MICROWAVE TRANSISTORS 108-152MHz APPLICATIONS Features CLASS TRAN

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MICROWAVE TRANSISTORS 108-152MHz APPLICATIONS Features CLASS TRAN

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SD1015
MICROWAVE TRANSISTORS 108-152MHz APPLICATIONS Features
CLASS TRANSISTOR FREQUENCY POWER POWER GAIN 10dB GOLD METALLIZATION COMMON EMITTER
DESCRIPTION:
SD1015 gold metallized epitaxial silicon planar transistor designed 108-152MHz applications. This device utilizes diffused emitter resistors achieve infinite VSWR rated operating conditions.
ABSOLUTE MAXIMUM RATINGS (Tcase 25°C)
Symbol Parameter Value Unit
VCBO VCEO VCES VEBO PTOT
Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Storage Temperature Junction Temperature
36.0 18.0 36.0 10.0 +200
Thermal Data
RTH(j-c) Junction-Case Thermal Resistance
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct.
SD1015
ELECTRICAL SPECIFICATIONS (Tcase 25°C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Units
BVCES BVCEO BVEBO ICBO
10.0 30.0
65.0 35.0 35.0
DYNAMIC
Symbol Test Conditions Value Min. Typ. Max. Units
POUT POUT
13.5 13.5
12.5
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct.
SD1015
TEST CIRCUIT
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct.
SD1015
PACKAGE MECHANICAL DATA
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct.

MICROWAVE TRANSISTORS 108-152MHz APPLICATIONS Features CLASS TRAN

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