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2N5031

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
2N5031
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Features
· · · Silicon NPN, To-72 packaged VHF / UHF Transistor 1.2 GHz Current-Gain Bandwidth Product @ 5mA IC Maximum Unilateral Gain - 12 dB (typ) @ 400 MHz
1. Emitter 2. Base 3. Collector 4. Case
TO-72
DESCRIPTION:
The 2N5031 is a silicon NPN transistor, designed for general purpose small-signal, pre-driver, and driver, applications targeted for military and industrial equipment.
Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 10 15 3.0 20 Unit Vdc Vdc Vdc mA
Thermal Data
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
2N5031
STATIC (off)
DYNAMIC
FUNCTIONAL
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
2N5031
(MHz)
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
2N5031
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.