15A, 80V, 0.140 Ohm, Logic Level, N-Channel Power MOSFET RFP15N08
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RFP15N08L
15A, 80V, 0.140 Ohm, Logic Level, N-Channel Power MOSFET
RFP15N08L N-Channel enhancement mode silicon gate power field effect transistor specifically designed with logic level volt) driving sources applications such programmable controllers, automotive switching, solenoid drivers. This performance accomplished through special gate oxide design which provides full rated conduction gate biases volt range, thereby facilitating true on-off power control from logic circuit supply voltages. Formerly developmental type TA09804.
Features
15A, rDS(ON) 0.140 Design Optimized Volt Gate Drive Driven Directly from Q-MOS, N-MOS, Circuits Power Dissipation Limited 175oC Rated Junction Temperature Logic Level Gate High Input Impedance Related Literature TB334 "Guidelines Soldering Surface Mount Components Boards"
Ordering Information
PART NUMBER RFP15N08L PACKAGE TO-220AB BRAND RFP15N08L
NOTE: When ordering, entire part number.
Symbol
Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE)
©2002 Fairchild Semiconductor Corporation
RFP15N08L Rev.
RFP15N08L
Absolute Maximum Ratings
25oC, Unless Otherwise Specified RFP15N08L Drain Source Breakdown Voltage (Note .VDS Drain Gate Voltage (Note VDGR Gate Source Voltage .VGS Continuous Drain Current Pulsed Drain Current (Note Maximum Power Dissipation Derated above 25oC. Operating Storage Temperature TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case 10s. Package Body 10s, Techbrief Tpkg 0.48 UNITS W/oC
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: 25oC 150oC.
Electrical Specifications
PARAMETER Drain Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current
25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS 1mA, VDS, 25oC, 65V, 125oC, 65V, 0-10V 0-5V 0-1V 64V, 15A, 4.27 ±100 1.05 0.140 2.083 UNITS
oC/W
Gate Source Leakage Current Drain Source Voltage
IGSS VDS(ON)
±10V, 7.5A, 15A,
Drain Source Resistance (Note Forward Transconductance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate Source Gate Drain) Gate Charge Threshold Gate Charge Thermal Resistance Junction Case
rDS(ON) V(plateau) td(ON) td(OFF) Qg(TOT) Qg(5) Qg(TH)
7.5A, 15V, 40V, 7.5A, 6.25,
Source Drain Diode Specifications
PARAMETER Source Drain Diode Voltage Diode Reverse Recovery Time NOTES: Pulsed: pulse duration 300µs maximum, duty cycle Repititive rating: pulse width limited maximum junction temperature.
©2002 Fairchild Semiconductor Corporation RFP15N08L Rev.
SYMBOL 7.5A
TEST CONDITIONS
UNITS
dISD/dt 100A/µs
RFP15N08L Typical Performance Curves
POWER DISSIPATION MULTIPLIER DRAIN CURRENT CONTINUOUS
Unless Otherwise Specified
25oC CURVES MUST DERATED LINEARLY WITH INCREASE TEMPERATURE
OPERATION THIS AREA LIMITED rDS(ON)
CASE TEMPERATURE (oC)
VDS, DRAIN SOURCE VOLTAGE
1000
FIGURE NORMALIZED POWER DISSIPATION CASE TEMPERATURE
FIGURE FORWARD BIAS SAFE OPERATING AREA
IDS, DRAIN SOURCE CURRENT IDS, DRAIN SOURCE CURRENT PULSE DURATION 80µs DUTY CYCLE 0.5% 25oC 4.5V 3.5V 2.5V VDS, DRAIN SOURCE VOLTAGE 7.5V
-40oC 125oC 25oC PULSE DURATION 80µs DUTY CYCLE 0.5%
125oC
-40oC
VGS, GATE SOURCE VOLTAGE
FIGURE SATURATION CHARACTERISTICS
FIGURE TRANSFER CHARACTERISTICS
NORMALIZED DRAIN SOURCE RESISTANCE PULSE DURATION 80µs DUTY CYCLE 0.5% RESISTANCE 125oC 25oC
10V, PULSE DURATION 80µs DUTY CYCLE 0.5%
rDS(ON), DRAIN SOURCE
-40oC
DRAIN SOURCE CURRENT
JUNCTION TEMPERATURE (oC)
FIGURE DRAIN SOURCE RESISTANCE DRAIN CURRENT
FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
©2002 Fairchild Semiconductor Corporation
RFP15N08L Rev.
RFP15N08L Typical Performance Curves
NORMALIZED GATE THRESHOLD VOLTAGE 250µA CAPACITANCE (pF) 1400 1200 1000 JUNCTION TEMPERATURE (oC) CRSS COSS CISS
Unless Otherwise Specified (Continued)
1600 1MHz CISS CRSS COSS
VDS, DRAIN SOURCE VOLTAGE
FIGURE NORMALIZED GATE THRESHOLD VOLTAGE JUNCTION TEMPERATURE
BVDSS DRAIN SOURCE VOLTAGE
FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE
GATE SOURCE VOLTAGE IG(REF) 0.5mA GATE SOURCE VOLTAGE BVDSS BVDSS
0.75BVDSS 0.50BVDSS 0.25BVDSS DRAIN SOURCE VOLTAGE
(REF) (ACT) TIME (µs) (REF) (ACT)
NOTE: Refer Fairchild Application Notes AN7254 AN7260. FIGURE NORMALIZED SWITCHING WAVEFORMS CONSTANT GATE CURRENT
Test Circuits Waveforms
td(ON)
tOFF td(OFF)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
©2002 Fairchild Semiconductor Corporation
RFP15N08L Rev.
RFP15N08L Test Circuits Waveforms
(Continued)
Qg(TOT)
Qg(5) Qg(TH) IG(REF)
IG(REF)
FIGURE GATE CHARGE TEST CIRCUIT
FIGURE GATE CHARGE WAVEFORMS
©2002 Fairchild Semiconductor Corporation
RFP15N08L Rev.
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
Quiet SeriesDISCLAIMER
FAST
QFETQSQT OptoelectronicsQuiet SeriesSILENT SWITCHER
SMART SuperSOTTM-6 SuperSOTTM-8
VCX
STAR*POWER used under license
FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: Life support devices systems devices critical component component life systems which, intended surgical implant into support device system whose failure perform body, support sustain life, whose reasonably expected cause failure life failure perform when properly used accordance support device system, affect safety with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.
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