omponents 20736 Marilla Street Chatsworth BD434/BD436/BD438

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omponents 20736 Marilla Street Chatsworth BD434/BD436/BD438

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omponents 20736 Marilla Street Chatsworth
BD434/BD436/BD438
Features
Intended medium power near switching applications With TO-126 package complementary type BD433, BD435, BD437
Silicon Power Transistors
Maximum Ratings
Symbol VCEO Rating Collector-Emitter Voltage VCBO Collector-Base Voltage BD434 BD436 BD438 BD434 BD436 BD438 BD434 BD436 BD438 Rating -5.0 -4.0 1.25 +150 +150
Unit
VEBO
Emitter-Base Voltage
TSTG
Collector Current Collector power dissipation Junction Temperature Storage Temperature
Electrical Characteristics 25OC Unless Otherwise Specified
Symbol Parameter Collector-Emitter Breakdown Voltage (IC=-10mAdc, IB=0) BD434 BD436 BD438 Collector-Base Breakdown Voltage (IC=-1mAdc, IE=0) BD434 BD436 BD438 Emitter-Base Breakdown Voltage (IE=-1mAdc, IC=0) Collector-Base Cutoff Current (VCB=-22Vdc,IE=0) BD434 (VCB=-32Vdc,IE=0) BD436 (VCB=-45Vdc,IE=0) BD438 Collector-Base Cutoff Current (VCE=-22Vdc,IE=0) BD434 (VCE=-32Vdc,IE=0) BD436 BD438 (VCE=-45Vdc,IE=0) Emitter-Base Cutoff Current (VEB=-5.0Vdc, IC=0) Units
CHARACTERISTICS
V(BR)CEO -Vdc
V(BR)CBO
EMITTER COLLECTOR BASE
V(BR)EBO ICBO
-100
uAdc
ICEO
-100
uAdc
IEBO
-1.0
mAdc
Revision:
www.mccsemi.com
2005/01/27
BD434, BD436, BD438
CHARACTERISTICS
hFE-1 hFE-2 Current Gain (IC=-500mAdc, VCE=-1.0Vdc) Current Gain (IC=-10mAdc, VCE=-5.0Vdc) Current Gain (IC=-2Adc, VCE=-1.0Vdc) Collector-Emitter Saturation Voltage (IC=-2.0Adc, IB=-0.2Adc) Base-Emitter Voltage (VCE=-1.0Vdc,IC=-2.0Adc) Transition Frequency (IC=-250mAdc, VCE=-1.0Vdc) BD434/BD436 BD438 BD434/BD436 BD438 BD434/BD436 BD438 BD434/BD436 BD438 -0.5 -0.6 -1.1 -1.2
hFE-3
VCE(sat)
Revision:
www.mccsemi.com
2005/01/27

omponents 20736 Marilla Street Chatsworth BD434/BD436/BD438

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