This Common Cathode Epitaxial Planar Quad Diode designed ultra high sp

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This Common Cathode Epitaxial Planar Quad Diode designed ultra high sp

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NSDEMN11XV6T1, NSDEMN11XV6T5 Common Cathode Quad Array Switching Diode
This Common Cathode Epitaxial Planar Quad Diode designed ultra high speed switching applications. This device housed SOT-563 package which designed power surface mount applications, where board space premium.
Fast Available Inch Tape Reel These devices available Pb-free package(s). Specifications herein
apply both standard Pb-free devices. Please website www.onsemi.com specific Pb-free orderable part numbers, contact your local Semiconductor sales office representative.
MAXIMUM RATINGS 25°C)
Rating Reverse Voltage Peak Reverse Voltage Forward Current Peak Forward Current Peak Forward Surge Current Symbol IFSM (Note Value Unit mAdc mAdc
MARKING DIAGRAM
SOT-563 CASE 463A PLASTIC
Specific Device Code Date Code
THERMAL CHARACTERISTICS
Characteristic (One Junction Heated) Total Device Dissipation Derate above 25°C Thermal Resistance Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation Derate above 25°C Thermal Resistance Junction-to-Ambient Junction Storage Temperature FR-4 Minimum Tstg 25°C 25°C Symbol (Note (Note (Note (Note (Note (Note +150 Unit mW/°C °C/W
ORDERING INFORMATION
Device NSDEMN11XV6T1 NSDEMN11XV6T5 Package SOT-563 SOT-563 Shipping pitch 4000/Tape Reel pitch 8000/Tape Reel
Symbol
Unit mW/°C °C/W
Semiconductor Components Industries, LLC, 2006
March, 2006 Rev.
Publication Order Number: NSDEMN11XV6T1/D
NSDEMN11XV6T1, NSDEMN11XV6T5
ELECTRICAL CHARACTERISTICS 25°C)
Characteristic Reverse Voltage Leakage Current Forward Voltage Reverse Breakdown Voltage Diode Capacitance Reverse Recovery Time Test Circuit following page. Symbol (Note Condition Unit mAdc
NSDEMN11XV6T1, NSDEMN11XV6T5
TYPICAL ELECTRICAL CHARACTERISTICS
FORWARD CURRENT (mA) 85°C -40°C REVERSE CURRENT 150°C 125°C
85°C 55°C
25°C
0.01 25°C REVERSE VOLTAGE (VOLTS)
FORWARD VOLTAGE (VOLTS)
0.001
Figure Forward Voltage
DIODE CAPACITANCE (pF)
Figure Reverse Current
REVERSE VOLTAGE (VOLTS)
Figure Diode Capacitance
0.35
RECOVERY TIME EQUIVALENT TEST CIRCUIT
INPUT PULSE
OUTPUT PULSE
Figure Reverse Recovery Time Test Circuit NSDEMN11XV6T1
NSDEMN11XV6T1, NSDEMN11XV6T5 INFORMATION USING SOT-563 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT SURFACE MOUNTED APPLICATIONS Surface mount board layout critical portion total design. footprint semiconductor packages must correct size insure proper solder connection
0.0118 0.45 0.0177 1.35 0.0531 0.0394
interface between board package. With correct geometry, packages will self align when subjected solder reflow process.
0.0197 0.0197
SCALE 20:1 inches
SOT-563 SOT-563 POWER DISSIPATION power dissipation SOT-563 function size. This vary from minimum size soldering size given maximum power dissipation. Power dissipation surface mount device determined TJ(max), maximum rated junction temperature die, RJA, thermal resistance from device junction ambient, operating temperature, Using values provided data sheet SOT-563 package, calculated follows:
TJ(max) SOLDERING PRECAUTIONS
values equation found maximum ratings table data sheet. Substituting these values into equation ambient temperature 25°C, calculate power dissipation device which this case milliwatts.
150°C 25°C 833°C/W milliwatts
833°C/W SOT-563 package assumes recommended footprint glass epoxy printed circuit board achieve power dissipation milliwatts. There other alternatives achieving higher power dissipation from SOT-563 package. Another alternative would ceramic substrate aluminum core board such Thermal Clad®. Using board material such Thermal Clad, aluminum core board, power dissipation doubled using same footprint.
melting temperature solder higher than rated temperature device. When entire device heated high temperature, failure complete soldering within short time could result device failure. Therefore, following items should always observed order minimize thermal stress which devices subjected. Always preheat device. delta temperature between preheat soldering should 100°C less.* When preheating soldering, temperature leads case must exceed maximum temperature ratings shown data sheet. When using infrared heating with reflow soldering method, difference shall maximum 10°C. soldering temperature time shall exceed 260°C more than seconds. When shifting from preheating soldering, maximum temperature gradient shall less. After soldering been completed, device should allowed cool naturally least three minutes. Gradual cooling should used forced cooling will increase temperature gradient result latent failure mechanical stress. Mechanical stress shock should applied during cooling. Soldering device without preheating cause excessive thermal shock stress which result damage device.
NSDEMN11XV6T1, NSDEMN11XV6T5
PACKAGE DIMENSIONS SOT-563, LEAD CASE 463A-01 ISSUE
NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: MILLIMETERS MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS MINIMUM THICKNESS BASE MATERIAL. MILLIMETERS 1.50 1.70 1.10 1.30 0.50 0.60 0.17 0.27 0.50 0.08 0.18 0.10 0.30 1.50 1.70 INCHES 0.059 0.067 0.043 0.051 0.020 0.024 0.007 0.011 0.020 0.003 0.007 0.004 0.012 0.059 0.067
0.08 (0.003)
STYLE
EMITTER BASE COLLECTOR EMITTER BASE COLLECTOR
STYLE
EMITTER EMITTER2 BASE COLLECTOR BASE COLLECTOR
STYLE
CATHODE CATHODE ANODE/ANODE CATHODE CATHODE ANODE/ANODE
STYLE
COLLECTOR COLLECTOR BASE EMITTER COLLECTOR COLLECTOR
Thermal Clad trademark Bergquist Company.
Semiconductor registered trademarks Semiconductor Components Industries, (SCILLC). SCILLC reserves right make changes without further notice products herein. SCILLC makes warranty, representation guarantee regarding suitability products particular purpose, does SCILLC assume liability arising application product circuit, specifically disclaims liability, including without limitation special, consequential incidental damages. "Typical" parameters which provided SCILLC data sheets and/or specifications vary different applications actual performance vary over time. operating parameters, including "Typicals" must validated each customer application customer's technical experts. SCILLC does convey license under patent rights rights others. SCILLC products designed, intended, authorized components systems intended surgical implant into body, other applications intended support sustain life, other application which failure SCILLC product could create situation where personal injury death occur. Should Buyer purchase SCILLC products such unintended unauthorized application, Buyer shall indemnify hold SCILLC officers, employees, subsidiaries, affiliates, distributors harmless against claims, costs, damages, expenses, reasonable attorney fees arising directly indirectly, claim personal injury death associated with such unintended unauthorized use, even such claim alleges that SCILLC negligent regarding design manufacture part. SCILLC Equal Opportunity/Affirmative Action Employer. This literature subject applicable copyright laws resale manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: American Technical Support: 800-282-9855 Toll Free Literature Distribution Center Semiconductor USA/Canada P.O. 61312, Phoenix, Arizona 85082-1312 Phone: 480-829-7710 800-344-3860 Toll Free USA/Canada Japan: Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder additional information, please contact your local Sales Representative.
NSDEMN11XV6T1/D

This Common Cathode Epitaxial Planar Quad Diode designed ultra high sp

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