toys). Should intend these products with equipment devices which require extremely high level reliability malfunction with would directly endanger human life (such medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers other safety devices), please sure consult with sales representative advance. About Export Control Order Japan Products described herein objects controlled goods Annex (Item Export Trade Control Order Japan. case export from Japan, please confirm applies "objective" criteria "informed" MITI clause) basis "catch controls Non-Proliferation Weapons Mass Destruction.
Appendix1-Rev1.1

Drive RSS070N05 Structure Silicon N-channel External dimensi

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