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Silicon General Purpose High Voltage Transistor This Silicon Plan


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MSB92WT1, MSB92AWT1
Silicon General Purpose High Voltage Transistor
This Silicon Planar Transistor designed general purpose amplifier applications. This device housed SC-70/SOT-323 package which designed power surface mount applications.
Features http://onsemi.com
COLLECTOR
Pb-Free Packages Available
MAXIMUM RATINGS 25°C)
Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Electrostatic Discharge Symbol V(BR)CBO V(BR)CEO V(BR)EBO Value -300 -300 -5.0 MBMu16,000, MMu2,000 Unit mAdc SC-70 (SOT-323) CASE STYLE BASE EMITTER
THERMAL CHARACTERISTICS
Rating Power Dissipation (Note Junction Temperature Storage Temperature Range Symbol Tstg +150 Unit
MARKING DIAGRAM
Device Code Date Code* Pb-Free Package (Note: Microdot either location) *Date Code orientation vary depending upon manufacturing location.
Maximum ratings those values beyond which device damage occur. Maximum ratings applied device individual stress limit values (not normal operating conditions) valid simultaneously. these limits exceeded, device functional operation implied, damage occur reliability affected. Device mounted FR-4 glass epoxy printed circuit board using minimum recommended footprint.
ORDERING INFORMATION
Device MSB92WT1 MSB92WT1G Package SC-70/ SOT-323 SC-70/ SOT-323 (Pb-Free) SC-70/ SOT-323 SC-70/ SOT-323 (Pb-Free) Shipping 3000/Tape Reel 3000/Tape Reel
MSB92AWT1 MSB92AWT1G
3000/Tape Reel 3000/Tape Reel
information tape reel specifications, including part orientation tape sizes, please refer Tape Reel Packaging Specifications Brochure, BRD8011/D.
Preferred devices recommended choices future best overall value.
Semiconductor Components Industries, LLC, 2006
January, 2006 Rev.
Publication Order Number: MSB92WT1/D
MSB92WT1, MSB92AWT1
ELECTRICAL CHARACTERISTICS
Characteristic Collector-Emitter Breakdown Voltage -1.0 mAdc, Collector-Base Breakdown Voltage -100 mAdc, Emitter-Base Breakdown Voltage -100 mAdc, Collector-Base Cutoff Current (VCB -200 Vdc, Emitter-Base Cutoff Current (VEB -3.0 Vdc, Current Gain (Note MSB92WT1: (VCE Vdc, -1.0 mAdc) MSB92AWT1: (VCE Vdc, -1.0 mAdc) (VCE Vdc, mAdc) (VCE Vdc, mAdc) Collector-Emitter Saturation Voltage (Note mAdc, -2.0 mAdc) Base-Emitter Saturation Voltage mAdc, -2.0 mAdc) SMALL SIGNAL CHARACTERISTICS Current -Gain Bandwidth Product mAdc, Vdc, MHz) Collector-Base Capacitance (VCB Vdc, MHz) Pulse Test: Pulse Width D.C. Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO -300 -300 -5.0 -0.25 -0.1 Unit hFE1 hFE1 hFE2 hFE3 VCE(sat) VBE(sat) -0.5 -0.9
http://onsemi.com
MSB92WT1, MSB92AWT1
CURRENT GAIN -55°C 25°C +125°C
COLLECTOR CURRENT (mA)
Figure Current Gain
1MHz CAPACITANCE (pF)
1MHz
REVERSE VOLTAGE (VOLTS)
1000
Figure Capacitance
VOLTAGE (VOLTS) COLLECTOR CURRENT (mA) VCE(sat) 25°C, IC/IB VCE(sat) 125°C, IC/IB VCE(sat) -55°C, IC/IB VBE(sat) 25°C, IC/IB VBE(sat) 125°C, IC/IB VBE(sat) -55°C, IC/IB VBE(on) 25°C, VBE(on) 125°C, VBE(on) -55°C,
Figure "ON" Voltages
http://onsemi.com
MSB92WT1, MSB92AWT1
PACKAGE DIMENSIONS
SC-70 (SOT-323) CASE 419-04 ISSUE
NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: INCH. MILLIMETERS 0.90 1.00 0.05 0.10 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 0.425 2.10 2.40 INCHES 0.035 0.002 0.028 0.014 0.007 0.083 0.049 0.051 0.026 0.017 0.083
0.80 0.00 0.30 0.10 1.80 1.15 1.20
0.032 0.000 0.012 0.004 0.071 0.045 0.047
0.040 0.004 0.016 0.010 0.087 0.053 0.055
2.00
0.079
0.095
0.05 (0.002)
STYLE BASE EMITTER COLLECTOR
SOLDERING FOOTPRINT*
0.65 0.025 0.65 0.025
0.075 0.035 0.028
SCALE 10:1
inches
*For additional information Pb-Free strategy soldering details, please download Semiconductor Soldering Mounting Techniques Reference Manual, SOLDERRM/D.
Semiconductor registered trademarks Semiconductor Components Industries, (SCILLC). SCILLC reserves right make changes without further notice products herein. SCILLC makes warranty, representation guarantee regarding suitability products particular purpose, does SCILLC assume liability arising application product circuit, specifically disclaims liability, including without limitation special, consequential incidental damages. "Typical" parameters which provided SCILLC data sheets and/or specifications vary different applications actual performance vary over time. operating parameters, including "Typicals" must validated each customer application customer's technical experts. SCILLC does convey license under patent rights rights others. SCILLC products designed, intended, authorized components systems intended surgical implant into body, other applications intended support sustain life, other application which failure SCILLC product could create situation where personal injury death occur. Should Buyer purchase SCILLC products such unintended unauthorized application, Buyer shall indemnify hold SCILLC officers, employees, subsidiaries, affiliates, distributors harmless against claims, costs, damages, expenses, reasonable attorney fees arising directly indirectly, claim personal injury death associated with such unintended unauthorized use, even such claim alleges that SCILLC negligent regarding design manufacture part. SCILLC Equal Opportunity/Affirmative Action Employer. This literature subject applicable copyright laws resale manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: American Technical Support: 800-282-9855 Toll Free Literature Distribution Center Semiconductor USA/Canada P.O. 61312, Phoenix, Arizona 85082-1312 Phone: 480-829-7710 800-344-3860 Toll Free USA/Canada Japan: Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder additional information, please contact your local Sales Representative.
http://onsemi.com
MSB92WT1/D

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