REJ03G0508-0200 Rev.2.00 Feb.10.2005 on-resistance leakage curren

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REJ03G0508-0200 Rev.2.00 Feb.10.2005 on-resistance leakage curren

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RJK2508DPK
REJ03G0508-0200 Rev.2.00 Feb.10.2005
on-resistance leakage current High speed switching
Outline
PRSS0004ZE-A (Previous code: TO-3P)
Gate Drain (Flange) Source
Absolute Maximum Ratings
25°C)
Item Drain Source voltage Gate Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel case thermal impedance Channel temperature Storage temperature Notes: duty cycle Value 25°C STch 25°C, 150°C Symbol VDSS VGSS (pulse)Note1 (pulse)Note1 IAPNote3 EARNote3 Note2 ch-c Tstg Ratings 18.0 0.833 +150 Unit °C/W
Rev.2.00 Feb.10.2005 page
RJK2508DPK
Electrical Characteristics
25°C)
Item Drain Source breakdown voltage Zero Gate voltage Drain current Gate Source leak current Gate Source cutoff voltage Forward transfer admittance Static Drain Source state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate charge Gate Source charge Gate Drain charge Body-Drain diode forward voltage Body-Drain diode reverse recovery time Body-Drain diode reverse recovery charge Notes: Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) td(off) 0.056 2600 ±0.1 0.064 Unit Test conditions Note4 VNote4 Note4 diF/dt A/µs
Rev.2.00 Feb.10.2005 page
RJK2508DPK
Main Characteristics
Power Temperature Derating
Maximum Safe Operation Area
1000
Channel Dissipation
Drain Current
Operation 25°C) (1shot) Operation
0.03 this area 0.01 limited RDS(on) 0.003 25°C 0.001
(°C)
1000
Case Temperature
Drain Source Voltage
Typical Output Characteristics Pulse Test Drain Source Voltage
Typical Transfer Characteristics Pulse Test
Drain Current
Drain Current
75°C
25°C -25°C
Gate Source Voltage
Drain Source Saturation Voltage Gate Source Voltage
Drain Source Saturation Voltage VDS(on) Drain Source State Resistance RDS(on)
Pulse Test
Static Drain Source State Resistance Drain Current
0.05
0.00 0.01 Pulse Test Drain Current 1000
Gate Source Voltage
Rev.2.00 Feb.10.2005 page
RJK2508DPK
Static Drain Source State Resistance Temperature Pulse Test 0.16 Forward Transfer Admittance Drain Current
Forward Transfer Admittance |yfs|
Static Drain Source State Resistance RDS(on)
-25°C 75°C 25°C
0.12 0.08 0.04 (°C) Case Temperature
Pulse Test
Drain Current
1000
Reverse Recovery Time (ns)
Body-Drain Diode Reverse Recovery Time
100000 30000
Typical Capacitance Drain Source Voltage
Capacitance (pF)
25°C 1000 Reverse Drain Current Dynamic Input Characteristics
10000 3000 1000
Ciss
Coss
Crss Drain Source Voltage Switching Characteristics duty
10000
Switching Time (ns)
Drain Source Voltage
Gate Source Voltage
1000
td(off) td(on) Drain Current
Gate Charge
(nC)
Rev.2.00 Feb.10.2005 page
RJK2508DPK
Reverse Drain Current Source Drain Voltage Pulse Test Gate Source Cutoff Voltage Case Temperature
Reverse Drain Current
Gate Source Cutoff Voltage VGS(off)
(°C)
Source Drain Voltage
Case Temperature
Normalized Transient Thermal Impedance Pulse Width
Normalized Transient Thermal Impedance
25°C
0.05
c(t) 0.833°C/W, 25°C
0.03
0.02
0.01
Pulse Width
Switching Time Test Circuit Monitor D.U.T. Vout Vout Monitor
Waveform
td(off)
td(on)
Rev.2.00 Feb.10.2005 page
RJK2508DPK
Package Dimensions
JEITA Package Code
SC-65
RENESAS Code
PRSS0004ZE-A
Previous Code TO-3P TO-3PV
MASS[Typ.] 5.0g
Unit:
15.6
14.9
19.9
18.0
5.45
5.45
Ordering Information
Part Name RJK2508DPK-E Quantity Plastic magazine Shipping Container
Note: some grades, production terminated. Please contact Renesas sales office check state production before ordering product.
Rev.2.00 Feb.10.2005 page
Sales Strategic Planning Div.
Keep safety first your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Renesas Technology Corp. puts maximum effort into making semiconductor products better more reliable, there always possibility that trouble occur with them. Trouble with semiconductors lead personal injury, fire property damage. Remember give consideration safety when making your circuit designs, with appropriate measures such placement substitutive, auxiliary circuits, (ii) nonflammable material (iii) prevention against malfunction mishap. Notes regarding these materials These materials intended reference assist customers selection Renesas Technology Corp. product best suited customer's application; they convey license under intellectual property rights, other rights, belonging Renesas Technology Corp. third party. Renesas Technology Corp. assumes responsibility damage, infringement third-party's rights, originating product data, diagrams, charts, programs, algorithms, circuit application examples contained these materials. information contained these materials, including product data, diagrams, charts, programs algorithms represents information products time publication these materials, subject change Renesas Technology Corp. without notice product improvements other reasons. therefore recommended that customers contact Renesas Technology Corp. authorized Renesas Technology Corp. product distributor latest product information before purchasing product listed herein. information described here contain technical inaccuracies typographical errors. Renesas Technology Corp. assumes responsibility damage, liability, other loss rising from these inaccuracies errors. Please also attention information published Renesas Technology Corp. various means, including Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). When using information contained these materials, including product data, diagrams, charts, programs, algorithms, please sure evaluate information total system before making final decision applicability information products. Renesas Technology Corp. assumes responsibility damage, liability other loss resulting from information contained herein. Renesas Technology Corp. semiconductors designed manufactured device system that used under circumstances which human life potentially stake. Please contact Renesas Technology Corp. authorized Renesas Technology Corp. product distributor when considering product contained herein specific purposes, such apparatus systems transportation, vehicular, medical, aerospace, nuclear, undersea repeater use. prior written approval Renesas Technology Corp. necessary reprint reproduce whole part these materials. these products technologies subject Japanese export control restrictions, they must exported under license from Japanese government cannot imported into country other than approved destination. diversion reexport contrary export control laws regulations Japan and/or country destination prohibited. Please contact Renesas Technology Corp. further details these materials products contained therein.
RENESAS SALES OFFICES
Refer latest detailed information. Renesas Technology America, Inc. Holger Way, Jose, 95134-1368, U.S.A Tel: (408) 382-7500, Fax: (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. Floor, North Tower, World Finance Centre, Harbour City, Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> 2715-2888, Fax: <886> 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. Harbour Front Avenue, #06-10, Keppel Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001
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2005. Renesas Technology Corp., rights reserved. Printed Japan.
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REJ03G0508-0200 Rev.2.00 Feb.10.2005 on-resistance leakage curren

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