DBA100 Diffused Junction Silicon Diode 10.0A Single-Phase Br

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DBA100 Diffused Junction Silicon Diode 10.0A Single-Phase Br

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Ordering number:EN651D
DBA100
Diffused Junction Silicon Diode
10.0A Single-Phase Bridge Rectifier
Features
Plastic molded structure. Glass passivation high reliability. Peak reverse voltage:VRM=200, 600V. Average rectified current:IO=10.0A.
Package Dimensions
unit:mm 1090
[DBA100]
Specifications
Absolute Maximum Ratings 25°C
Parameter Peak Reverse Voltage Average Recitified Current Surge Forward Current Junction Temperature Storage Temperature Symbol IFSM Tstg Conditions DBA100C DBA100G 10.0 +150 Unit
Ta=40°C Ta=40°C, with
Electrical Characteristics 25°C, constituent element bridge
Parameter Forward Voltage Reverse Current Symbol IF=5.0A VR:At each Conditions Ratings 1.05 Unit
Note:Mounting max.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/71096GI (KOTO)/N098TA, No.651-1/2
DBA100
products described contained herein intended surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment like, failure which directly indirectly cause injury, death property loss. Anyone purchasing products described contained herein above-mentioned shall: Accept full responsibility indemnify defend SANYO ELECTRIC CO., LTD., affiliates, subsidiaries distributors their officers employees, jointly severally, against claims litigation damages, cost expenses associated with such use: impose responsibilty fault negligence which cited such claim litigation SANYO ELECTRIC CO., LTD., affiliates, subsidiaries distributors their officers employees jointly severally. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. SANYO believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties. This catalog provides information May, 1998. Specifications information herein subject change without notice.
No.651-2/2

DBA100 Diffused Junction Silicon Diode 10.0A Single-Phase Br

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